Technical Data Document Number: A2T27S2N Rev. 1, 1/218 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 4 to 27 MHz. Typical Single--Carrier W--CDMA Performance: V DD =28Vdc, I DQ = 185 ma, P out = 2.5 W Avg., Input Signal PAR = 9.9 db @.1% Probability on CCDF. (1) 18 MHz Frequency G ps (db) D (%) Output PAR (db) (dbc) IRL (db) A2T27S2NR1 A2T27S2GNR1 4 27 MHz, 2.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS 185 MHz 2.8 2.9 9.4 44.6 9 184 MHz 21.1 2.9 9.3 45.6 16 188 MHz 2.7 2.6 9.1 45.5 13 Typical Single--Carrier W--CDMA Performance: V DD =28Vdc, I DQ = 185 ma, P out = 2.5 W Avg., Input Signal PAR = 9.9 db @.1% Probability on CCDF. (1) 21 MHz TO - 27-2 PLASTIC A2T27S2NR1 Frequency G ps (db) D (%) Output PAR (db) (dbc) IRL (db) 211 MHz 19.5 2.1 9.3 46.4 1 214 MHz 19.8 19.8 9. 45. 13 217 MHz 19.7 2.1 8.9 44.9 11 TO -27G -2 PLASTIC A2T27S2GNR1 26 MHz Frequency G ps (db) D (%) Output PAR (db) (dbc) IRL (db) 2575 MHz 17.6 2.3 9.3 44.2 8 265 MHz 18.6 2.4 9. 41.3 1 2635 MHz 18. 2.1 8.6 4.7 6 RF in /V GS 1 2 RF out /V DS 1. All data measured in fixture with device soldered to heatsink. Features Greater negative gate--source voltage range for improved Class C operation Designed for digital predistortion error correction systems Universal broadband driver (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections 217--218 NXP B.V. 1
Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS.5, +65 Vdc Gate--Source Voltage V GS 6., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg 65 to +15 C Case Operating Temperature Range T C 4 to +15 C Operating Junction Temperature Range (1,2) T J 4 to 225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 71.8 C, 2.5 W CW, 28 Vdc, I DQ = 185 ma, 1842.5 MHz Table 3. ESD Protection Characteristics Test Methodology R JC 1.6 C/W Human Body Model (per JESD22--A114) 2 Charge Device Model (per JESD22--C11) Table 4. Moisture Sensitivity Level Class Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--2 3 26 C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit C3 Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =32Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (V DS =1Vdc,I D = 24.2 Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 185 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =1Vdc,I D = 242 madc) I DSS 1 Adc I DSS 1 Adc I GSS 1 Adc V GS(th).8 1.2 1.6 Vdc V GS(Q) 1.5 1.8 2.3 Vdc V DS(on).1.2 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/rf/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/rf and search for AN1955. (continued) 2
Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In NXP Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 185 ma, P out = 2.5 W Avg., f = 1842.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 db @.1% Probability on CCDF. measured in 3.84 MHz Channel Bandwidth @ 5 MHzOffset. Power Gain G ps 2. 21. 23. db Drain Efficiency D 19.4 2.8 % Output Peak--to--Average Ratio @.1% Probability on CCDF PAR 8.8 9.2 db Adjacent Channel Power Ratio 45.3 42. dbc Input Return Loss IRL 17 5 db Load Mismatch (In NXP Test Fixture, 5 ohm system) I DQ = 185 ma, f = 1842.5 MHz VSWR 1:1 at 32 Vdc, 28 W CW Output Power (3 db Input Overdrive from 2 W CW Rated Power) No Device Degradation Typical Performance (1) (In NXP Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 185 ma, 185 188 MHz Bandwidth P out @ 1 db Compression Point, CW P1dB 2 W AM/PM (Maximum value measured at the P3dB compression point across the 185 188 MHz frequency range.) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) 11 VBW res 1 MHz Gain Flatness in 75 MHz Bandwidth @ P out =2.5WAvg. G F.4 db Gain Variation over Temperature ( 3 C to+85 C) Output Power Variation over Temperature ( 3 C to+85 C) G.12 db/ C P1dB.3 db/ C Table 6. Ordering Information Device Tape and Reel Information Package A2T27S2NR1 TO--27--2 A2T27S2GNR1 R1 Suffix = 5 Units, 24 mm Tape Width, 13--inch Reel TO--27G--2 1. All data measured in fixture with device soldered to heatsink. 3
C9 V GS C12 C13 C1 C11 C6 C22 V DD C24 C1 C2 C3* C4 R1 R2 Q1 C7 C19 C2 C8 C23 C21 C5 D81327 C14 A2T27S2N Rev. C15 V GS C16 C17 C18 *C3 is mounted vertically. Note: All data measured in fixture with device soldered to heatsink. Figure 2. A2T27S2NR1 Test Circuit Component Layout 185 188 MHz Table 7. A2T27S2NR1 Test Circuit Component Designations and Values 185 188 MHz Part Description Part Number Manufacturer C1 1.8 pf Chip Capacitor ATC6F1R8BT25XT ATC C2 1 pf Chip Capacitor ATC1B1RBT5XT ATC C3, C7 3 pf Chip Capacitor ATC1B3RCT5XT ATC C4, C5 2 pf Chip Capacitor ATC1B2RBT5XT ATC C6 6.8 pf Chip Capacitor ATC6F6R8BT25XT ATC C8 2.4 pf Chip Capacitor ATC6F2R4BT25XT ATC C9, C16 22 F, 35 V Tantalum Capacitor T491X226K35AT Kemet C1, C14, C21 2.2 F Chip Capacitor C1825C225J5RACTU Kemet C11, C15, C23.1 F Chip Capacitor CDR33BX14AKWS AVX C12, C17, C22 22 nf Chip Capacitor C1812C224K5RACTU Kemet C13, C18, C2 2.2 F Chip Capacitor C3225X7R1H225K25AB TDK C19 6.8 pf Chip Capacitor ATC1B6R8CT5XT ATC C24 47 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor A2T27S2N NXP R1, R2 2.2, 1/4 W Chip Resistor CRCW1262R2JNEA Vishay PCB Rogers RO435B,.2, r =3.66 D81327 Rogers 4
G ps, POWER GAIN (db) TYPICAL CHARACTERISTICS 185 188 MHz 21.6 21.4 21.2 21. 2.8 2.6 2.4 2.2 2. 19.8 19.6 176 D V DD =28Vdc,P out =2.5W(Avg.),I DQ = 185 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth G ps Input Signal PAR = 9.9 db @.1% Probability on CCDF PARC 45.5 46. IRL 46.5 178 18 182 184 186 188 19 192 f, FREQUENCY (MHz) 22. 21.5 21. 2.5 2. 44. 44.5 45. D, DRAIN EFFICIENCY (%) Figure 3. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband Performance @ P out = 2.5 Watts Avg. (dbc) 3 6 9 12 15 18 IRL, INPUT RETURN LOSS (db).2.4.6.8 1 PARC (db) IMD, INTERMODULATION DISTORTION (dbc) 1 2 3 4 5 V DD =28Vdc,P out = 8 W (PEP), I DQ = 185 ma Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 184 MHz IM7--U IM5--U IM5--L IM3--U IM3--L IM7--L 6 1 1 1 2 TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two -Tone Spacing G ps, POWER GAIN (db) 21.2 21.1 21. 2.9 2.8 2.7 OUTPUT COMPRESSION AT.1% PROBABILITY ON CCDF (db) 1 1 2 3 4 V DD =28Vdc,I DQ = 185 ma, f = 184 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth PARC 1 db = 2.9 W 2 db = 4. W 3 db = 5.5 W D G ps 6 5 4 3 2 1 D DRAIN EFFICIENCY (%) 25 3 35 4 45 5 (dbc) 2.6 Input Signal PAR = 9.9 db @.1% Probability on CCDF 5 2 3 4 5 6 7 55 P out, OUTPUT POWER (WATTS) Figure 5. Output Peak -to -Average Ratio Compression (PARC) versus Output Power 5
G ps, POWER GAIN (db) 23 22 21 2 19 18 V DD =28Vdc,I DQ = 185 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 185 MHz 185 MHz 17 1 D 184 MHz 188 MHz 188 MHz 1 Input Signal PAR = 9.9 db G @.1% Probability on CCDF ps 1 5 P out, OUTPUT POWER (WATTS) AVG. 184 MHz 184 MHz 188 MHz 185 MHz Figure 6. Single -Carrier W -CDMA Power Gain, Drain Efficiency and versus Output Power 6 5 4 3 2 D, DRAIN EFFICIENCY (%) 1 2 3 4 5 6 (dbc) 27 24 21 V DD =28Vdc P in =dbm I DQ = 185 ma Gain 1 5 GAIN (db) 18 5 IRL (db) 15 1 12 15 IRL 9 2 13 145 16 175 19 25 22 235 25 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response 6
C5 V GS C7 C8 C9 C6 C1 C19 V DD C21 C16 C17 C2 C1 R1 C18 C2 R2 Q1 C3* C4 D81327 C14 A2T27S2N Rev. C15 V GS C13 C12 C11 *C3 is mounted vertically. Note: All data measured in fixture with device soldered to heatsink. Figure 8. A2T27S2NR1 Test Circuit Component Layout 211 217 MHz Table 8. A2T27S2NR1 Test Circuit Component Designations and Values 211 217 MHz Part Description Part Number Manufacturer C1 1.8 pf Chip Capacitor ATC6F1R8BT25XT ATC C2 4.3 pf Chip Capacitor ATC1B4R3CT5XT ATC C3 2.7 pf Chip Capacitor ATC1B2R7BT5XT ATC C4 2.4 pf Chip Capacitor ATC6F2R4BT25XT ATC C5, C13 22 F, 35 V Tantalum Capacitor T491X226K35AT Kemet C6, C14, C18 2.2 F Chip Capacitor C1825C225J5RACTU Kemet C7, C15, C2.1 F Chip Capacitor CDR33BX14AKWS AVX C8, C12, C19 22 nf Chip Capacitor C1812C224K5RACTU Kemet C9,C11,C17 2.2 F Chip Capacitor C3225X7R1H225K25AB TDK C1, C16 6.8 pf Chip Capacitor ATC1B6R8CT5XT ATC C21 47 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor A2T27S2N NXP R1, R2 2.2, 1/4 W Chip Resistor CRCW1262R2JNEA Vishay PCB Rogers RO435B,.2, r =3.66 D81327 Rogers 7
TYPICAL CHARACTERISTICS 211 217 MHz G ps, POWER GAIN (db) 21 2.5 2 19.5 19 18.5 18 17.5 17 16.5 16 26 V DD =28Vdc,P out =2.5W(Avg.),I DQ = 185 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth G ps Input Signal PAR = 9.9 db @.1% Probability on CCDF PARC D 22 21 2 19 43 46 IRL 47 48 28 21 212 214 216 218 22 222 f, FREQUENCY (MHz) 18 44 45 D, DRAIN EFFICIENCY (%) Figure 9. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband Performance @ P out = 2.5 Watts Avg. (dbc) 4 6 8 1 12 14 IRL, INPUT RETURN LOSS (db).5 1 1.5 2 2.5 PARC (db) G ps, POWER GAIN (db) 21 2 19 18 17 16 V DD =28Vdc,I DQ = 185 ma, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth G 214 MHz ps 217 MHz D 211 MHz 214 MHz 211 MHz 217 MHz 217 MHz 214 MHz 211 MHz Input Signal PAR = 9.9 db @.1% Probability on CCDF 15.3 1 1 3 P out, OUTPUT POWER (WATTS) Figure 1. Single -Carrier W -CDMA Power Gain, Drain Efficiency and versus Output Power 6 5 4 3 2 1 D DRAIN EFFICIENCY (%) 1 2 3 4 5 6 (dbc) 24 22 V DD =28Vdc P in =dbm I DQ = 185 ma 1 5 GAIN (db) 2 18 16 Gain 5 1 IRL (db) 14 IRL 15 12 2 28 21 212 214 216 218 22 222 224 f, FREQUENCY (MHz) Figure 11. Broadband Frequency Response 8
C11 V GS C14 C15 C12 C13 C24 V DD C26 C1 C2* C3 C4 R1 R2 C5 Q1 C25 C21 C22 C23 C6 C9 C7 C8 C1 D916 C16 C17 A2T27S2N 2.6GHz Rev. V GS C18 C19 C2 *C2 is mounted vertically. Note: All data measured in fixture with device soldered to heatsink. Figure 12. A2T27S2NR1 Test Circuit Component Layout 2575 2635 MHz Table 9. A2T27S2NR1 Test Circuit Component Designations and Values 2575 2635 MHz Part Description Part Number Manufacturer C1 7.5 pf Chip Capacitor ATC6F7R5BT25XT ATC C2 1 pf Chip Capacitor ATC1B1RBT5XT ATC C3 2.4 pf Chip Capacitor ATC6S2R4BT25XT ATC C4, C5, C7 1.5 pf Chip Capacitor ATC1B1R5BT5XT ATC C6 2.2 pf Chip Capacitor ATC6F2R2BT25XT ATC C8.75 pf Chip Capacitor GQM2195C2ER75BB12D Murata C9 6.8 pf Chip Capacitor ATC6F6R8BT25XT ATC C1 1.2 pf Chip Capacitor ATC6F1R2BT25XT ATC C11, C18 22 F, 35 V Tantalum Capacitor T491X226K35AT Kemet C12, C16, C23 2.2 F Chip Capacitor C1825C225J5RAC-TV Kemet C13, C17, C25.1 F Chip Capacitor CDR33BX14AKWS AVX C14, C19, C24 22 nf Chip Capacitor C1812C224K5RAC-TV Kemet C15, C2, C22 2.2 F Chip Capacitor C3225X7R1H225K TDK C21 6.8 pf Chip Capacitor ATC1B6R8CT5XT ATC C26 47 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor A2T27S2N NXP R1, R2 2.2, 1/4 W Chip Resistor CRCW1262R2JNEA Vishay PCB Rogers RO435B,.2, r =3.66 D916 MTL 9
G ps, POWER GAIN (db) TYPICAL CHARACTERISTICS 2575 2635 MHz 19 18.8 18.6 18.4 18.2 18 17.8 17.6 17.4 17.2 17 2565 V DD =28Vdc,P out =2.5W(Avg.),I DQ = 185 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth G ps 21.5 21 2.5 2 19.5 36 38 4 42 PARC 44 Input Signal PAR = 9.9 db @.1% Probability on CCDF 46 2575 2585 2595 265 2615 2625 2635 2645 IRL f, FREQUENCY (MHz) D, DRAIN EFFICIENCY (%) Figure 13. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband Performance @ P out = 2.5 Watts Avg. D (dbc) 5 1 15 2 25 IRL, INPUT RETURN LOSS (db).4.6.8 1 1.2 1.4 PARC (db) a G ps, POWER GAIN (db) 22 2 18 16 14 12 1.8 V DD =28Vdc,I DQ = 185 ma, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 1 G ps 265 MHz 2575 MHz 2635 MHz 2575 MHz 2635 MHz 265 MHz 2575 MHz D 265 MHz 2635 MHz Input Signal PAR = 9.9 db @.1% Probability on CCDF 1 3 6 5 4 3 2 1 D DRAIN EFFICIENCY (%) 5 5 15 25 35 45 55 (dbc) P out, OUTPUT POWER (WATTS) Figure 14. Single -Carrier W -CDMA Power Gain, Drain Efficiency and versus Output Power 22 2 V DD =28Vdc P in =dbm I DQ = 185 ma 1 5 18 Gain GAIN (db) 16 5 IRL (db) 14 1 12 IRL 15 1 2 252 254 256 258 26 262 264 266 268 f, FREQUENCY (MHz) Figure 15. Broadband Frequency Response 1
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN197: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator.s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description Mar. 217 Initial release of data sheet 1 Jan. 218 Frequency band performance tables, 21 and 26 MHz: data values updated to reflect true capability of the device, p. 1 185--188 MHz, 211--217 MHz and 2575--2635 MHz performance data tables and circuit component layouts: updated to show all data measured in fixture with device soldered to heatsink, pp. 1, 3, 4, 7, 9 211--217 MHz Typical Characteristic performance graphs: performance graphs added to data sheet, p. 8 2575--2635 MHz Typical Characteristic performance graphs: performance graphs added to data sheet, p. 1 17
How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/salestermsandconditions. NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 217--218 NXP B.V. Document Number: A2T27S2N 18 Rev. 1, 1/218