General Description The MDF8N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF8N5 is suitable device for SMPS, high speed switching and general purpose applications. MDF8N5 N-Channel MOSFET 5V, 8 A,.27Ω Features V DS = 5V V DS = 55V @ Tjmax = 8A @V GS = V R DS(ON).27Ω @V GS = V Applications Power Supply PFC High Current, High Speed Switching D G D S G S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 5 V Drain-Source Voltage @ Tjmax V DSS @ T jmax 55 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current ( ) T C=25 o C 8 A T C= o C A Pulsed Drain Current () M 72 A Power Dissipation T C=25 o C 37 Derate above 25 o C Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 95 mj Junction and Storage Range T J, T stg -55~5 Id limited by maximum junction temperature P D.29 W W/ o C o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja 62.5 Thermal Resistance, Junction-to-Case () R θjc 3.4 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF8N5TH -55~5 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 25µA, V GS = V 5 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25µA 3. - 5. Drain Cut-Off Current SS V DS = 5V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, = 9.A.22.27 Ω Forward Transconductance g fs V DS = 4V, = 9.A - 3 - S Dynamic Characteristics Total Gate Charge Q g - 48 - Gate-Source Charge Q gs V DS = 4V, = 8.A, V GS = V (3) - 2 - Gate-Drain Charge - 5 - Q gd Input Capacitance C iss - 243 Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f =.MHz - Output Capacitance C oss - 32 Turn-On Delay Time t d(on) - 58 Rise Time t r V GS = V, V DS = 25V, = 8.A, - 74 Turn-Off Delay Time t d(off) R G = 25Ω (3) - Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge t f - 44 I S - 8 - A V SD I S = 8.A, V GS = V -.4 V I F = 8.A, dl/dt = A/µs (3) t rr - 375 ns - 4.2 µc Q rr nc V pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=5 C. 3. I SD 8.A, di/dt 2A/us, V DD<BVDSS, R g =25Ω, Starting T J=25 C 4. L=5.3mH, I AS=8.A, V DD=5V, R g =25Ω, Starting T J=25 C 2
,Drain Current [A]. V gs =5.5V =6.V =6.5V =7.V =8.V =.V.. V DS,Drain-Source Voltage [V] Notes. 25 μs Pulse Test 2. T C =25 Fig. On-Region Characteristics R DS(ON) [Ω ] 35 3 25 2 5 5 V GS =.V V GS =2V 2 3 4 5 6 7 8 9,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage.8.2 R DS(ON), (Normalized) Drain-Source On-Resistance.6.4.2..8. V GS = V 2. = 5 A V GS =V V GS =4.5V BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V 2. = 25 μa.6-5 -25 25 5 75 25 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 5 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. * Notes ;. V DS =3V. V GS = V 2. = 25 μa [A] 5 25 R Reverse Drain Current [A] 3 4 5 6 7 8 9 V GS [V] Fig.5 Transfer Characteristics..2.4.6.8..2 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 6 4 2 Note : I =.5A D 2 3 4 5 Q G, Total Gate Charge [nc] V 25V 4V Capacitance [pf] 6 5 4 3 2 C oss C iss C rss. V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. V GS = V 2. f = MHz Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics, Drain Current [A] 2 - -2 Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C =25 µs µs ms ms ms DC - 2 V DS, Drain-Source Voltage [V], Drain Current [A] 2 8 6 4 2 8 6 4 2 25 5 75 25 5 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case Z θ JC (t), Thermal Response - -2 D=.5.2..5.2. single pulse Duty Factor, D=t /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3.4 /W -5-4 -3-2 - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve Power (W) 2 9 6 3 single Pulse R thjc = 3.4 /W T C = 25 E-5 E-4 E-3.. Pulse Width (s) Fig.2 Single Pulse Maximum Power Dissipation 4
Physical Dimension 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A 4.5 4.93 b.63.9 b.5.47 C.33.63 D 5.47 6.3 E 9.6.7 e 2.54 F 2.34 2.84 G 6.48 6.9 L 2.24 3.72 L 2.79 3.67 Q 2.52 2.96 Q 3. 3.5 R 3. 3.55 5
Worldwide Sales Support Locations U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 9485 U.S.A Tel : -48-636-52 Fax : -48-23-245 E-Mail : usasales@magnachip.com U.K Knyvett House The Causeway, Staines Middx, TW8 3BA,U.K. Tel : +44 () 784-895- Fax : +44 () 784-895-5 E-Mail : uksales@magnachip.com China Hong Kong Office Suite 24, Ocean Centre 5 Canton Road, Tsim Sha Tsui Kowloon, Hong Kong Tel : 852-2828-97 Fax : 852-282-883 E-Mail : chinasales@magnachip.com Shenzhen Office Room 23B, 2/F International Chamber of Commerce Tower Fuhua Road3 CBD, Futian District, China Tel : 86-755-883-556 Fax : 86-755-883-5565 E-Mail : chinasales@magnachip.com Japan Osaka Office 3F, Shin-Osaka MT-2 Bldg 3-5-36 Miyahara Yodogawa-Ku Osaka, 532-3 Japan Tel : 8-6-6394-96 Fax : 8-6-6394-95 E-Mail : osakasales@magnachip.com Taiwan R.O.C 2F, No.6, Chowize Street, Nei Hu Taipei,4 Taiwan R.O.C Tel : 886-2-2657-7898 Fax : 886-2-2657-875 E-Mail : taiwansales@magnachip.com Shanghai Office Room E, 8/F, Liaoshen International Building 68 Wuzhong Road, (C) 23 Shanghai, China Tel : 86-2-645-52 Fax : 86-2-655-523 E-Mail : chinasales@magnachip.com Korea 89, Daechi-Dong, Kangnam-Gu Seoul, 35-738 Korea Tel : 82-2-693-345 Fax : 82-2-693-3668 ~9 Email : koreasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 6