c2657sh-gr1 Thermally-Enhanced High Power RF LDMOS FET W, 28 V, 26 269 MHz Description The LDMOS FET is designed for use in Doherty cellular power applications in the 26 MHz to 269 MHz frequency band. Input and output matching have been optimized for maximum performance as the peak side transistor in a Doherty amplifier. Other features include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package H-34288G-4/2 (db) V DD = 28 V, I DQ = 1 ma, ƒ = 26 MHz, 1 MHz carrier spacing, 3.84 MHz BW 1 32 36 4 44 48 52 5 4 3 Drain (%) Features Broadband internal matching, optimized for Doherty peak side Wide video bandwidth Typical single-carrier WCDMA performance, 269 MHz, 28 V, 1 db PAR @.1% CCDR - Output power at P 1dB = 5 W - = 29% - =.5 db - ACPR = 31.5 dbc at 269 MHz Capable of handling 1:1 VSWR @ 28 V, W (CW) output power Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) V DD = 28 V, I DQ = 115 ma, P OUT = 5 W average, ƒ = 269 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,1 db PAR @.1% CCDF Characteristic Symbol Min Typ Max Unit Gps..5 db Drain h D 27 29 % Adjacent Channel Power Ratio ACPR 31.5 3 dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Data Sheet 1 of 1 Rev. 3.1, -6-
DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = V, I DS = 1 ma V (BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1. µa V DS = 63 V, V GS = V I DSS 1. µa Gate Leakage Current V GS = 1 V, V DS = V I GSS 1. µa On-state Resistance V GS = 1 V, V DS =.1 V R DS(on).5 W Operating Gate Voltage V DS = 28 V, I DQ = 1.1 A V GS 2.65 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 65 V Gate-source Voltage V GS 6 to +1 V Operating Voltage V DD to +32 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +15 C Thermal Resistance (T CASE = 7 C, 15 W CW) RqJC.34 C/W Ordering Information Type and Version Order Code Package and Description Shipping V1 R V1RXTMA1 H-34288G-4/2, ceramic open-cavity, earless V1 R25 V1R25XTMA1 H-34288G-4/2, ceramic open-cavity, earless Tape & Reel, 5 pcs Tape & Reel, 25 pcs Data Sheet 2 of 1 Rev. 3.1, -6-
c2657sh-gr2 c2657sh-gr4 c2657sh-gr3 c2657sh-gr5 Typical Performance (data taken in a reference test fixture) V DD = 28 V, I DQ = 1 ma, ƒ = 2655 MHz, 1 MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma, ƒ = 269 MHz, 1 MHz carrier spacing, 3.84 MHz BW 5 5 (db) 4 3 1 32 36 4 44 48 52 Drain (%) (db) 4 3 1 32 36 4 44 48 52 Drain (%) V DD = 28 V, I DQ = 1 ma, ƒ = 26 MHz, 1 MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma, ƒ = 2655 MHz, 1 MHz carrier spacing, 3.84 MHz BW IMD & ACPR (dbc) - -3-4 IMD Low IMD Up ACPR 6 4 Drain (%) IMD & ACPR (dbc) - -3-4 IMD Low IMD Up ACPR 6 4 Drain (%) -5 32 36 4 44 48 52-5 32 36 4 44 48 52 Data Sheet 3 of 1 Rev. 3.1, -6-
c2657sh-gr12 c2657sh-gr7 c2657sh-gr8 Typical Performance (cont.) IMD & ACPR (dbc) - -3-4 V DD = 28 V, I DQ = 1 ma, ƒ = 269 MHz, 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR -5 32 36 4 44 48 52 6 4 Drain (%) IMD (dbc) - -25-3 -35 c2657sh-gr6-4 V DD = 28 V, I DQ = 1 ma, 1 MHz carrier spacing, 3.84 MHz BW 26 MHz 2655 MHz 269 MHz 3 34 38 42 46 5 54 IMD Up IMD Low Small Signal CW Performance V DD = 28 V, I DQ = 1 ma CW Performance V DD = 28 V, I DQ = 1 ma Power (db) 25 15 1 IRL -1 - -3 Input Return Loss (db) (db) 26 MHz 2655 MHz 269 MHz 6 5 4 3 1 (%) 5-4 245 255 265 275 285 Frequency (MHz) 15 34 36 38 4 42 44 46 48 5 52 54 56 Data Sheet 4 of 1 Rev. 3.1, -6-
c2657sh-gr9 c2657sh-gr12 c2657sh-gr11 c2657sh-gr11 c2657sh-gr1 Typical Performance (cont.) CW Performance at selected V DD I DQ = 1 ma, ƒ = 26 MHz CW Performance at selected V DD I DQ = 1 ma, ƒ = 2655 MHz V DD = 24 V V DD = 28 V V DD = 32 V 6 5 V DD = 24 V V DD = 28 V V DD = 32 V 6 5 Power (db) 4 3 (%) Power (db) 4 3 (%) 1 15 34 36 38 4 42 44 46 48 5 52 54 56 1 15 34 36 38 4 42 44 46 48 5 52 54 56 CW Performance at selected V DD I DQ = 1 ma, ƒ = 269 MHz V DD = 24 V V DD = 28 V V DD = 32 V 6 5 Power (db) 4 3 (%) 1 15 34 36 38 4 42 44 46 48 5 52 54 56 Data Sheet 5 of 1 Rev. 3.1, -6-
Broadband Circuit Impedance Frequency [MHz] Z Source Z Load 2585 2.23 4.85 4.41 3.7 26 2. 4.7 4.43 3.13 2655 2.13 4.56 4.44 3. 269 2.8 4.42 4.43 3.25 2725 2.4 4.28 4.41 3.31 D Z Source Z Load G S Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 11 ma P1dB Class AB Max Output Power Max Z Optimum Freq [MHz] Zs 26 4.52 j5.8 5.5 j2.4 48.1 54.3 269 3.6 j4.9.8 55.8 53.3 4 4.2 j4.2.5 55.3 53.9 245 2655 7.5 j6.7 5.5 j1.8.5 48.5 54.3 269 4.2 j4.9.9 56.6 53.5 224 4.4 j4.3.7 56.2 53.8 24 269 7.6 j6.5 5.7 j2.2 48.2 53.9 245 4.4 j4.9.3 54.5 53. 4.7 j4. 53.8 53.5 224 Pulsed CW signal: µsec, 1% duty cycle; 28 V, 5 ma P1dB Class B Max Output Power Max Z Optimum Freq [MHz] Zs 26 3.82 j6.78 5.9 j2.3.5 54. 54.7 295 4 j4.7.4 61.2 53.9 245 4.1 j4.4.3 61.1 54.1 257 2655 4.79 j6.8 5.7 j2.1.6 54.2 54.6 288 4 j4.6.6 61.1 53.7 234 4.3 j4.1.5 6.8 54.1 257 269 6.28 j6.24 5.6 j1.8.7 54.2 54.5 282 4.4 j4.6.6 6.5 53.6 229 4.6 j4.4 6.2 54. 251 Data Sheet 6 of 1 Rev. 3.1, -6-
c 2 6 2 1 5 7 f h _ c d _ 8-8 - 1 3 Reference Circuit, tuned for 26 269 MHz DUT Test Fixture Part No. LTN/ V1 PCB Rogers 435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower) R11 RO435,. (6) RO435,. (6) R81 C82 C81 C83 VDD S3 R83 R84 C7 C1 S1 VDD R82 S2 C2 C5 R15 R14 C R12 C4 RF_IN C14 C12 C11 C1 C6 C8 C3 RF_OUT R13 C3 C13 C15 C4 C2 VDD C9 C PTFC2657_IN_1 PTFC2657_OUT_1 A Reference circuit assembly diagram (not to scale) Component Information Component Description Suggested Manufacturer P/N Input C11 Chip capacitor, 1.7 pf ATC ATC1A1R7CW15XB C12 Chip capacitor, 1 pf ATC ATC1B1JW5XB C13, C14 Chip capacitor, 4.7 µf Nichicon F931C475MAA C15, C Chip capacitor, 1 pf ATC ATC1A1JW5XB C81, C82, C83 Capacitor, 1k pf Panasonic Electronic Components ECJ-1VB1H12K (table cont. next page) Data Sheet 7 of 1 Rev. 3.1, -6-
Reference Circuit (cont.) Component Information (cont.) Component Description Suggested Manufacturer P/N Input (cont.) R11, R82 Resistor, 1 W Panasonic Electronic Components ERJ-8GEYJ1V R12, R13, R14 Resistor, 1 W Panasonic Electronic Components ERJ-3GEYJ1V R15 Resistor, 5.1k W Panasonic Electronic Components ERJ-8GEYJ512V R81 Resistor, 1 W Panasonic Electronic Components ERJ-8GEYJ11V R83 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V R84 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ132V S1 Transistor Infineon Technologies BCP56-1 S2 Voltage regulator Fairchild Semiconductor LM785 S3 Potentiometer, 2k W Bourns Inc. 3224W-1-2E Output C1 Chip capacitor,.6 ATC ATC1AR6CW15XB C2, C4 Capacitor, 2.2 µf, 5 V Panasonic Electronic Components EEE-FP1V2AP C3, C6 Chip capacitor, 12 pf ATC ATC1A1JW15XB C5, C2 Capacitor, 1 µf Garrett Electronics 281M52K C7, C9 Capacitor, 1 µf Taiyo Yuden UMK325C7MM-T C8 Chip capacitor,.5 pf ATC ATC1AR5CW15XB C, C1 Chip capacitor, 1 µf TDK Corporation C4532X7R2A15M23KA C3, C4 Chip capacitor, 2.2 µf TDK Corporation C4532X7R1H225MKA Data Sheet 8 of 1 Rev. 3.1, -6-
H-34288G-4/2_sl_po_3_8-8-13 Package Outline Specifications Package H-34288G-4/2 D 45 x.64 [.25] 2X 3..72 [.855] C L 1.98 [.78] 2X 2.29 [.9] 4X 3.49±.51 [.138±.] V D V 9.78 [.385] C L C L 9.4 [.37].76±.51 [.66±.] 4X R.51 +.38 -.13 [ R.+.15 -.5 ] C L G 4.4 +.25 -.13 [.159+.1 -.5 ] SPH 1.57 [.62] 2X.75 [.699] 22.35±. [.88±.8] 1.2 [.4] S 23.11 [.91] Diagram Notes unless otherwise specified: Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-94. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.127 [.5]. 4. Pins: D drain, S source, G gate, V drain voltage (V DD ). 5. Lead thickness:.1 +.51/.25 [.4 +.2/.1]. 6. Gold plating thickness:.25 micron [1 microinch] max. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Data Sheet 9 of 1 Rev. 3.1, -6-
V1 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) 1 12-8-7 Advance all Proposed specification for new product development. 2 13-8-8 Production all Data Sheet reflects released product specifications 3 14-4-14 Production 2 Maximum junction temperature raised to 225 C. 3.1-6- Production 2 Updated ordering information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerrf@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 48 776 6 International Edition -6- Published by Infineon Technologies AG 85579 Neubiberg, Germany 12 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 1 of 1 Rev. 3.1, -6-