PD-9583H RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary IRHLUB770Z JANSR2N766UB 60V, N-CHANNEL REF: MIL-PRF-9500/7 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB770Z 00K Rads (Si) 0.68Ω 0.8A JANSR2N766UB IRHLUB730Z 300K Rads (Si) 0.68Ω 0.8A JANSF2N766UB Refer to Page for 3 Additional Part Numbers - IRHLUBN770Z, IRHLUBC770Z, IRHLUBCN770Z International Rectifier s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Absolute Maximum Ratings Parameter ID @ VGS =.5V, TC = 25 C Continuous Drain Current 0.8 ID @ VGS =.5V, TC = 00 C Continuous Drain Current 0.5 IDM Pulsed Drain Current 3.2 Units PD @ TC = 25 C Max. Power Dissipation 0.6 W Linear Derating Factor 0.005 W/ C VGS Gate-to-Source Voltage ±0 V EAS Single Pulse Avalanche Energy 26.6 mj IAR Avalanche Current 0.8 A EAR Repetitive Avalanche Energy 0.06 mj dv/dt Peak Diode Recovery dv/dt ƒ.0 V/ns TJ Operating Junction -55 to 50 TSTG Storage Temperature Range Lead Temperature 300 (for 5s) C Weight 3 (Typical) mg For footnotes refer to the last page Features: UB (SHIELDED METAL LID) n 5V CMOS and TTL Compatible n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n Complimentary P-Channel Available - IRHLUB7970Z, IRHLUBN7970Z IRHLUBC7970Z & IRHLUBCN7970Z www.irf.com /5/2 A
IRHLUB770Z, JANSR2N766UB Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID = 250µA BVDSS/ TJ Temperature Coefficient of Breakdown 0.07 V/ C Reference to 25 C, ID =.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.68 Ω VGS =.5V, ID = 0.5A Ã Resistance VGS(th) Gate Threshold Voltage.0 2.0 V VDS = VGS, ID = 250µA VGS(th)/ TJ Gate Threshold Voltage Coefficient -.0 mv/ C gfs Forward Transconductance 0.23 S VDS = 0V, IDS = 0.5A Ã IDSS Zero Gate Voltage Drain Current.0 VDS= 8V,VGS=0V 0 µa VDS = 8V, VGS = 0V, TJ = 25 C IGSS Gate-to-Source Leakage Forward 00 na VGS = 0V IGSS Gate-to-Source Leakage Reverse -00 VGS = -0V Qg Total Gate Charge 3.6 VGS =.5V, ID = 0.8A Qgs Gate-to-Source Charge.5 nc VDS = 30V Qgd Gate-to-Drain ( Miller ) Charge.8 td(on) Turn-On Delay Time 8.0 VDD = 30V, ID = 0.8A, tr Rise Time 2 VGS = 5.0V, RG = 2Ω ns td(off) Turn-Off Delay Time 30 tf Fall Time 3 LS + LD Total Inductance 8. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 66 VGS = 0V, VDS = 25V Coss Output Capacitance 2 pf f = 00KHz Crss Reverse Transfer Capacitance 3.5 Rg Gate Resistance Ω f =.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 0.8 ISM Pulse Source Current (Body Diode) 3.2 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 0.8A, VGS = 0V trr Reverse Recovery Time 78 ns Tj = 25 C, IF = 0.8A, di/dt 00A/µs QRR Reverse Recovery Charge 75 nc VDD 25V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJA Junction-to-Ambient 200 C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics IRHLUB770Z, JANSR2N766UB International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Parameter Up to 300K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage 60 V V GS = 0V, I D = 250µA VGS(th) Gate Threshold Voltage.0 2.0 VGS = V DS, I D = 250µA I GSS Gate-to-Source Leakage Forward 00 na V GS = 0V I GSS Gate-to-Source Leakage Reverse -00 V GS = -0V I DSS Zero Gate Voltage Drain Current.0 µa V DS = 8V, V GS = 0V R DS(on) Static Drain-to-Source On-State Resistance (TO-39) 0.55 Ω VGS =.5V, I D = 0.5A R DS(on) Static Drain-to-Source On-state Resistance (UB) 0.68 Ω VGS =.5V, I D = 0.5A V SD Diode Forward Voltage.2 V VGS = 0V, I D = 0.8A. Part Numbers IRHLUB770Z, IRHLUB730Z and additional part numbers listed on page. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -2V -V -5V -6V -7V 38 ± 5% 300 ± 7.5% 38 ± 7.5% 60 60 60 60 60 35 62 ± 5% 355 ± 7.5% 33 ± 7.5% 60 60 60 60 30-85 ± 5% 380 ± 7.5% 29 ± 7.5% 60 60 60 0 - - VDS 70 60 50 0 30 20 0 0 0 - -2-3 - VGS -5-6 -7 LET=38 ± 5% LET=62 ± 5% LET=85 ± 5% For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area www.irf.com 3
I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) IRHLUB770Z, JANSR2N766UB 0 VGS TOP 0V.5V 3.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V 0 VGS TOP 0V.5V 3.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V 0. 2.0V 2.0V 60µs PULSE WIDTH Tj = 25 C 0.0 0. 0 00 V DS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 50 C 0. 0. 0 00 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 2.0 I D = 0.8A T J = 50 C.5 T J = 25 C.0 0. 0.5 V DS = 25V 60µs PULSE 5 WIDTH 0.0.0.5 2.0 2.5 3.0 3.5.0 V GS, Gate-to-Source Voltage (V) V GS =.5V 0.0-60 -0-20 0 20 0 60 80 00 20 0 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig. Normalized On-Resistance Vs. Temperature www.irf.com
V (BR)DSS, Drain-to-Source Breakdown Voltage (V) V GS(th) Gate threshold Voltage (V) IRHLUB770Z, JANSR2N766UB.6.0..2 I D = 0.8A 0.8 T J = 50 C.0 0.8 T J = 50 C 0.6 R DS(on), Drain-to -Source On Resistance (Ω) 0.6 Fig 5. Typical On-Resistance Vs Gate Voltage R DS (on), Drain-to -Source On Resistance ( Ω) 0. T J = 25 C 0. 0.2 T J = 25 C 2 3 5 6 7 8 9 0 2 0.2 Vgs =.5V 0 0.5.0.5 2.0 2.5 3.0 3.5 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 6. Typical On-Resistance Vs Drain Current 75 3.0 I D =.0mA 2.5 70 2.0 65.5 60.0 0.5 I D = 50µA I D = 250µA I D =.0mA I D = 50mA 55-60 -0-20 0 20 0 60 80 00 20 0 60 T J, Temperature ( C ) 0.0-60 -0-20 0 20 0 60 80 00 20 0 60 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5
I SD, Reverse Drain Current (A) V GS, Gate-to-Source Voltage (V) IRHLUB770Z, JANSR2N766UB 250 200 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd SHORTED 2 0 I D = 0.8A V DS = 8V V DS = 30V V DS = 2V C, Capacitance (pf) 50 00 C iss C oss 8 6 50 C rss 0 0 00 V DS, Drain-to-Source Voltage (V) 2 0 FOR TEST CIRCUIT SEE FIGURE 7 0 0.5.5 2 2.5 3 3.5.5 5 5.5 6 Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 0. Typical Gate Charge Vs. Gate-to-Source Voltage 0.0 0.8 T J = 50 C T J = 25 C I D, Drain Current (A) 0.6 0. 0.2 V GS = 0V 0. 0. 0.6 0.8.0.2..6 V SD, Source-to-Drain Voltage (V) 0.0 25 50 75 00 25 50 T C, Case Temperature ( C) Fig. Typical Source-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs. Case Temperature 6 www.irf.com
I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) IRHLUB770Z, JANSR2N766UB 0 OPERATION IN THIS AREA LIMITED BY R DS (on) 00µs 60 50 0 I D TOP 0.A 0.5A BOTTOM 0.8A ms 30 0. 0ms 20 Tc = 25 C Tj = 50 C Single Pulse DC 0.0 0. 0 00 000 V DS, Drain-to-Source Voltage (V) 0 0 25 50 75 00 25 50 Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig. Maximum Avalanche Energy Vs. Drain Current 000 Thermal Response ( Z thja ) 00 D = 0.50 0.20 0 0.0 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) P DM t t 2 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0. E-005 0.000 0.00 0.0 0. 0 00 000 t, Rectangular Pulse Duration (sec) Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7
IRHLUB770Z, JANSR2N766UB V (BR)DSS 5V tp VDS L DRIVER R G 20V V GS tp. D.U.T I AS 0.0Ω + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T..5V Q G 2V.2µF 50KΩ.3µF Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge Fig 7a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 7b. Gate Charge Test Circuit V GS V DS R D V DS 90% R G D.U.T. + - V DD V GS Pulse Width µs Duty Factor 0. % 0% V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8 www.irf.com
IRHLUB770Z, JANSR2N766UB Case Outline and Dimensions UB (Shielded Metal Lid Connected to th Pad) 3.25 [.28] 2.92 [.5] 0.6 [.02] 0. [.06] 0.30 R REF. [.02 R REF.] 0.96 [.038] 0.56 [.022] 2.7 [.08] 2. [.095] 2 3 0.55 R MIN. [.022 R MIN.] 0.355 [.0] MIN. 0.99 [.039] 0.89 [.035].2 [.056].7 [.06] 2.0 [.079].8 [.07] ME T AL LID NOT ES :. DIMENSIONING & TOLERANCING PER ASME Y.5M-99 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS. 5. PAD ASSIGNMENTS: = GATE, 2 = SOURCE, 3 = DRAIN, = SHIELDING CONNECTED TO THE LID. Case Outline and Dimensions UBN (Isolated Metal Lid, No th Pad) 3.25 [.28] 2.92 [.5] 0.6 [.02] 0. [.06] 0.96 [.038] 0.56 [.022] 2.7 [.08] 2. [.095] 2 3 0.355 [.0] MIN. 0.99 [.039] 0.89 [.035].2 [.056].7 [.06] 2.0 [.079].8 [.07] MET AL LID NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y.5M-99 2. CONTROLLING DIMENS ION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS. 5. PAD ASSIGNMENTS : = GATE, 2 = SOURCE, 3 = DRAIN, = ISOLATED METAL LID. www.irf.com 9
IRHLUB770Z, JANSR2N766UB Case Outline and Dimensions UBC (Shielded Ceramic Lid Connected to th Pad) 3.25 [.28] 2.92 [.5] 0.6 [.02] 0. [.06] 0.30 R REF. [.02 R REF.] 0.96 [.038] 0.56 [.022] 2.7 [.08] 2. [.095] 2 3 0.55 R MIN. [.022 R MIN.] 0.355 [.0] MIN..75 [.069].0 [.055] 2.0 [.079].8 [.07] 0.99 [.039] 0.89 [.035] CERAMIC LID NOTES :. DIMENSIONING & TOLERANCING PER ASME Y.5M-99 2. CONTROLLING DIMENS ION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS. 5. PAD ASSIGNMENTS : = GAT E, 2 = S OURCE, 3 = DRAIN, = SHIELDING CONNECTED TO T HE LID. Case Outline and Dimensions UBCN (Isolated Ceramic Lid, No th Pad) 3.25 [.28] 2.92 [.5] 0.6 [.02] 0. [.06] 0.96 [.038] 0.56 [.022] 2.7 [.08] 2. [.095] 2 3 0.355 [.0] MIN..75 [.069].0 [.055] 2.0 [.079].8 [.07] 0.99 [.039] 0.89 [.035] CERAMIC LID NOT ES :. DIMENSIONING & TOLERANCING PER ASME Y.5M-99 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS. 5. PAD ASSIGNMENTS: = GATE, 2 = SOURCE, 3 = DRAIN, = ISOLATED CERAMIC LID. 0 www.irf.com
IRHLUB770Z, JANSR2N766UB Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25 C, L= 83 mh Peak IL = 0.8A, VGS = 0V ƒ ISD 0.8A, di/dt 30A/µs, VDD 60V, TJ 50 C Pulse width 300 µs; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 0 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 09, condition A. Total Dose Irradiation with VDS Bias. 8 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 09, condition A. Additional Product Summaries (continued from page and 3) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUBN770Z 00K Rads (Si) 0.68Ω 0.8A JANSR2N766UBN IRHLUBN730Z 300K Rads (Si) 0.68Ω 0.8A JANSF2N766UBN UBN (ISOLATED METAL LID) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUBC770Z 00K Rads (Si) 0.68Ω 0.8A JANSR2N766UBC IRHLUBC730Z 300K Rads (Si) 0.68Ω 0.8A JANSF2N766UBC UBC (SHIELDED CERAMIC LID) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUBCN770Z 00K Rads (Si) 0.68Ω 0.8A JANSR2N766UBCN IRHLUBCN730Z 300K Rads (Si) 0.68Ω 0.8A JANSF2N766UBCN UBCN (ISOLATED CERAMIC LID) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9025, USA Tel: (30) 252-705 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 053, USA Tel: (978) 53-5776 TAC Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. / www.irf.com