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FCPF099N65S3 N-Channel SuperFET III MOSFET 650 V, 30 A, 99 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 85 mω Ultra Low Gate Charge (Typ. Q g = 57 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 57 pf) 00% Avalanche Tested RoHS Compliant Applications Telecom / Sever Power Supplies Industrial Power Supplies UPS / Solar Description SuperFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency. D G DS G TO-220F Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FCPF099N65S3 Unit V DSS Drain to Source Voltage 650 V V GSS Gate to Source Voltage Thermal Characteristics - DC ±30 V - AC (f > Hz) ±30 V I D Drain Current - Continuous (T C = 25 o C) 30* - Continuous (T C = 00 o C) 9* A I DM Drain Current - Pulsed (Note ) 75* A E AS Single Pulsed Avalanche Energy (Note 2) 45 mj I AS Avalanche Current (Note ) 4.4 A E AR Repetitive Avalanche Energy (Note ) 0.43 mj dv/dt MOSFET dv/dt 00 Peak Diode Recovery dv/dt (Note 3) 20 P D Power Dissipation (T C = 25 o C) 43 W - Derate Above 25 o C 0.34 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature. Symbol Parameter FCPF099N65S3 Unit R θjc Thermal Resistance, Junction to Case, Max. 2.94 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 62.5 S V/ns Semiconductor Components Industries, LLC, 207 April, 207, Rev..0 Publication Order Number: FCPF099N65S3/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCPF099N65S3 FCPF099N65S3 TO-220F Tube N/A N/A 50 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics V GS = 0 V, I D = ma, T J = 25 C 650 - - V BV DSS Drain to Source Breakdown Voltage V GS = 0 V, I D = ma, T J = 50 C 700 - - V ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = ma, Referenced to 25 o C - 0.68 - V/ o C V DS = 650 V, V GS = 0 V - - I DSS Zero Gate Voltage Drain Current μa V DS = 520 V, T C = 25 o C -.4 - I GSS Gate to Body Leakage Current V GS = ±30 V, V DS = 0 V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 3 ma 2.5-4.5 V R DS(on) Static Drain to Source On Resistance V GS = 0 V, I D = 5 A - 85 99 mω g FS Forward Transconductance V DS = 20 V, I D = 5 A - 9 - S Dynamic Characteristics C iss Input Capacitance V DS = 400 V, V GS = 0 V, - 230 - pf C oss Output Capacitance f = MHz - 50 - pf C oss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 57 - pf C oss(er.) Energy Related Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 77 - pf Q g(tot) Total Gate Charge at 0V V DS = 400 V, I D = 5 A, - 57 - nc Q gs Gate to Source Gate Charge V GS = 0 V - 4 - nc Q gd Gate to Drain Miller Charge (Note 4) - 23 - nc ESR Equivalent Series Resistance f = MHz - 0.4 - Ω Switching Characteristics t d(on) Turn-On Delay Time - 22 - ns t r Turn-On Rise Time V DD = 400 V, I D = 5 A, - 20 - ns t d(off) Turn-Off Delay Time V GS = 0 V, R g = 4.7 Ω - 58 - ns t f Turn-Off Fall Time (Note 4) - 5 - ns Source-Drain Diode Characteristics I S Maximum Continuous Source to Drain Diode Forward Current - - 30 A I SM Maximum Pulsed Source to Drain Diode Forward Current - - 75 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 5 A - -.2 V t rr Reverse Recovery Time V GS = 0 V, I SD = 5 A, - 374 - ns Q rr Reverse Recovery Charge di F /dt = 00 A/μs - 7.2 - μc Notes:. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 4.4 A, R G = 25 Ω, starting T J = 25 C. 3. I SD 5 A, di/dt 200 A/μs, V DD 400 V, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics RDS(ON), ID, Drain Current[A] Drain-Source On-Resistance [Ω] Figure. On-Region Characteristics 80 0 V GS = 0.0V 8.0V 7.0V 6.5V 6.0V 5.5V. 250μs Pulse Test 2. T C = 25 o C 0. 0. 0 20 V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics 2 3 4 5 6 7 8 9 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.4 0.3 0.2 0. *Note: T C = 25 o C V GS = 0V V GS = 20V IS, Reverse Drain Current [A] ID, Drain Current[A] 80 0 00 0 0. 0.0. V DS = 20V 2. 250μs Pulse Test 50 o C. V GS = 0V 2. 250μs Pulse Test 50 o C -55 o C 25 o C -55 o C 25 o C 0.0 0 20 40 60 80 I D, Drain Current [A] Figure 5. Capacitance Characteristics 00000 0.00 0.0 0.5.0.5 V SD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 0 *Note: I D = 5A Capacitances [pf] 0000 000 00 0 *Note:. V GS = 0V 2. f = MHz C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0. 0. 0 00 000 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] 8 6 4 2 V DS = 30V V DS = 400V 0 0 5 30 45 60 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A].2..0 0.9 0.8. V GS = 0V 2. I D = 0mA -50 0 50 00 50 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 0 Operation in This Area is Limited by R DS(on) DC ms 0ms 0μs 00μs 0.. T C = 25 o C 2. T J = 50 o C 3. Single Pulse 0.0 0 00 000 V DS, Drain-Source Voltage [V] Figure 8. On-Resistance Variation vs. Temperature RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] 3.0 2.5 2.0.5.0 0.5 0.0. V GS = 0V 2. I D = 5A -50 0 50 00 50 T J, Junction Temperature [ o C] Figure 0. Maximum Drain Current vs. Case Temperature 30 20 0 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure. Eoss vs. Drain to Source Voltage 5 0 E OSS [μj] 5 0 0 30 260 390 520 650 V DS, Drain to Source Voltage [V] 4
Typical Performance Characteristics (Continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 0. 0.0 E-3 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0. 0.05 0.02 0.0 SINGLE PULSE Figure 2. Transient Thermal Response Curve Duty Cycle, D = t / t 2 E-4 0-5 0-4 0-3 0-2 0-0 0 0 0 2 t, RECTANGULAR PULSE DURATION (sec) P DM t t 2 NOTES: Z θjc (t) = r(t) x R θjc R θjc = 2.94 o C/W Peak T J = P DM x Z θjc (t) + T C 5
I G = const. Figure 3. Gate Charge Test Circuit & Waveform V DS R L V DS 90% R G V GS V DD V 0V GS DUT 0% V GS t d(on) t r t d(off) tf t on t off Figure 4. Resistive Switching Test Circuit & Waveforms V GS Figure 5. Unclamped Inductive Switching Test Circuit & Waveforms 6
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 6. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
3.40 3.20 A B 0.36 9.96 7.00 3.28 3.08 B 2.66 2.42 0.70 SEE NOTE "F" 6.88 6.48 SEE NOTE "F" 6.00 5.60 X 45 B 6.07 5.67 (3.23) B 3 0.05 9.45 2.4.47.24 0.90 0.70 0.50 M A 30 2.96 2.56 0.45 0.25 B 0.60 0.45 2.54 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC9A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y4.5-994. F. OPTION - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5
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