TLP8 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP8 Office Machine Programmable Controllers AC / DC Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP8 is a small outline coupler, suitable for surface mount assembly. TLP8 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. Collector emitter voltage: 8V (min.) Current transfer ratio: % (min.) Rank GB: % (min.) Isolation voltage: 7Vrms (min.) UL recognized: UL77, file no. E6749 Option (V4) type VDE approved: EN 6747--2 satisfied Maximum operating insulation voltage: 6VPK Highest permissible over voltage: 6VPK BSI approved: BS EN66:22, certificate no.828 BS EN69-:22, certificate no.8286 TOSHIBA Weight:.9 g 4C Pin Configuration (top view) 6 4 : Anode : Cathode 4: Emitter 6: Collector 27--
TLP8 Current Transfer Ratio Current Transfer Ratio (%) (I C / I F ) Type Classification * I F = ma, V CE = V, Marking Of Classification Min. Max. (None) 6 BLANK, Y, Y, G, G, B, B, GB Rank Y Y, Y TLP8 Rank GR G, G Rank BL 2 6 B, B Rank GB 6 G, G, B, B, GB *: EX, Rank GB: TLP8 (GB) (Note) Application, type name for certification test, please use standard product type name, i, e. TLP8 (GB): TLP8 2 27--
TLP8 Absolute Maximum Ratings () LED Detector Characteristic Symbol Rating Unit Forward current I F ma Forward current detating ΔI F / C.7 (Ta C) ma / C Pulse forward current (μs pulse, pps) I FP A Reverse voltage V R V Junction temperature T j 2 C Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V Collector current I C ma Collector power dissipation ( Circuit) Collector power dissipation derating ( Circuit Ta 2 C) P C mw ΔP C / C. mw / C Junction temperature T j 2 C Storage temperature range T stg ~2 C Operating temperature range T opr ~ C Lead soldering temperature T sol 26 (s) C Total package power dissipation P T 2 mw Total package power dissipation derating (Ta 2 C) Isolation voltage (AC, min., R.H. 6%) (Note ) ΔP T / C 2. mw / C BV S 7 V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note ) Device considered a two terminal device: Pin, shorted together and pins 4, 6 shorted together Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC 48 V Forward current I F 6 2 ma Collector current I C ma Operating temperature T opr 2 8 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 27--
TLP8 Individual Electrical Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ma... V LED Reverse current I R V R = V μa Capacitance C T V =, f = MHz pf Detector Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current Capacitance (collector to emitter) V (BR) CEO I C =. ma 8 V V (BR) ECO I E =. ma 7 V I CEO V CE = 48 V, ( Ambient light below lx) V CE = 48 V, Ta = 8 C, ( Ambient light below lx). (2) 2 (4). () () C CE V =, f = MHz pf μa μa Coupled Electrical Characteristics () Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio I C / I F I F = ma, V CE = V Rank GB Saturated CTR I C / I F (sat) IF = ma, V CE =.4 V Rank GB 6 6 6 % % Collector emitter saturation voltage V CE (sat) I C = 2.4 ma, I F = 8 ma.4 IC =.2 ma, I F = ma Rank GB.2.4 V Off state collector current I C (off) V F =.7V, V CE = 48 V μa Isolation Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) C S V S = V, f = MHz.8 pf Isolation resistance R S V S = V, R.H. 6% 2 4 Ω Isolation voltage BV S AC, minute 7 AC, second, in oil V rms DC, minute, in oil V dc 4 27--
TLP8 Switching Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r 2 Fall time t f V CC = V, I C = 2 ma Turn on time t on R L = Ω Turn off time t off Turn on time t ON 2 Storage time t s R L =.9 kω (Fig.) V CC = V, I F = 6 ma 2 Turn off time t OFF 4 μs μs Fig. Switching time test circuit I F R L V CC I F t S V CE V CE t ON t OFF 4.V.V 27--
TLP8 I F Ta P C Ta 2 Allowable forward current IF (ma) 8 6 4 2 Allowable collector power dissipation PC (mw) 6 2 8 4 2 2 4 6 8 2 2 2 4 6 8 2 Pulse forward current IFP (ma) I FP D R Pulse width μs 2 Duty cycle ratio D R Forward current IF (ma)... 8 C 2 C I F V F 2 C.4.8.2.6 2 Forward voltage V F (V) ΔV F / ΔTa I F I FP V FP.2 Forward voltage temperature coefficient ΔVF / ΔTa (mv / C) 2.8 2.4 2..6.2.8.4... Pulse forward current IFP (ma).6 Pulse width μs Repetitive frequency = Hz..4.8 2.2 2.6. Forward current I F (ma) Pulse forward voltage V FP (V) 6 27--
TLP8 Collector current IC (ma) 4 2 I C V CE ma ma 2mA ma ma IF = ma PC (MAX.) Collector current IC (ma) 2 I C V CE ma 4mA ma 2mA ma ma 2mA 2 4 6 8 Collector-emitter voltage V CE (V).2.4.6.8. Collector-emitter voltage V CE (V) I C I F I CEO Ta Collector current IC (ma).... Sample A Sample B VCE = V VCE = V VCE =.4V.. Collector dark current ID(I CEO ) (μa) 2 VCE = 48V 24V V V Forward current I F (ma) 4 2 4 6 8 I C / I F I F Current transfer ratio IC / IF (%) Sample A Sample B VCE =.4V... Forward current I F (ma) VCE = V VCE = V 7 27--
TLP8 Collector-emitter saturation voltage VCE(sat) (V).24.2.6.2.8.4 V CE(sat) Ta IF = ma IC =.2mA Collector current IC (ma) I C Ta IF = 2mA ma ma VCE = V 4 2 2 4 6 8 ma..ma. Switching Time R L IF = 6mA VCC = V. 2 2 4 6 8 toff 6 Switching Time Ta toff ts Switching time (μs) ts Switching time (μs) ton ton... IF = 6mA VCC = V RL =.9kΩ 2 2 4 6 8 Load resistance R L (kω) 8 27--
TLP8 RESTRICTIONS ON PRODUCT USE 277-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 27--