InGaAs PIN photodiodes

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Long wavelength type (cutoff wavelength: 2.05 to 2.1 μm) Features Cutoff wavelength: 2.05 to 2.1 μm Low cost Photosensitive area: φ0.3 to φ3 mm Low noise High sensitivity High reliability High-speed response Applications Optical power meters Gas analyzers Moisture meters NIR (near infrared) photometry Options Amplifier for InGaAs PIN photodiode C4159-03 Heatsink for one-stage A3179 Heatsink for two-stage A3179-01 Temperature controller for C1103-04 Structure Type no. Dimensional outline Photosensitive area /Window material* 1 Package Cooling (mm) φ0.3 G12182-005K (1)/B TO-18 φ0.5 G12182-010K Non-cooled φ1 G12182-020K φ2 (2)/B TO-5 G12182-030K φ3 φ0.3 G12182-105K φ0.5 One-stage G12182-110K (3)/B TO-8 φ1 TE-cooled G12182-120K φ2 G12182-130K φ3 φ0.3 G12182-205K φ0.5 Two-stage G12182-210K (4)/B TO-8 φ1 TE-cooled G12182-220K φ2 G12182-230K φ3 *1: B=Borosilicate glass www.hamamatsu.com 1

Absolute maximum ratings Type no. Thermister power dissipation Pd_th TE-cooler allowable current ITE max TE-cooler allowable voltage VTE max Reverse voltage VR max Operating temperature Topr Storage temperature Tstg Soldering conditions (mw) (A) (V) (V) ( C) ( C) G12182-005K G12182-010K G12182-020K G12182-030K - - - -40 to +85* 2-55 to +125* 2 G12182-105K 260 C or less, G12182-110K 1.5 1.0 1 within 10 s G12182-120K G12182-130K 0.2-40 to +70* 2-55 to +85* 2 G12182-205K G12182-210K G12182-220K G12182-230K 1.0 1.2 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. The may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the. Electrical and optical characteristics (, unless otherwise noted) Type no. Measurement Condition Element temperature Tchip ( C) Thermistor resistance Rth Thermistor B constant B Spectral response range λ (μm) Peak sensitivity wavelength λp Photo sensitivity S λ=λp Dark current ID VR=0.5 V Min. Max. (kω) (K) (μm) (A/W) (A/W) (na) (na) 10 100 G12182-005K 20 200 G12182-010K 25 - - 0.9 to 2.1 100 1000 G12182-020K 500 5000 G12182-030K 1000 10000 1 10 G12182-105K 3 30 G12182-110K -10 0.9 to 2.07 1.95 1 1.2 10 100 G12182-120K 50 500 G12182-130K 100 1000 9.0 3.3 0.5 5 G12182-205K 1.5 15 G12182-210K -20 0.9 to 2.05 5 50 G12182-220K 25 250 G12182-230K 50 500 Temp. coefficient of ID VR=0.5 V (times/ C) 1.07 2

Measurement Cutoff frequency Terminal capacitance Shunt resistance Detectivity Noize equivalent power Condition fc Ct Rsh D VR=0 V VR=0 V NEP Element Type no. VR=10 mv λ=λp λ=λp temperature RL=50 Ω f=1 MHz Tchip ( C) Min. (MHz) (MHz) (pf) Max. (pf) Min. (MΩ) (MΩ) Min. (cm Hz 1/2 /W) (cm Hz 1/2 /W) (W/Hz 1/2 ) Max. (W/Hz 1/2 ) 40 90 25 50 0.65 3 6.5 10-14 2 10-13 G12182-005K 15 35 70 150 0.2 1 1.5 10-13 3.5 10-13 G12182-010K 25 5 10 230 500 0.05 0.25 1 10 11 3.5 10 11 2.5 10-13 6.5 10-13 G12182-020K 1.2 2.5 1000 2000 0.01 0.05 5.5 10-13 1.5 10-12 G12182-030K 1 1.5 2000 3000 0.004 0.02 8.5 10-13 2.5 10-12 40 140 22 50 10 50 1.5 10-14 4.5 10-14 G12182-105K 15 50 64 150 2.8 14 3 10-14 8 10-14 G12182-110K -10 5 16 200 500 0.6 3 5 10 11 1.5 10 12 5.5 10-14 1.5 10-13 G12182-120K 1.2 3.5 900 2000 0.13 0.65 1.5 10-13 4 10-13 G12182-130K 1 1.8 1800 3000 0.055 0.28 2 10-13 5.5 10-13 40 150 20 50 20 100 1 10-14 3 10-14 G12182-205K 15 53 60 150 5.5 28 2 10-14 5.5 10-14 G12182-210K -20 5 17 195 500 1.4 7 7 10 11 2 10 12 4 10-14 1 10-13 G12182-220K 1.2 3.7 850 2000 0.28 1.4 9 10-14 2.5 10-13 G12182-230K 1 1.9 1700 3000 0.11 0.55 1.5 10-13 4 10-13 Spectral response 1.4 1.2 Td=25 C Td=-10 C Td=-20 C ( VR=0 V) Spectral transmittance of window material 100 ( Ta=25 C) Photosensitivity (A/W) 1.0 0.8 0.6 0.4 Transmittance (%) 95 90 0.2 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 85 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 Wavelength (μm) Wavelength (μm) KIRDB0487EC KIRDB0638EA 3

Temperature coefficient of sensitivity (%/ C) Photosensitivity temperature characteristics ( VR=0 V) 2.5 2.0 1.5 1.0 0.5 0-0.5-1.0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Wavelength (μm) KIRDB0641EA Relative sensitivity (%) Linearity (G12182-010K) 102 100 98 96 94 92 90 88 86 84 82 80 ( Ta=25 C, λ=1.3 μm, RL=2 Ω, VR=0 V) 0 2 4 6 8 Incident light level (mw) 10 KIRDB0537EA Dark current vs. reverse voltage Non-cooled type 10 μa ( Ta=25 C) 1 μa G12182-130K (Td=-10 C) () 1 μa G12182-030K G12182-020K 100 na G12182-230K (Td=-20 C) Dark current 100 na G12182-010K G12182-005K Dark current 10 na G12182-120K (Td=-10 C) G12182-220K (Td=-20 C) G12182-110K (Td=-10 C) G12182-210K (Td=-20 C) G12182-105K (Td=-10 C) 10 na 1 na 0.01 0.1 1 10 1 na G12182-205K (Td=-20 C) (Td=-10 C) (Td=-20 C) 100 pa 0.01 0.1 1 10 Reverse voltage (V) Reverse voltage (V) KIRDB0488EA KIRDB0530EA 4

Terminal capacitance Terminal capacitance vs. reverse voltage ( Ta=25 C, f=1 MHz) 10 nf G12182-030K/-130K/-230K 1 nf G12182-020K/-120K/-220K 100 pf G12182-010K/-110K/-210K 10 pf G12182-005K/-105K/-205K /-103K/-203K 1 pf 0.001 0.01 0.1 1 10 Shunt resistance Shunt resistance vs. element temperature 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kω 10 kω 1 kω ( VR=10 mv) /-103K/-203K G12182-005K/-105K/-205K G12182-010K/-110K/-210K G12182-020K/-120K/-220K G12182-030K/-130K/-230K 100 Ω -40-20 0 20 40 60 80 100 Reverse voltage Element temperature ( C) KIRDB0489EB KIRDB0490EB The operating temperature for one-stage and two-stage s is up to 70 C. Thermistor temperature characteristics Cooling characteristics of TE-cooler 10 6 () 40 ( Ta=25 C, Thermal resistance of heatsink=3 C/W) 20 Resistance (Ω) 10 5 10 4 Element temperature ( C) 0-20 -40 Two-stage One-stage 10 3-40 -20 0 20-60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Element temperature ( C) Current (A) KIRDB0116EA KIRDB0231EA 5

Current vs. voltage (TE-cooler) 1.6 ( Ta=25 C, Thermal resistance of heatsink=3 C/W) 1.4 1.2 One-stage Current (A) 1.0 0.8 0.6 0.4 Two-stage 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) /-005K/-010K G12182-020K/-030K 5.4 ± 0.2 9.2 ± 0.2 4.7 ± 0.1 8.1 ± 0.1 0.1 max. Window 3.0 ± 0.1 2.6 ± 0.2 3.6 ± 0.2 0.15 max. Window 5.9 ± 0.1 2.5 ± 0.2 4.2 ± 0.2 Photosensitive surface 0.45 Lead 13 min. Photosensitive surface 0.45 Lead 0.4 max. 18 min. 2.54 ± 0.2 5.1 ± 0.3 1.5 max. Case Case Distance from photosensitive area center to cap center -0.2 X +0.2-0.2 Y +0.2 KIRDA0220EA Distance from photosensitive area center to cap center -0.2 X +0.2-0.2 Y +0.2 KIRDA0221EA 6

(3) /-105K/-110K/-120K/-130K (4) /-205K/-210K/-220K/-230K 15.3 ± 0.2 15.3 ± 0.2 0.2 max. 14 ± 0.2 Window 10 ± 0.2 6.4 ± 0.2 0.2 max. 14 ± 0.2 Window 10 ± 0.2 Photosensitive surface 0.45 Lead 10.2 ± 0.2 A 12 min. Photosensitive surface 0.45 Lead A 10 ± 0.2 12 min. 10.2 ± 0.2 A Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X +0.3-0.3 Y +0.3 /-105K/-110K 4.3 ± 0.2 G12182-120K /-130K 4.4 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X +0.3-0.3 Y +0.3 /-205K/-210K G12182-220K /-230K KIRDA0226EA A 6.6 ± 0.2 6.7 ± 0.2 KIRDA0227EA 7

Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Safety consideration Metal, ceramic, plastic package products Technical information Infrared detectors Information described in this material is current as of October 2017. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218, E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866, E-mail: hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)03-659-0080, Fax: (886)03-659-0081, E-mail: info@tw.hpk.co.jp Cat. No. KIRD1118E04 Oct. 2017 DN 8