2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)

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Transcription:

TOSHIBA Transistor Silicon NPN Epitaxial Type SC633 HighSpeed Swtching Applications DCDC Converter Applications Storobe Flash Applications High DC current gain: hfe = to 4 (IC =.3 A) Low collectoremitter saturation: VCE (sat) =.8 V (max) Highspeed switching: tf = 38 ns (typ.) TSM.9±..9±..9.9 +..8.3 +..6. Unit : mm 3.4±. Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Collectorbase voltage V CBO V.7±. ~...6±. Collectoremitter voltage V CEX 8 V V CEO V Emitterbase voltage V EBO 6 V Collector current DC I C. Pulse I CP Base current I B.3 A Collector power dissipation t = s Pc (Note ). DC.6 A W. Base. Emitter 3. Collector JEDEC JEITA TOSHIBA 3SA Weight:.g (Typ.) Junction temperature T j C Storage temperature range T stg to C Note : Mounted on an FR4 board (glass epoxy,.6mm thick, Cu area: 64. mm ) 47

Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cutoff current I CBO V CB = V, I E =. μa Emitter cutoff current I EBO V EB = 6 V, I C =. μa Collectoremitter breakdown voltage V (BR) CEO I C = ma, I B = V DC current gain h FE () V CE = V, I C =.3 A 4 h FE () V CE = V, I C =. A Collectoremitter saturation voltage V CE (sat) I C =. A, I B = 33 ma.8 V Baseemitter saturation voltage V BE (sat) I C =. A, I B = 33 ma. V Collector output capacitance C ob V CB = V, I E =, f = MHz 8 pf Rise time t r See Figure. Switching time Storage time t stg V CC V, R L = Ω 47 ns Fall time t f I B = I B = 33 ma 38 µs V CC I B I B Input RL Output I B Duty cycle < % I B Figure Switching Time Test Circuit & Timing Chart Marking Part No. (or abbreviation code) W X Lot code (year) Dot: even year No dot: odd year Lot code (month) 47

3. Ta=..... I C V CE 3 4 Collectoremitter voltage 4 V CE (V) 3 IB = ma DC current gain hfe Ta = C VCE = V h FE I C... Collectoremitter saturation voltage VCE (sat) (V). β= 3 V CE (sat) I C Ta = C Baseemitter saturation voltage VBE (sat) (V) β= 3 V BE (sat) I C Ta = C............. I C V BE VCE = V Ta = C..4.6.8.. Baseemitter voltage V BE (V) 3 47

r th t w Transient thermal resistance rth ( C/W) Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = C Mounted on an FR4 board (glass epoxy,.6 mm thick, Cu area: 64 mm )... Pulse width tw (s) Safe Operating Area IC max (Pulse)* ms* ms* µs* µs* IC max (Continuous)* ms* DC operation Ta = C s* *: Single nonrepetitive pulse Ta = C Note that the curves for ms,. s and DC operation will be different when the devices aren t mounted on an FR4 board (glass epoxy,.6 mm thick, Cu area: 64 mm ). Singledevice operation These characteristic curves must be derated linearly with increase in temperature. VCEO max.. Collectoremitter voltage V CE (V) 4 47

RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 369EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 47