V WM =5V,.8pF ESD Protection Array FEATURES Meet IEC61-4-2(ESD) ±17kV(air), ±12kV(contact) Working Voltage: 5V Compliant to RoHS directive 211/65/EU and in accordance to WEEE 22/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS USB 2. / 3. / 3.1 High Definition Multi-Media Interface(HDMI 1.3 /1.4 / 2.) KEY PARAMETERS PARAMETER VALUE UNIT P PPSM 95 W I PP 5 A V WM 5 V V (BR) at I R = 1 ma 6 V V C at I PP = 5 A 19 V Package 251P1 Configuration Single dice MECHANICAL DATA Case: 251P1 Molding compound meets UL 94 V- flammability rating Moisture sensitivity level: level 1, per J-STD-2 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-2 Meet JESD 21 class 1A whisker test Polarity: As marked Weight: 3.59 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL TESD5VV4UA UNIT Marking code on the device 24A Rated random recurring peak Impulse power dissipation (tp=8/2μs waveform) P PPSM 95 W Peak impulse current (tp=8/2μs waveform) I PP 5 A ESD per IEC 61-4-2 (Air) ESD per IEC 61-4-2 (Contact) Junction temperature range T J -55 to +125 C Storage temperature range T STG -55 to +125 C V ESD ±17 ±12 kv 1 Version:A175
ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Forward voltage per diode (1) I R = 1 ma V (BR) 6 - - V Rated working standoff voltage V WM - - 5 V Reverse current (1) Clamping voltage (2) Clamping voltage (2) Junction capacitance Junction capacitance Notes: 1. Pulse test with PW=3 ms 2. tp=8/2μs waveform V R = 5 V I PP = 1 A I PP = 5 A 1 MHz, V R = V 1 MHz, V R = V (between I/O pins ) I R - - 1 µa V C - - 15 V V C - - 19 V C J - -.8 pf C J - -.4 pf ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING TESD5VV4UA (Note 1) RD G 251P1 3K / 7" Reel Notes: 1. Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE PACKING CODE SUFFIX DESCRIPTION TESD5VV4UA RDG TESD5VV4UA RD G Green compound 2 Version:A175
TLP Current(A) Junction Capacitance CJ(pF) Peak Impulse Current IPP(%) Peak Impulse Current IPP(%) TESD5VV4UA CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Fig. 1 8/2μs pulse waveform Fig. 2 ESD pulse waveform according to IEC 61-4-5 according to IEC 61-4-2 12 11 1% Ipp ; 8 μs 1 9 8 e -t 5% Ipp ; 2 μs 8 7 6 5 4 4 3 2 1 2 3 4 t (μs) 1-1 1 3 5 7 t r =.7ns to 1ns t(ns) Fig. 3 TLP I-V Curve Fig. 4 Typical Junction Capacitance..8-2. -4..6-6..4-8. -1..2-12. -14. -25-2 -15-1 -5 TLP Volts(V) 1 2 3 4 5 Reverse Voltage (V) 3 Version:A175
Junction Capacitance CJ(pF) TESD5VV4UA CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted).6 Fig. 5 Typical Junction Capacitance (between I/O pins ).4.2 1 2 3 4 5 Reverse Voltage (V) 4 Version:A175
PACKAGE OUTLINE DIMENSION 251P1 DIM. Unit (mm) Unit (inch) Min Max Min Max A.5.65.2.26 A1..5..2 A2.13.5 b.15.25.6.1 b1.35.45.14.18 D 2.4 2.6.94.12 E.9 1.1.35.43 e.5.2 L.3.425.12.17 SUGGESTED PAD LAYOUT DIM. Unit (mm) Unit (inch) Typ. Typ. A 1..39 B.5.2 C.2.8 D.875.34 E.675.27 F 1.55.61 G.4.16 H.2.8 5 Version:A175
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