N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S D Applications Switching application G Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information P HY1607 YYWWJ ÿ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 0% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 68 V GSS Gate-Source Voltage 25 V T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current T C =25 C 70 A Mounted on Large Heat Sink I DP 300µs Pulse Drain Current Tested T C =25 C 280 A I D P D Continuous Drain Current T C =25 C 70 T C =0 C 60 A Maximum Power Dissipation T C =25 C 160 T C =0 C 85 W R θjc Thermal Resistance-Junction to Case 0.5 C/W R θja Thermal Resistance-Junction to Ambient 62.5 Avalanche Ratings E AS Avalanche Energy, Single Pulsed L=0.3mH 5 mj Note *VD=50V Electrical Characteristics (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1607P Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 68 - - V I DSS V DS =55V, V GS =0V - - 1 Zero Gate Voltage Drain Current µa T J =85 C - - V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA 2 3 4 V I GSS Gate Leakage Current V GS =±25V, V DS =0V - - ±0 na R DS(ON) a Drain-Source On-state Resistance V GS =V, I DS =40A - 6.5 7 mω Diode Characteristics V SD a Diode Forward Voltage I SD =40A, V GS =0V - 0.8 1 V t rr Reverse Recovery Time - 33 - ns I SD =40A, dl SD /dt=0a/µs Reverse Recovery Charge - 61 - nc Q rr 2
Electrical Characteristics (Cont.) (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b HY1607P Min. Typ. Max. R G Gate Resistance V GS =0V,V DS =0V,F=1MHz - 1.5 - Ω C iss Input Capacitance V GS =0V, - 1480 - C oss Output Capacitance V DS =30V, - 190 - Reverse Transfer Capacitance Frequency=1.0MHz - 135 - C rss t d(on) Turn-on Delay Time - 14 - T r Turn-on Rise Time V DD =30V, R L =30Ω, - 13 - I DS =1A, V GEN =V, t d(off) Turn-off Delay Time R G =6Ω - 40 - Turn-off Fall Time - 7.2 - T f Gate Charge Characteristics b Q g Total Gate Charge - 45 - Q gs Gate-Source Charge V DS =30V, V GS =V, I DS =40A - 4 - Gate-Drain Charge - 15 - Q gd Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 175 90 150 80 Ptot - Power (W) 125 0 75 50 ID - Drain Current (A) 70 60 50 40 30 20 25 T C =25 o C 0 0 20 40 60 80 0 120 140 160 180 200 T C =25 o C,V G =V 0 0 20 40 60 80 0 120 140 160 180 200 Tj- Junction Temperature ( C) Tj- Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance 600 2 ms 1 Duty = 0.5 ID - Drain Current (A) 0 0ms 1s DC 1 T C =25 o C 0.1 0.01 0.1 1 0 500 Rds(on) Limit Normalized Effective Transient 0.1 0.01 0.01 0.02 0.05 Single Pulse 0.1 0.2 Mounted on minimum pad R θja :62.5 o C/W 1E-3 1E-4 1E-3 0.01 0.1 1 0 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 140 V GS = 6,7,8,9,V 9.5 ID - Drain Current (A) 120 0 80 60 40 20 5.5V 5V 4.5V RDS(ON) - On - Resistance (mω) 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 V GS =V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-Source Voltage (V) 5.0 0 20 40 60 80 0 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 17 I DS =30A 1.6 I DS =250µA RDS(ON) - On - Resistance (mω) 15 13 11 9 7 Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 5 4 5 6 7 8 9 0.2-50 -25 0 25 50 75 0 125 150 175 VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.4 2.2 2.0 V GS = V I DS = 30A 170 0 Normalized On Resistance 1.8 1.6 1.4 1.2 1.0 0.8 0.6 IS - Source Current (A) 1 T j =175 o C T j =25 o C 0.4 R ON @T j =25 o C: 6.5m Ω 0.2-50 -25 0 25 50 75 0 125 150 175 Tj - Junction Temperature ( C) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 2000 1800 1600 1400 1200 00 800 600 400 200 Crss Coss Frequency=1MHz Ciss VGS - Gate-source Voltage (V) 9 8 7 6 5 4 3 2 1 V DS = 30V I DS = 30A 0 0 5 15 20 25 30 35 40 VDS - Drain - Source Voltage (V) 0 0 20 40 60 80 0 120 140 160 QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L 0.01W E AS t AV Avalanche Test Circuit and Waveforms V DS DUT R D V DS 90% V GS R G V DD % tp V GS t d(on) t r t d(off) t f 7
Package Information TO-220 8
Devices Per Unit Package Type Unit Quantity TO-220 Tube 50 Classification Profile 9
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 0 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, A8 00 Hrs, Bias @ 125 C PCT JESD-22, A2 168 Hrs, 0%RH, 2atm, 121 C TCT JESD-22, A4 500 Cycles, -65 C~150 C