Piezoelectric Horn Driver with Boost Converter Features: 3V Operation Low Quiescent Current 10V Boost Converter Low Horn Driver On-Resistance Compatible with RE46C117 Applications: Smoke Detectors CO Detectors Personal Security Products Electronic Toys Description: The RE46C317/18 are CMOS piezoelectric horn driver ICs with built-in boost converter. They are intended for use in 3V battery or battery-backed applications. The circuits feature a boost converter and a driver circuit suitable for driving a piezoelectric horn. The RE46C317/18 are compatible with the RE46C117 device and offer lower standby current. The RE46C317 has three valid states of Horn Enable (tri-state, low and high), while the RE46C318 has only two valid states, low and high. Package Types RE46C317/18 PDIP, SOIC FEED 1 8 HRNEN V DD LX V SS 2 3 4 7 6 5 HORNS HORNB V O Typical Application RE46C317/18 R 1 1.5M C 4 R 2 200K RE46C317 Only High FEED HRNEN 1nF Tri-state V DD HORNS Low L 1 2V to 5V V 1 C 1 10 μh LX V SS HORNB V O RE46C318 Only High 10 μf C 3 10 μf Low D 1 Note 1: Schottky diode D 1 must have the maximum peak current rating of at least 1A. For best results, the forward voltage spec should be less than 0.5V at 1A. 2: Inductor L 3 must have the maximum peak current rating of at least 1A. For best results, the DC resistance should be less than 0.5. 2012-2013 Microchip Technology Inc. DS20002301B-page 1
R 2 R 3 RE46C317/18 Functional Block Diagram V O V DD HRNEN Tri-state Logic Level Shifter (RE46C317 Only) Horn Driver HORNB Standard Logic Level Shifter (RE46C318 Only) HORNS R 1 FEED + LX Voltage Reference - + Gate Control - V SS DS20002301B-page 2 2012-2013 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings V DD...5.5V V OUT...12.5V Input Voltage Range Except FEED, LX...V IN =V SS.3V to V DD +.3V FEED Input Voltage Range...V INFD =-10V to+22v LX Input Voltage...V INLX =V OUT +0.8V Input Current except FEED, LX... I IN =10mA LX Current (Peak)...I INLX =1.0A Operating Temperature...T A =-10 C to +60 C Storage Temperature...T STG =-55 C to +125 C Continuous Operating Current (HORNS, HORNB, V O )... I O =40mA Maximum Human Body Model ESD...1500V Notice: Stresses above those listed under Maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when handling this product. Damage can occur when exposed to extremely high static electrical charge. DC ELECTRICAL CHARACTERISTICS RE46C317 Unless otherwise indicated, all parameters apply at T A = -10 C to +60 C, V DD =3V, V SS =0V, C 3 =10µF. Typical values are at T A =+25 C Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Supply Voltage V DD 2 2 5 V Operating Standby Supply Current I DD1 2 0.5 1 µa HRNEN = Float; No loads Standby I VO I VO1 5 0 0.3 µa HRNEN = Float; No loads Quiescent Supply Current I DD2 2 27 49 µa HRNEN = Low; No Loads; V O =11V; V LX =0.5V Quiescent I VO I VO2 5 71 115 µa HRNEN = Low; No Loads; V O =11V; V LX =0.5V Supply current I SUP 2 300 µa HRNEN = Low; No Loads, Boost Running Input Current for Tri-state I IT 8-5 5 µa HRNEN = Float (Note 4) Input Voltage High V IHH 8 2.6 V HRNEN input V IHF 1 7 V FEED input; V O =10V Note 1: The boost converter in Boost mode (normal V O = 10V) can draw current pulses of ~0.8A and therefore is very sensitive to series resistance. The critical components of this resistance are the inductor DC resistance, the internal resistance of the battery and the resistance in the connections from the inductor to the battery, from the inductor to the LX pin. In order to function properly under full load at V DD = 2V, the total of the inductor and the interconnect resistances should not exceed 0.3. The internal battery resistance should be no more than 0.5. A low ESR capacitance of 10 µf or more should be connected in parallel with the battery to average current over the boost converter cycle. 2: In the above table, wherever a specific V O value is listed under test conditions, the V O is forced externally with the inductor disconnected, and the boost converter is not running. 3: The limits shown are 100% tested at +25 C only. Test limits are guard-banded, based on temperature characterization to ensure compliance at temperature extremes. 4: This is the maximum input current that will not cause a logic high or logic low to be asserted. 2012-2013 Microchip Technology Inc. DS20002301B-page 3
DC ELECTRICAL CHARACTERISTICS RE46C317 (CONTINUED) Unless otherwise indicated, all parameters apply at T A = -10 C to +60 C, V DD =3V, V SS =0V, C 3 =10µF. Typical values are at T A =+25 C Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Input Voltage Low V ILH 8 0.4 V HRNEN input V ILF 1 3 V FEED input; V O =10V Input Leakage I IHF 1 20 50 µa FEED = 22V; V O = 10V I ILF 1-50 -15 µa FEED = -10V; V O = 10V I IHH 8 20 50 µa HRNEN = V DD I ILH 8-50 -20 µa HRNEN = V SS Output Leakage I OZH 3 1 µa HRNEN = Float; V O = 12.5V; V LX =10V V O Output Voltage V VO 5 9 10 11 V V DD =3V, HRNEN = Low or High, I OUT =10mA V O Efficiency V OEFF 5 80 % I LOAD =10mA, V DD = 3V, HRNEN = 0V Output Low Voltage V OL 6, 7 0.3 0.5 V HORNB or HORNS I OUT =-16mA, V DD =3V Output High Voltage V OH 6, 7 9.5 9.7 V HORNB or HORNS V O =10V V DD = HRNEN = 3V I OUT =16mA Note 1: The boost converter in Boost mode (normal V O = 10V) can draw current pulses of ~0.8A and therefore is very sensitive to series resistance. The critical components of this resistance are the inductor DC resistance, the internal resistance of the battery and the resistance in the connections from the inductor to the battery, from the inductor to the LX pin. In order to function properly under full load at V DD = 2V, the total of the inductor and the interconnect resistances should not exceed 0.3. The internal battery resistance should be no more than 0.5. A low ESR capacitance of 10 µf or more should be connected in parallel with the battery to average current over the boost converter cycle. 2: In the above table, wherever a specific V O value is listed under test conditions, the V O is forced externally with the inductor disconnected, and the boost converter is not running. 3: The limits shown are 100% tested at +25 C only. Test limits are guard-banded, based on temperature characterization to ensure compliance at temperature extremes. 4: This is the maximum input current that will not cause a logic high or logic low to be asserted. DS20002301B-page 4 2012-2013 Microchip Technology Inc.
DC ELECTRICAL CHARACTERISTICS - RE46C318 Unless otherwise indicated, all parameters apply at T A = -10 C to +60 C, V DD =3V, V SS =0V, C 3 =10µF. Typical values are at T A =+25 C. Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Supply Voltage V DD 2 2 5 V Operating Standby Supply Current I DD1 2 0.1 µa HRNEN = Low; No loads Input Voltage High V IHH 8 2.3 V HRNEN input V IHF 1 7 V FEED input; V O =10V Input Voltage Low V ILH 8 1 V HRNEN input V ILF 1 3 V FEED input; V O =10V Input Leakage I IHF 1 20 50 µa FEED = 22V; V O =10V I ILF 1-50 -15 µa FEED = -10V; V O =10V I IN 8-100 100 na HRNEN = V DD or V SS Output Leakage I OZH 3 1 µa HRNEN = V SS, V O =12.5V, V LX =10V V O Output Voltage V VO 5 9 10 11 V V DD =3V, HRNEN = High, I OUT =10mA V O Efficiency V VOEFF 5 80 % I LOAD =10mA, V DD =3V, HRNEN = 0V Output Low Voltage V OL 6, 7 0.3 0.5 V HORNB or HORNS; I OUT =-16mA; V DD =3V Output High Voltage V OH 6, 7 9.5 9.7 V HORNB or HORNS; V O =10V; V DD = HRNEN = 3V; I OUT =16mA AC ELECTRICAL CHARACTERISTICS Unless otherwise indicated, all parameters apply at T A = -10 C to +60 C, V DD =3V, V SS =0V, C 3 =10µF. Typical values are at T A =+25 C. Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Horn Delay T HRN 8/6 or 8/7 1 ms HRNEN = High; Boost Running; 16 ma Load Note 1: Horn Delay is the delay between a high signal on HRNEN and the horn output turning ON. The internal circuitry delays the horn output until the Boost voltage reaches its set point, 10V nominally. TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, V DD =3V, V SS =0V Parameter Symbol Min. Typ. Max. Units Conditions Temperature Ranges Operating Temperature Range T A -10 60 C Storage Temperature Range T STG -55 125 C Thermal Package Resistances Thermal Resistance, 8L-PDIP JA 89.3 C/W Thermal Resistance, 8L-SOIC JA 149.5 C/W 2012-2013 Microchip Technology Inc. DS20002301B-page 5
NOTES: DS20002301B-page 6 2012-2013 Microchip Technology Inc.
2.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE RE46C317/18 Symbol PDIP, SOIC 1 FEED Horn Feedback 2 V DD Positive supply voltage 3 LX External inductor 4 V SS Negative supply voltage 5 V O Output of Boost converter 6 HORNB Horn Brass 7 HORNS Horn Silver 8 HRNEN Horn Enable Description 2.1 Horn Feedback Pin (FEED) This pin is usually connected to the feedback electrode of the piezoelectric horn through a current limiting resistor. If not used, this pin must be connected to V SS. 2.2 Positive Supply Pin (V DD ) This pin is connected to the positive supply voltage of the system. 2.3 External Inductor Pin (LX) This is the open drain NMOS output used to drive the boost converter inductor. The inductor should be connected from this pin to the positive supply voltage through a low resistance path. 2.4 Negative Supply Pin (V SS ) This pin is connected to the negative supply voltage of the system. 2.5 Boost Converter Output Pin (V O ) This is the output pin of the boost converter, typically 10V. 2.6 Horn Brass Pin (HORNB) This pin is connected to the metal electrode (B) of the piezoelectric transducer. 2.7 Horn Silver Pin (HORNS) This is the complementary output to HORNB. It connects to the ceramic electrode (S) of the piezoelectric transducer. 2.8 Horn Enable Pin (HRNEN) This is the logic input for horn enable. Tables 2-2 and 2-3 show the different HRNEN states and their description. TABLE 2-2: State Tri-state Low High TABLE 2-3: Low High State RE46C317 HORN ENABLE Description Standby mode; Boost converter is Disabled, Horn is Disabled Boost converter is Enabled, Horn is Disabled Boost converter is Enabled, Horn is Enabled RE46C318 HORN ENABLE Description Standby mode; Boost converter is Disabled, Horn is Disabled Boost converter is Enabled, Horn is Enabled 2012-2013 Microchip Technology Inc. DS20002301B-page 7
NOTES: DS20002301B-page 8 2012-2013 Microchip Technology Inc.
3.0 DEVICE DESCRIPTION RE46C317 and RE46C318 have three main blocks: Horn driver Boost regulator Horn Enable logic The following sections describe these blocks. 3.1 Horn Driver The horn driver is a push-pull circuit, capable of driving a three-terminal piezoelectric horn. It can also drive a modified two-terminal Piezo horn. 3.2 Horn Enable In RE46C317, the HRNEN is a tri-state signal with three valid states: low, high and tri-state (or midsupply). The three levels of HRNEN determine the modes of operation. When HRNEN is in tri-state, the device is in Standby mode and all circuits are disabled. This is the lowest current operating mode. When HRNEN is low, the device is in Boost-Only mode. In this mode, only the boost regulator is enabled and the output voltage is boosted to 10V nominally. The horn driver circuit is disabled in this mode. This mode can be used to check for a low battery condition. When HRNEN is high, the part is in Normal Operation. The boost regulator and the horn driver circuits are enabled in this mode. The RE46C318 uses a binary logic circuit, rather than tri-state logic, to determine the mode of operation. When HRNEN is low, the boost and horn driver circuits are disabled and the device is in Standby. This is the lowest current operating mode. When HRNEN is high, the boost and horn driver circuits are enabled. 3.3 Boost Regulator The boost regulator in the RE46C317/18 is a current-mode controller with two control loops, that work together in maintaining a constant output voltage and supply the required load current. The inner current control loop provides cycle-by-cycle current limiting, while the outer control loop provides output voltage control. When the boost converter is turned on using the HRNEN input, the NMOS switch turns on and the inductor current ramps up to its peak value, approximately 0.6A nominally. The current comparator turns off the NMOS switch for a fixed period of time to allow energy to be transferred to the output capacitor. When the voltage on the output capacitor equals or exceeds the desired output voltage, 10V nominally, the current loop is disabled until the load discharges the output capacitor to a voltage lower than the desired output voltage. Every time the output voltage falls below the desired value, the switching cycle starts and continues until the desired value is reached. The constant switching resulting in the charging and discharging of the output capacitor causes a ripple on the output voltage. The ripple on the output voltage depends on the external component parameters, such as the value of external capacitor, its ESR, etc. In both RE46C317 and RE46C318, when logic high is asserted on the HRNEN pin, the boost regulator is enabled. However, the horn output is not enabled until the output voltage reaches its nominal set point, 10V nominally. This ensures that the output voltage rises quickly to the necessary drive voltage for the Piezo horn. The boost regulator has been optimized to work with the external components as shown in the Typical Application circuit. 2012-2013 Microchip Technology Inc. DS20002301B-page 9
Figure 3-1 shows the horn turn-on delay after the HRNEN has been asserted high. After the boost voltage reaches its nominal set point, the HORNB output turns on. In this case, the HORNB output is driving a load current of 20 ma DC. FIGURE 3-1: Delay. RE46C317 Horn Turn-On Figure 3-2 shows the typical switching waveforms of the boost regulator. The top waveform shows the boost output, the center waveform shows the LX switching waveform, and the lower waveform shows the inductor current. FIGURE 3-2: Waveforms. RE46C317/18 Switching DS20002301B-page 10 2012-2013 Microchip Technology Inc.
4.0 PACKAGING INFORMATION 4.1 Package Marking Information 8-Lead PDIP (300 mil) Example XXXXXXXX XXXXXNNN YYWW RE46C318 V/P e3 ^^256 1315 8-Lead SOIC (3.90 mm) Example NNN RE46C317 SN e3 ^^1315 256 Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week 01 ) NNN e3 Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2012-2013 Microchip Technology Inc. DS20002301B-page 11
N NOTE 1 E1 1 2 3 D E A A2 A1 L c b1 b e eb DS20002301B-page 12 2012-2013 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2012-2013 Microchip Technology Inc. DS20002301B-page 13
Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002301B-page 14 2012-2013 Microchip Technology Inc.
2012-2013 Microchip Technology Inc. DS20002301B-page 15
NOTES: DS20002301B-page 16 2012-2013 Microchip Technology Inc.
APPENDIX A: REVISION HISTORY Revision B (May 2013) The following has been modified: 1. Added Maximum Human Body Model ESD value to Section 1.1, Absolute Maximum Ratings. Revision A (June 2012) Original Release of this Document. 2012-2013 Microchip Technology Inc. DS20002301B-page 17
NOTES: DS20002301B-page 18 2012-2013 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X X X Device Package Number Lead Free/ of Pins Tape and Reel Device: RE46C317 CMOS Piezo Horn Driver IC RE46C318 CMOS Piezo Horn Driver IC Package: E = Plastic Dual In-Line (300 mil Body), 8-Lead (PDIP) S = Small Plastic Outline - Narrow, 3.90 mm Body, 8-Lead (SOIC) Examples: a) RE46C317E8F: 8LD PDIP package, Lead Free b) RE46C317S8F: 8LD SOIC package, Lead Free c) RE46C317S8TF: 8LD SOIC package, Tape and Reel a) RE46C318E8F: 8LD PDIP package, Lead Free b) RE46C318S8F: 8LD SOIC package, Lead Free c) RE46C318S8TF: 8LD SOIC package, Tape and Reel 2012-2013 Microchip Technology Inc. DS20002301B-page 19
NOTES: DS20002301B-page 20 2012-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as unbreakable. Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == Trademarks The Microchip name and logo, the Microchip logo, dspic, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC 32 logo, rfpic, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipkit, chipkit logo, CodeGuard, dspicdem, dspicdem.net, dspicworks, dsspeak, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mtouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rflab, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. 2012-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62077-213-3 Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company s quality system processes and procedures are for its PIC MCUs and dspic DSCs, KEELOQ code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 2012-2013 Microchip Technology Inc. DS20002301B-page 21
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