TSHF62 Vishay Semiconductors High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero DESCRIPTION 94 8389 TSHF62 is an infrared, 89 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES Package type: leaded Package form: T-¾ Dimensions (in mm): 5 Peak wavelength: λ p = 89 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± Low forward voltage Suitable for high pulse current operation High modulation bandwidth: f c = 2 MHz Good spectral matching with Si photodetectors Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC Halogen-free according to IEC 6249-2-2 definition APPLICATIONS Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 45 khz or.3 MHz) Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT I e (mw/sr) ϕ (deg) λ P (nm) t r (ns) TSHF62 8 ± 89 3 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF62 Bulk MOQ: 4 pcs, 4 pcs/bulk T-¾ MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current I F ma Peak forward current t p /T =.5, t p = µs I FM 2 ma Surge forward current t p = µs I FSM.5 A Power dissipation P V 6 mw Junction temperature T j C Operating temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature t 5 s, 2 mm from case T sd 26 C Thermal resistance junction/ambient J-STD-5, leads 7 mm soldered on PCB R thja 23 K/W Document Number: 8734 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev..2, 25-Jun-9
TSHF62 Vishay Semiconductors High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero 8 2 P V - Power Dissipation (mw) 6 4 2 8 6 4 2 R thja = 23 K/W I F - Forward Current (ma) 8 6 4 2 R thja = 23 K/W 2 3 4 5 6 7 8 9 22 T amb - Ambient Temperature ( C) Fig. - Power Dissipation Limit vs. Ambient Temperature 2 3 4 5 6 7 8 9 222 T amb - Ambient Temperature ( C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I F = ma, t p = 2 ms V F.4.6 V Forward voltage I F = A, t p = µs V F 2.3 V Temperature coefficient of V F I F = ma TK VF -.8 mv/k Reverse current V R = 5 V I R µa Junction capacitance V R = V, f = MHz, E = C j 25 pf Radiant intensity I F = ma, t p = 2 ms I e 2 8 36 mw/sr I F = A, t p = µs I e 8 mw/sr Radiant power I F = ma, t p = 2 ms φ e 5 mw Temperature coefficient of φ e I F = ma TKφ e -.35 %/K Angle of half intensity ϕ ± deg Peak wavelength I F = ma λ p 89 nm Spectral bandwidth I F = ma Δλ 4 nm Temperature coefficient of λ p I F = ma TKλ p.25 nm/k Rise time I F = ma t r 3 ns Fall time I F = ma t f 3 ns Cut-off frequency I DC = 7 ma, I AC = 3 ma pp f c 2 MHz Virtual source diameter d 3.7 mm www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8734 2 Rev..2, 25-Jun-9
High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero TSHF62 Vishay Semiconductors BASIC CHARACTERISTICS I F - Forward Current (ma) t P /T =. T amb < 5 C.2.5..2.5 e - Radiant Power (mw).. 63 t P - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration. 697 I F - Forward Current (ma) Fig. 6 - Radiant Power vs. Forward Current.25 I F - Forward Current (ma) t P = µs t P /T =. Φ e rel - Relative Radiant Power..75.5.25 2 3 4 V 8873 F - Forward Voltage (V) 282 8 9 λ - Wavelength (nm) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 2 3 I e - Radiant Intensity (mw/sr) t P =. ms I e rel - Relative Radiant Intensity..9.8.7 4 5 6 7 8 ϕ - Angular Displacement 223 I F - Forward Current (ma) 5989.6.4.2 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 8734 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev..2, 25-Jun-9 3
TSHF62 Vishay Semiconductors High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters A C 5.8 ±.5 R 2.49 (sphere) 35.5 ±.55 8.7 ±.3 7.7 ±.5 (4.7).6 +.2 -. min. <.7 Area not plane 5 ±.5.5 +.5 -.5.5 +.5 -.5 technical drawings according to DIN specifications 2.54 nom. 6.544-5259.2-4 Issue: 8; 9.5.9 95 97 www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8734 4 Rev..2, 25-Jun-9
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