Revision: Rev

Similar documents
Revision: Rev

Tire Pressure Monitoring Sensor

Revision: Rev

BGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

BGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary

Revision: Rev

BGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

Revision: Rev

Revision: Rev

Revision: Rev

Revision: Rev

Revision: Rev

BGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,

Revision: Rev

Revision: Rev

BGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.

BGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Power Management & Multimarket

LTE Band-13 ( MHz) for GNSS

LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.

BGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),

Revision: Rev

Revision: Rev

BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

About this document. Application Note AN420

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.

BGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,

Power Management & Multimarket

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.

Power Management & Multimarket

Band 20 ( MHz)

Power Management & Multimarket

Revision: Rev

BGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012

BGSF110GN26. Preliminary Datasheet. RF & Protection Devices

Power Management & Multimarket

Revision: Rev

BFR840L3RHESD for 5 to 6 GHz

Power Management & Multimarket

Power Management & Multimarket

BGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.

Power Management & Multimarket

AN523. About this document. Scope and purpose

SPDT RF CMOS Switch. Revision: Rev

Power Management & Multimarket

BFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,

in 1550 MHz MHz with a High Q

Revision: Rev

Power Management & Multimarket

Revision: Rev

BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,

BFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,

Power Management & Multimarket

BGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,

Revision: Rev

Single Band LTE LNA BGA7M1N6 for MHz to 2200 MHz, Using Revision: Rev

Revision: Rev

LED Drivers for High Power LEDs

Power Management & Multimarket

TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

BGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.

Power Management & Multimarket

Power Management & Multimarket

BFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

BFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.

BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

Revision: Rev

Power Management & Multimarket

BFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,

Power Management & Multimarket

BFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

Power Management & Multimarket

BFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision

to 5GHz Revision: Rev

BFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,

BGA628L7. Data Sheet. RF & Protection Devices. Silicon Germanium Wide Band Low Noise Amplifier. Revision 1.1, Preliminary

BGA734L16. Data Sheet. RF & Protection Devices. Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Revision 1.1,

Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.

BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

High Precision Hall Effect Switch for Consumer Applications

BGA735N16. Data Sheet. RF & Protection Devices. High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)

BFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

BFP650. Data Sheet. RF & Protection Devices. High Linearity Low Noise SiGe:C NPN RF Transistor. Revision 1.0,

LED Drivers for High Power LEDs

High Precision Automotive Hall Effect Switch for 5V Applications

TVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

Transcription:

BGM1043N7 Low-Noise Front-End Module for Global Navigation Satellite Systems (GNSS) Application Using High-Q Inductors Application Note AN283 Revision: Rev. 1.0 RF and Protection Devices

Edition Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BGM1043N7 Application Note AN283 Revision History: Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN283, Rev. 1.0 3 / 23

BGM1043N7 List of Content, Figures and Tables Table of Content 1 BGM1043N7 GPS and GLONASS Front-End Module... 5 2 Introduction... 6 3 Description... 8 4 Application Circuit and Block Diagram... 9 5 Measurement Results... 10 6 Measured Graphs for GPS and GLONASS Bands... 12 7 Miscellaneous Measured Graphs... 18 8 Evaluation Board and layout Information... 21 9 Authors... 22 List of Figures Figure 1 BGM1043N7 in TSNP-7-10 Package... 5 Figure 2 RF System Overview: Mobile Phone... 6 Figure 3 GNSS system with integrated GNSS FEM BGM1043N7 for mobile/portable and personal navigation devices... 7 Figure 4 Block Diagram of BGM1043N7... 8 Figure 5 Schematic diagram of the BGM1043N7 application circuit... 9 Figure 6 Wideband Insertion Power Gain of BGM1043N7... 12 Figure 7 Narrowband Insertion Power Gain of BGM1043N7 for GPS and GLONASS bands... 12 Figure 8 Input Matching of BGM1043N7 for GPS and GLONASS bands... 13 Figure 9 Output Matching of BGM1043N7 for GPS and GLONASS bands... 13 Figure 10 Reverse Isolation of BGM1043N7 for GPS and GLONASS bands... 14 Figure 11 Noise Figure of BGM1043N7 for GPS and GLONASS bands... 14 Figure 12 Input 1dB Compression Point of BGM1043N7 at supply voltage of 1.8V for GPS and GLONASS Figure 13 bands... 15 Input 1dB Compression Point of BGM1043N7 at supply voltage of 2.8V for GPS and GLONASS bands... 15 Figure 14 Carrier and intermodulation products of BGM1043N7 for GPS band at Vcc=1.8V... 16 Figure 15 Carrier and intermodulation products of BGM1043N7 for GPS band at Vcc=2.8V... 16 Figure 16 Carrier and intermodulation products of BGM1043N7 for GLONASS band at Vcc=1.8V... 17 Figure 17 Carrier and intermodulation products of BGM1043N7 for GLONASS band at Vcc=2.8V... 17 Figure 18 Stability Factor K of BGM1043N7 upto 10 GHz... 18 Figure 19 Stability Factor µ1 of BGM1043N7 upto 10 GHz... 18 Figure 20 Stability Factor µ2 of BGM1043N7 upto 10 GHz... 19 Figure 21 Input and Output Matching of BGM1043N7 for GPS and GLONASS bands with Vcc=1.8V... 19 Figure 22 Input and Output Matching of BGM1043N7 for GPS and GLONASS bands with Vcc=2.8V... 20 Figure 23 Picture of Evaluation Board BGM1043N7 V3.0... 21 Figure 24 PCB Layer Information... 21 List of Tables Table 1 Pin Assignment of BGM1043N7... 9 Table 2 Bill-of-Materials... 9 Table 3 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V... 10 Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V... 11 Application Note AN283, Rev. 1.0 4 / 23

BGM1043N7 BGM1043N7 GPS and GLONASS Front-End Module 1 BGM1043N7 GPS and GLONASS Front-End Module 1.1 Features Operating frequency: 1575.42 MHz and 1598.06-1605.38 MHz High Gain: 15.1 db Low Noise Figure (GPS): 1.5 db Low current consumption: 4.0 ma Out-of-band rejection in cellular bands: > 43 dbc Input compression point in cellular bands: 30 dbm Supply voltage: 1.5 V to 3.6 V Tiny TSNP-7-10 leadless package (2.3 x 1.7 x 0.73 mm 3 ) RF output internally matched to 50 Ω IEC ESD contact discharge of RF input pin: 6 kv Only 3 external SMD parts RoHS compliant package (Pb-free) Figure 1 BGM1043N7 in TSNP-7-10 Package 1.2 Applications - GPS (Global Positioning System) working in the L1 band at 1575.42 MHz - GLONASS (Globalnaya Navigatsionnaya Sputnikovaya Sistema) working in the L1 band from 1598.06 MHz to 1605.38 MHz Application Note AN283, Rev. 1.0 5 / 23

BGM1043N7 Introduction 2 Introduction Global Navigation Satellite System or GNSS receiver, as we know, works on the reception of location based information from satellite signals. There are several standards worldwide like GPS, GLONASS, Galileo and COMPASS Bei Du. However, the power levels of the satellite signals received, can be lower than -130 dbm. This poses a challenge on the sensitivity of the GNSS receiver. Along with this, the ever growing disturbing or jamming signals in the adjacent cellular bands makes the design of the receiver front-end even more difficult. The rapidly growing market for GNSS systems is driving the design of advanced and high-performance GNSS receivers. A simple overview of the GNSS RF system in a mobile phone or other handheld devices is shown in Figure 2. Mobile Phone / Handheld device Satellite GNSS signal Tranceiver module GSM800/GSM900/ DCS/PCS1800/ UMTS/ WLAN Tx Signal GNSS Receiver IC Int. LNA GNSS RF Front-end module ESD protection GNSS Signal < -130dBm Blocking Signal Figure 2 RF System Overview: Mobile Phone GNSS receivers for mobile or handheld applications are always under the threat of high power cellular signals. Due to the coexistence of GNSS and Cellular services, there is a strong coupling of the DCS/PCS and Cellular signals to the GNSS receiver. The performance of a standard integrated GNSS receiver chip cannot meet the specifications required for the present systems. An external RF front-end is essential to achieve this required performance. The most important prerequisites for the front-end of a GNSS receiver are low noise figure and sufficient amplification of the desired signal together with high attenuation of the jamming signals. Application Note AN283, Rev. 1.0 6 / 23

BGM1043N7 2.1 Systems overview of a GNSS receiver Several configurations can be adopted for a GNSS receiver chain. In all configurations, as mentioned earlier, a RF front-end like BGM1043N7 is placed between the antenna and the GNSS receiver chip. Mobile/portable devices as well as personal navigation devices request decreasing form factor used by the implementation of the GNSS function in the devices. BGM1043N7 supports the designers to minimize the area in the front-end. Such a configuration is shown in Figure 3. The BGM1043N7 can also be used for the active antenna module. Embedded ANT BGM1043N7 BPF LNA GNSS Receiver IC Figure 3 GNSS system with integrated GNSS FEM BGM1043N7 for mobile/portable and personal navigation devices Application Note AN283, Rev. 1.0 7 / 23

BGM1043N7 Description 3 Description The BGM1043N7 is a combination of a low-insertion-loss pre-filter with Infineon s high performance low noise amplifier (LNA) for Global Positioning System (GPS) and Globalnaya Navigatsionnaya Sputnikovaya Sistema (GLONASS) applications. Both, GPS and GLONASS frequency bands, can be used at the same time. Through the low insertion loss of the filter, the BGM1043N7 provides 15.1 db gain, 1.5 db noise figure and high linearity performance. In addition BGM1043N7 provides very high out-of-band attenuation in conjunction with a high input compression point. It can withstand IEC61000-4-2 ESD contact discharge at the RF input as high as 6 kv in the application circuit shown in Figure 5. Its current consumption is as low as 4.0 ma. It operates over the 1.5 V to 3.6 V supply voltage range. Figure 4 Block Diagram of BGM1043N7 Application Note AN283, Rev. 1.0 8 / 23

BGM1043N7 Application Circuit and Block Diagram 4 Application Circuit and Block Diagram The BGM1043N7 is internally matched at the output to 50 Ohm. The LNA bias circuitry is also integrated on chip. Therefore, only three external components are required in the application. The application schematic is shown in Figure 5 and the function of the external passives is listed in Table 2. 4.1 Application Schematic Figure 5 Schematic diagram of the BGM1043N7 application circuit Table 1 Pin Assignment of BGM1043N7 Pin No. Symbol Function 1 VCC Power Supply 2 PON Power ON/OFF 3 RFIN RF Input 4 SO Pre-Filter Output 5 AI LNA Input 6 RFOUT RF Output 7 GND DC and RF ground Table 2 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C1 1.0 µf 0402 Various Supply filtering L1 9.1 nh 0402 Murata LQW15A Matching/ESD protection Inductor L2 8.2 nh 0402 Murata LQW15A Matching Inductor Q1 BGM1043N7 TSNP-7-10 Infineon GPS/GLONASS FEM Application Note AN283, Rev. 1.0 9 / 23

BGM1043N7 Measurement Results 5 Measurement Results Measurement results of the BGM1043N7 are presented in this section. The measurements are performed on the Infineon application board at room temperature. The performances of the BGM1043N7 are here provided for the voltage of 1.8V (Table 3) and 2.8V (Table 4). The data exclude PCB and SMA connector losses, unless otherwise mentioned. Table 3 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 4.2 ma Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 15.0 14.4 db Noise Figure NF 1.48 1.83 db Input Return Loss RLin 19.5 17.3 db PCB and SMA connectors of 0.12 db losses substracted Output Return Loss RLout 24.9 28.3 db Reverse Isolation IRev 21.3 21.9 db Input P1dB IP1dB -8.9-8.0 dbm Output P1dB OP1dB 5.1 5.4 dbm f gps = 1575.42 MHz f GLONASS = 1605 MHz Input IP3 In-band IIP3-6.6-5.6 dbm Output IP3 In-band OIP3 8.4 8.8 dbm f 1gps = 1575 MHz, f 2gps = 1576MHz f 1GLONASS =1602 MHz, f 2GLONASS =1603 MHz P 1IN = P 2IN = -30 dbm Rejection 750MHz 1) Rej 750M 52.0 dbc f = 750 MHz Rejection 900MHz 1) Rej 900M 48.5 dbc f = 806 MHz - 928 MHz Rejection 1800MHz 1) Rej 1800M 42.9 dbc f = 1710 MHz - 1980 MHz Rejection 2400MHz 1) Rej 2400M 49.6 dbc f = 2400 MHz - 2500 MHz Input P1dB IP1dB 900M 29.5 dbm f = 900 MHz Input P1dB IP1dB 1710M 31.5 dbm f = 1710 MHz LTE band-13 2 nd Harmonic Input IP3 out-of-band H2 input referred -49.4 dbm IIP3 OOB 63.3 dbm f IN = 787.76 MHz, P IN = +15 dbm; f H2 = 1575.52 MHz f 1 = 1712.7 MHz, f 2 = 1850 MHz P 1IN = +10 dbm, P 2IN = +10 dbm; f IIP3 = Stability k >1 -- Unconditionnally Stable from 0 to 10GHz 1) Rejection is defined as following: [Gain at 1575.42 MHz] [Attenuation@stopband frequency] Application Note AN283, Rev. 1.0 10 / 23

BGM1043N7 Measurement Results Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 4.4 ma Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 15.1 14.5 db Noise Figure NF 1.51 1.83 db Input Return Loss RLin 20.6 17.9 db PCB and SMA connectors of 0.12 db losses substracted Output Return Loss RLout 21.4 23.8 db Reverse Isolation IRev 21.8 22.3 db Input P1dB IP1dB -6.3-5.7 dbm Output P1dB OP1dB 7.8 7.8 dbm f gps = 1575.42 MHz f GLONASS = 1605 MHz Input IP3 In-band IIP3-6.5-5.5 dbm Output IP3 In-band OIP3 8.6 9.0 dbm f 1gps = 1575 MHz, f 2gps = 1576MHz f 1GLONASS =1602 MHz, f 2GLONASS =1603 MHz Input power= -30 dbm Rejection 750MHz 1) Rej 750M 51.9 dbc f = 750 MHz Rejection 900MHz 1) Rej 900M 48.6 dbc f = 806 MHz - 928 MHz Rejection 1800MHz 1) Rej 1800M 43.0 dbc f = 1710 MHz - 1980 MHz Rejection 2400MHz 1) Rej 2400M 49.5 dbc f = 2400 MHz - 2500 MHz Input P1dB IP1dB 900M 31.0 dbm f = 900 MHz Input P1dB IP1dB 1710M 33.0 dbm f = 1710 MHz LTE band-13 2 nd Harmonic Input IP3 out-of-band H2 input referred -49.7 dbm IIP3 OOB 63.4 dbm f IN = 787.76 MHz, P IN = +15 dbm; f H2 = 1575.52 MHz f 1 = 1712.7 MHz, f 2 = 1850 MHz P 1IN = +10 dbm, P 2IN = +10 dbm; f IIP3 = Stability k >1 -- Unconditionnally Stable from 0 to 10GHz 1) Rejection is defined as following: [Gain at 1575.42 MHz] [Attenuation@stopband frequency] Application Note AN283, Rev. 1.0 11 / 23

S21 (db) S21 (db) BGM1043N7 Measured Graphs for GPS and GLONASS Bands 6 Measured Graphs for GPS and GLONASS Bands 20 10 15.1 db Gain Gain at Vcc=1.8V Gain at Vcc=2.8V 0-10 -20-30 -40-50 -60 787 MHz -36.5 db 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Figure 6 Wideband Insertion Power Gain of BGM1043N7 16 Narrowband gain Gain at Vcc=1.8V Gain at Vcc=2.8V 15.4 15.1 db 14.8 15 db 14.5 db 14.2 14.4 db 13.6 13 1500 1525 1550 1575 1600 1625 1650 Figure 7 Narrowband Insertion Power Gain of BGM1043N7 for GPS and GLONASS bands Application Note AN283, Rev. 1.0 12 / 23

S22 (db) S11 (db) BGM1043N7 Measured Graphs for GPS and GLONASS Bands 0-5 Input matching S11 at Vcc=1.8V S11 at Vcc=2.8V -10-15 -19.5 db -17.3 db -20-20.6 db -17.9 db -25 1500 1525 1550 1575 1600 1625 1650 Figure 8 Input Matching of BGM1043N7 for GPS and GLONASS bands 0-5 Output matching S22 at Vcc=1.8V S22 at Vcc=2.8V -10-15 -20-21.4 db -23.8 db -25-30 -35-24.9 db -28.3 db -40 1500 1525 1550 1575 1600 1625 1650 Figure 9 Output Matching of BGM1043N7 for GPS and GLONASS bands Application Note AN283, Rev. 1.0 13 / 23

NF (db) S12 (db) BGM1043N7 Measured Graphs for GPS and GLONASS Bands -17-19 -21 Isolation -21.3 db -21.9 db S12 at Vcc=1.8V S12 at Vcc=2.8V -23-21.8 db -22.3 db -25-27 1500 1525 1550 1575 1600 1625 1650 Figure 10 Reverse Isolation of BGM1043N7 for GPS and GLONASS bands 3 2.8 2.6 2.4 Noise figure NF at Vcc=1.8V NF at Vcc=2.8V 2.2 2 1.83 1.8 1.6 1.4 1.2 1.51 1.48 1.83 1 1559 1567 1575 1583 1591 1599 1607 1615 Figure 11 Noise Figure of BGM1043N7 for GPS and GLONASS bands Application Note AN283, Rev. 1.0 14 / 23

Gain (db) Gain (db) BGM1043N7 Measured Graphs for GPS and GLONASS Bands 16 15-30 dbm 15 db Compression point at 1dB with Vcc=1.8V P1dB at Vcc=1.8V GPS (1575.42MHz) P1dB at Vcc=1.8V GLONASS (1605MHz) -8.89 dbm 14 db 14-30 dbm 14.4 db 13-7.97 dbm 13.4 db 12 11 10-30 -25-20 -15-10 -5 0 Power (dbm) Figure 12 Input 1dB Compression Point of BGM1043N7 at supply voltage of 1.8V for GPS and GLONASS bands 16 15 14-30 dbm 15 db -30 dbm 14.5 db Compression point at 1dB with Vcc=2.8V P1dB at Vcc=2.8V GPS (1575.42MHz) P1dB at Vcc=2.8V GLONASS (1605MHz) -6.28 dbm 14 db 13-5.71 dbm 13.5 db 12 11 10-30 -25-20 -15-10 -5 0 Power (dbm) Figure 13 Input 1dB Compression Point of BGM1043N7 at supply voltage of 2.8V for GPS and GLONASS bands Application Note AN283, Rev. 1.0 15 / 23

Power (dbm) Power (dbm) BGM1043N7 Measured Graphs for GPS and GLONASS Bands 0 Intermodulation for GPS band -10-20 -30 1575 MHz -15.17 1576 MHz -15.17-40 -50-60 -70-80 -90 1574 MHz -63.14 1577 MHz -62.28-100 1573 1574 1575 1576 1577 1578 Figure 14 Carrier and intermodulation products of BGM1043N7 for GPS band at Vcc=1.8V 0-10 Intermodulation for GPS band 1575 MHz -15.09 1576 MHz -15.09-20 -30-40 -50-60 -70-80 -90 1574 MHz -63.13 1577 MHz -62.42-100 1573 1574 1575 1576 1577 1578 Figure 15 Carrier and intermodulation products of BGM1043N7 for GPS band at Vcc=2.8V Application Note AN283, Rev. 1.0 16 / 23

Power (dbm) Power (dbm) BGM1043N7 Measured Graphs for GPS and GLONASS Bands 0-10 Intermodulation for GLONASS band 1602 MHz -15.58 1603 MHz -15.61-20 -30-40 -50-60 -70-80 -90 1601 MHz -65.02 1604 MHz -64.37-100 1600 1601 1602 1603 1604 1605 Figure 16 Carrier and intermodulation products of BGM1043N7 for GLONASS band at Vcc=1.8V 0-10 Intermodulation for GLONASS band 1602 MHz -15.48 1603 MHz -15.51-20 -30-40 -50-60 -70-80 -90 1601 MHz -64.99 1604 MHz -64.45-100 1600 1601 1602 1603 1604 1605 Figure 17 Carrier and intermodulation products of BGM1043N7 for GLONASS band at Vcc=2.8V Application Note AN283, Rev. 1.0 17 / 23

7 Miscellaneous Measured Graphs BGM1043N7 Miscellaneous Measured Graphs 5 4 Stability K factor Stability K factor at Vcc=1.8V Stability K factor at Vcc=2.8V 3 2 1 0 1.26 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Figure 18 Stability Factor K of BGM1043N7 upto 10 GHz 5 4 Stability Mu1 factor Stability Mu1 factor at Vcc=1.8V Stability Mu1 factor at Vcc=2.8V 3 2 1 1.77 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Figure 19 Stability Factor µ1 of BGM1043N7 upto 10 GHz Application Note AN283, Rev. 1.0 18 / 23

0 BGM1043N7 Miscellaneous Measured Graphs -1.0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 3 Stability Mu2 factor 2 1.68 1 0 Stability Mu2 factor at Vcc=1.8V Stability Mu2 factor at Vcc=2.8V 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Figure 20 Stability Factor µ2 of BGM1043N7 upto 10 GHz Input Output Input and Output matching with Vcc=1.8V 0.6 0.8 1.0 1.0 2.0 Swp Max 1615MHz 0.4 3.0 4.0 5.0 0.2 r 0.998 x 0.114 r 1.29 x -0.0295 10.0-0.2 r 0.975 x 0.0705 r 1.05 x -0.212-10.0-5.0-4.0-0.4-3.0-2.0-0.6-0.8 Swp Min 1559MHz Figure 21 Input and Output Matching of BGM1043N7 for GPS and GLONASS bands with Vcc=1.8V Application Note AN283, Rev. 1.0 19 / 23

0 BGM1043N7 Miscellaneous Measured Graphs -1.0 0.2 0.4 0.6 0.8 2.0 1.0 1.0 3.0 4.0 5.0 10.0 Input Input and Output matching with Vcc=2.8V Output 0.6 0.8 2.0 Swp Max 1615MHz 0.4 3.0 0.2 r 0.969 x 0.165 r 1.27 x 0.0101 4.0 5.0 10.0-0.2 r 0.958 x 0.119 r 1.08 x -0.176-10.0-5.0-4.0-0.4-3.0-2.0-0.6-0.8 Swp Min 1559MHz Figure 22 Input and Output Matching of BGM1043N7 for GPS and GLONASS bands with Vcc=2.8V Application Note AN283, Rev. 1.0 20 / 23

BGM1043N7 Evaluation Board and layout Information 8 Evaluation Board and layout Information In this application note, the following PCB is used: PCB Marking: BGM1043N7 V3.0 M120319 PCB material: FR4 Figure 23 Picture of Evaluation Board BGM1043N7 V3.0 Vias FR4, 0.2mm Copper 35µm FR4, 0.8mm Figure 24 PCB Layer Information Application Note AN283, Rev. 1.0 21 / 23

9 Authors BGM1043N7 Jagjit Singh Bal, Senior Application Engineer of Business Unit RF and Protection Devices Dr. Chih-I Lin, Senior Staff Engineer of Business Unit RF and Protection Devices Authors Application Note AN283, Rev. 1.0 22 / 23

w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN283