DCG85X12N SiC Schottky Diode RRM = 12 I F = 2x 41 Ultra fast switching Zero reverse recovery Part number DCG85X12N Backside: isolated UL pending 2 3 1 4 Features / dvantages: Ultra fast switching Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient of forward voltage Tvjm = pplications: Solar inverter Uninterruptible power supply (UPS) Welding equipment Switched-mode power supplies Medical equipment High speed rectifier Package: SOT-227B (minibloc) Isolation oltage: 3 ~ Industry standard outline RoHS compliant Epoxy meets UL 94- Base plate with luminium nitride isolation for low thermal resistance dvanced power cycling Terms & Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recoend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 219 IXYS ll rights reserved 1-6
SiC Diode (per leg) DCG85X12N Ratings Symbol Definitions Conditions min. typ. max. RSM max. non-repetitive reverse blocking voltage T J = 25 C 12 RRM max. repetitive reverse blocking voltage T J = 25 C 12 I R reverse current R = RRM T J = 25 C T J = F forward voltage I F = 2 T J = 25 C I F = 4 1.5 1.8 7 13 4 8 I F = 2 T J = I F = 4 2.2 3. I F average forward current T C = 8 C rectangular, d =.5 T C = 1 C T J = I F25 I F8 I F1 forward current based on typ. F and r F T C = 25 C T C = 8 C T C = 1 C I FSM max forward surge current t = 1 ms,half sine (5 Hz) T J = 25 C t P = 1 µs, pulse R = 115 F r F threshold voltage slope resistance for power loss calculation T J = 125 C T J = 125 C Q C total capacitive charge R = 8, I F = 4 T J = 25 C di/dt = 4 /µs C total capacitance R = R = 4 R = 8 R thjc R thjh T J = 25 C, f = 1 MHz.8.73 28.4 35.2 41 36 73 56 49 µ µ mw mw 2 nc 3 185 135 thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup.72.6 K/W K/W 219 IXYS ll rights reserved 2-6
DCG85X12N Package Outlines SOT-227B (minibloc) Ratings Symbol Definitions Conditions min. typ. max. Unit I RMS RMS current per terminal 1 T stg T op T J storage temperature operation temperature virtual junction temperature Weight 3 g M D mounting torque 1) screws to heatsink terminal connection screws d Spp d Spb d pp d pb creepage distance on surface striking distance through air ISOL isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside terminal to terminal terminal to backside 5 / 6 Hz, RMS; I ISOL < 1 m C P coupling capacity per switch between shorted terminals of diodes and back side metallization 1) further information see application note IXN73 on www.ixys.com/technicalsupport/appnotes.aspx (General / Isolation, Mounting, Soldering, Cooling) -4-4 -4 1.5 8.5 3.2 6.8 3 25 15 15 175 1.5 1.3 C C C Nm Nm Logo Product Marking Part No. XXXXX Zyyww abcd ssembly Line DateCode ssembly Code Part description D = Diode C = SiC G = extreme fast 85 = Current Rating [] X = Parallel legs 12 = Reverse oltage [] N = SOT-227 (minibloc) Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard DCG85X12N DCG85X12N Tube 1 52214 Equivalent Circuits for Simulation I R *on die level, typical T J = 125 C T J = max R max threshold voltage slope resistance *.8 28.4.73 35.2 mw 219 IXYS ll rights reserved 3-6
DCG85X12N Outlines SOT-227B (minibloc) T J K Z P Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 M W N * Center of each nut pocket * L O D S E U B 4 H G F * Q 3 1 2 C R Dim. Millimeter Inches min max min max 31.5 31.88 1.24 1.255 B 7.8 8.2.37.323 C 4.9 4.29.161.169 D 4.9 4.29.161.169 E 4.9 4.29.161.169 F 14.91 15.11.587.595 G 3.12 3.3 1.186 1.193 H 37.8 38.23 1.488 1.55 J 11.68 12.22.46.481 K 8.92 9.6.351.378 L.74.84.29.33 M 12.5 13.1.492.516 N 25.15 25.42.99 1.1 O 1.95 2.13.77.84 P 4.95 6.2.195.244 Q 26.54 26.9 1.45 1.59 R 3.94 4.42.155.167 S 4.55 4.85.179.191 T 24.59 25.25.968.994 U -.5.1 -.2.4 3.2 5.5.126.217 W 19.81 21.8.78.83 Z 2.5 2.7.98.16 2 3 1 4 219 IXYS ll rights reserved 4-6
DCG85X12N SiC Diode (per leg) 12 2. 1 1.6 I F [] 8 6 4 T J = 25 C 125 C I R [m] 1.2.8 T J = 25 C 125 C 2.4 1 2 3 4 5 F [] Fig. 1 Typ. forward characteristics. 8 1 12 14 16 18 R [] Fig. 2 Typ. reverse characteristics 28 3 24 2 16 I F(peak) 12 [] 8 4 1% Duty 3% Duty 5% Duty 7% Duty DC 25 2 P tot 15 [W] 1 5 25 5 75 1 125 15 175 T C [ C] Fig. 3 Typ. current derating 5 1 15 Fig. 4 Power derating T C [ C] 24 2 16 Q C 12 [nc] 8 4 32 28 24 2 C 16 [] 12 8 4 T J = 25 C 2 4 6 8 1 R [] Fig. 5 Typ. recovery charge vs. reverse voltage.1 1 1 1 1 R [] Fig. 6 Typ. junction capacitance vs. reverse oltage 219 IXYS ll rights reserved 5-6
DCG85X12N SiC Diode (per leg).8.6 Z thjh [K/W].4.2. 1 1 1 1 1 t p [ms] Fig. 7 Typ. transient thermal impedance 219 IXYS ll rights reserved 6-6