FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. TO--L. Cathode. Anode. Cathode. Anode Absolute Maximum Ratings T C = 5 o C unless otherwise noted. Symbol Parameter FFSP65A Unit RM Peak Repetitive Reverse Voltage 65 V E AS Single Pulse Avalanche Energy (Note ) 6 mj Continuous Rectified Forward Current @ T C < 5 o C Continuous Rectified Forward Current @ TC < 35 C 5 A, Max Non-Repetitive Peak Forward Surge Current T C = 5 o C, μs 76 A T C = 5 o C, μs 7 A,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, t p = 8.3 ms 56 A,RM Repetitive Forward Surge Current Half-Sine Pulse, t p = 8.3 ms 38 A T C = 5 o C W Ptot Power Dissipation T C = 5 o C 9 W T J, T STG Operating and Storage Temperature Range -55 to +75 o C Thermal Characteristics Symbol Parameter Ratings Unit R θjc Thermal Resistance, Junction to Case, Max..35 o C/W Semiconductor Components Industries, LLC, 7 Sep, 7, Rev.. Publication Order Number: FFSP65A/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP65A FFSP65A TO--L Tube N/A N/A 5 units Electrical Characteristics T C = 5 o C unless otherwise noted. V F Symbol Parameter Test Conditions Min. Typ. Max. Unit Forward Voltage Typical Characteristics T J = 5 C unless otherwise noted. Figure. Forward Characteristics = A, T C = 5 o C -.5.75 = A, T C = 5 o C -.6. = A, T C = 75 o C -.7. = 65 V, T C = 5 o C - - I R Reverse Current = 65 V, T C = 5 o C - - μa = 65 V, T C = 75 o C - - 6 Q C Total Capacitive Charge V = V - 3 - nc C Total Capacitance Notes: : E AS of 6 mj is based on starting T J = 5 C, L =.5 mh, I AS = 6 A, V = 5 V. = V, f = khz - 575 - = V, f = khz - 6 - = V, f = khz - 7 - Figure. Reverse Characteristics -5 V pf, FORWARD CURRENT (A) 8 6 T J = 75 o C T J = 5 o C T J = 5 o C T J = -55 o C T J = 75 o C..5..5. I R, REVERSE CURRENT (A) -6-7 -8-9 TJ = 75 o C TJ = 5 o C TJ = 75 o C TJ = 5 o C TJ = -55 o C 3 5 6 65 V F, FORWARD VOLTAGE (V) Figure 3. Current Derating Figure. Power Derating, PEAK FORWARD CURRENT (A) 5 D =. D =. D =.3 5 D =.5 D =.7 D = 5 5 75 5 5 75 T C, CASE TEMPERATURE ( o C) P TOT, POWER DISSIPATION (W) 8 5 5 75 5 5 75 T C, CASE TEMPERATURE ( o C)
Typical Characteristics T J = 5 C unless otherwise noted. Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage Q C, CAPACITIVE CHARGE (nc) 5 3 3 5 665 Figure 7. Capacitance Stored Energy CAPACITANCE (pf). 65 E C, CAPACITIVE ENERGY (μj) 8 6 3 5 665 Figure 8. Junction-to-Case Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, Z θjc. DUTY CIRCLE-DESCENDING ORDER D=.5...5. NOTES:. Z θjc (t) = r(t) x R θjc. R θjc =.35 o C/W SINGLE PULSE Peak T J = P DM x Z θjc (t) + T C Duty Cycle, D = t / t. -6-5 - -3 - - t, RECTANGULAR PULSE DURATION (sec) P DM t t 3
Test Circuit and Waveforms L =.5mH Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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