MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM 5PowerTransistor,8V DataSheet Rev.. Final PowerManagement&Multimarket
OptiMOS TM 5PowerTransistor,8V 1Description SuperSO8 Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 1%avalanchetested Superiorthermalresistance Nchannel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61491 1 8 3 4 7 6 5 4 3 5 6 7 1 8 Table1KeyPerformanceParameters Parameter Value Unit VDS 8 V RDS(on),max 11.7 mω ID 49 A Qoss 19 nc QG(V..1V) 15 nc S 1 S S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks PGTDSON8 117N8NS 1) JSTD and JESD Rev..,14117
OptiMOS TM 5PowerTransistor,8V TableofContents Description............................................................................. Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Package Outlines....................................................................... 11 Revision History........................................................................ 1 Disclaimer............................................................................ 1 3 Rev..,14117
OptiMOS TM 5PowerTransistor,8V Maximumratings attj=5 C,unlessotherwisespecified TableMaximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current ) ID,pulse 196 A TC=5 C 49 31 19 A VGS=1V,TC=5 C VGS=1V,TC=1 C VGS=1V,TC=5 C,RthJA=5K/W 1) Avalanche energy, single pulse 3) EAS 14 mj ID=5A,RGS=5Ω Gate source voltage VGS V Power dissipation Ptot Operating and storage temperature Tj,Tstg 55 15 C 5.5 W TC=5 C TA=5 C,RthJA=5K/W 1) IEC climatic category; DIN IEC 681: 55/15/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case, bottom Thermal resistance, junction case, top RthJC 1.5.5 K/W RthJC K/W Device on PCB, 6 cm cooling area 1) RthJA 5 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. ) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4 Rev..,14117
OptiMOS TM 5PowerTransistor,8V 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th). 3 3.8 V VDS=VGS,ID=µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=8V,VGS=V,Tj=5 C VDS=8V,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 1 na VGS=V,VDS=V Drainsource onstate resistance RDS(on) 9.6 13.7 11.7 16.3 Gate resistance 1) RG 1.1 1.7 Ω mω VGS=1V,ID=5A VGS=6V,ID=1.5A Transconductance gfs 19 38 S VDS > ID RDS(on)max,ID=5A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss 1 13 pf VGS=V,VDS=4V,f=1MHz Output capacitance 1) Coss 18 3 pf VGS=V,VDS=4V,f=1MHz Reverse transfer capacitance 1) Crss 11 19 pf VGS=V,VDS=4V,f=1MHz Turnon delay time td(on) 1 ns Rise time tr 4 ns Turnoff delay time td(off) 16 ns Fall time tf 3 ns VDD=4V,VGS=1V,ID=5A, RG,ext=3Ω VDD=4V,VGS=1V,ID=5A, RG,ext=3Ω VDD=4V,VGS=1V,ID=5A, RG,ext=3Ω VDD=4V,VGS=1V,ID=5A, RG,ext=3Ω 1) Defined by design. Not subject to production test. 5 Rev..,14117
OptiMOS TM 5PowerTransistor,8V Table6Gatechargecharacteristics 1) Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Gate to source charge Qgs 5 nc VDD=4V,ID=5A,VGS=to1V Gate charge at threshold Qg(th) 3 nc VDD=4V,ID=5A,VGS=to1V Gate to drain charge ) Qgd 3 5 nc VDD=4V,ID=5A,VGS=to1V Switching charge Qsw 6 nc VDD=4V,ID=5A,VGS=to1V Gate charge total ) Qg 15 18 nc VDD=4V,ID=5A,VGS=to1V Gate plateau voltage Vplateau 5. V VDD=4V,ID=5A,VGS=to1V Gate charge total, sync. FET Qg(sync) 13 nc VDS=.1V,VGS=to1V Output charge ) Qoss 19 5 nc VDD=4V,VGS=V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 45 A TC=5 C Diode pulse current IS,pulse 196 A TC=5 C Diode forward voltage VSD.9 1.1 V VGS=V,IF=5A,Tj=5 C Reverse recovery time ) trr 37 73 ns VR=4V,IF=5A,diF/dt=1A/µs Reverse recovery charge ) Qrr 45 9 nc VR=4V,IF=5A,diF/dt=1A/µs 1) See Gate charge waveforms for parameter definition ) Defined by design. Not subject to production test. 6 Rev..,14117
OptiMOS TM 5PowerTransistor,8V 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 6 Diagram:Draincurrent 6 5 5 4 4 Ptot[W] 3 ID[A] 3 1 1 5 5 75 1 15 15 175 TC[ C] Ptot=f(TC) 5 5 75 1 15 15 175 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 ID[A] 1 1 1 1 1 µs 1 µs 1 µs 1 ms 1 ms DC ZthJC[K/W] 1 1 1.5..1.5..1 single pulse 1 1 1 1 1 1 1 1 VDS[V] ID=f(VDS);TC=5 C;D=;parameter:tp 1 1 6 1 5 1 4 1 3 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 7 Rev..,14117
OptiMOS TM 5PowerTransistor,8V Diagram5:Typ.outputcharacteristics 3 8 4 1 V Diagram6:Typ.drainsourceonresistance 5 V 5.5 V 6 V 7 V 18 16 ID[A] 16 1 7 V RDS(on)[mΩ] 14 1 1 8 1 V 8 4 6 V 5.5 V 5 V 6 4..5 1. 1.5..5 3. 3.5 4. VDS[V] ID=f(VDS);Tj=5 C;parameter:VGS 5 1 15 5 ID[A] RDS(on)=f(ID);Tj=5 C;parameter:VGS Diagram7:Typ.transfercharacteristics 1 Diagram8:Typ.forwardtransconductance 1 1 8 8 6 ID[A] 6 gfs[s] 4 4 15 C 5 C 4 6 8 1 VGS[V] ID=f(VGS); VDS > ID RDS(on)max;parameter:Tj 4 6 8 1 1 14 ID[A] gfs=f(id);tj=5 C 8 Rev..,14117
OptiMOS TM 5PowerTransistor,8V Diagram9:Drainsourceonstateresistance Diagram1:Typ.gatethresholdvoltage 4 18 16 14 max 3 µa µa RDS(on)[mΩ] 1 1 8 typ VGS(th)[V] 6 4 1 6 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=5A;VGS=1V 6 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances 1 4 Diagram1:Forwardcharacteristicsofreversediode 1 3 5 C 15 C 5 C, max 15 C, max 1 3 Ciss 1 C[pF] 1 Coss IF[A] 1 1 1 1 Crss 1 4 6 8 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5. VSD[V] IF=f(VSD);parameter:Tj 9 Rev..,14117
OptiMOS TM 5PowerTransistor,8V Diagram13:Avalanchecharacteristics 1 Diagram14:Typ.gatecharge 1 9 8 4 V 7 6 16 V 64 V IAV[A] 1 1 5 C VGS[V] 5 4 1 C 3 15 C 1 1 1 1 1 1 1 3 tav[µs] IAS=f(tAV);RGS=5Ω;parameter:Tj(start) 5 1 15 Qgate[nC] VGS=f(Qgate);ID=5Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 86 Gate charge waveforms 84 8 VBR(DSS)[V] 8 78 76 6 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1 Rev..,14117
OptiMOS TM 5PowerTransistor,8V 6PackageOutlines Figure1OutlinePGTDSON8,dimensionsinmm 11 Rev..,14117
OptiMOS TM 5PowerTransistor,8V RevisionHistory Revision:14117,Rev.. Previous Revision Revision Date Subjects (major changes since last revision). 14117 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 8176München,Germany 14InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1 Rev..,14117