FDA69N25 N-Channel UniFET TM MOSFET 250 V, 69 A, 41 mω Features R DS(on) = 34 mω (Typ.) @ = 10 V, = 34.5 A Low Gate Charge (Typ. 77 nc) Low C rss (Typ. 84 pf) Applications PDP TV Uninterruptible Power Supply AC-DC Power Supply Description November 2013 UniFET TM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-3PN Absolute Maximum Ratings T C = 25 C unless otherwise noted. S Symbol Parameter FDA69N25 Unit S Drain-Source Voltage 250 V (Avalanche) Repetitive Avalanche Voltage (Note 1, 2) 300 V Drain Current - Continuous (T C = 25 C) 69 A - Continuous (T C = 100 C) 44.2 A M Drain Current - Pulsed (Note 1) 276 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 1894 mj I AR Avalanche Current (Note 1) 69 A E AR Repetitive Avalanche Energy (Note 1) 48 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) 480 W - Derate above 25 C 3.84 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter FDA69N25 Unit R θjc Thermal Resistance, Junction-to-Case, Max. 0.26 C/W R θja Thermal Resistance, Junction-to-Ambient, Max. 40 1
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDA69N25 FDA69N25 TO-3PN Tube N/A N/A 30 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa 250 -- -- V ΔBS / ΔT J Breakdown Voltage Temperature Coefficient = 250 μa, Referenced to 25 C -- 0.25 -- V/ C SS Zero Gate Voltage Drain Current = 250 V, = 0 V -- -- 1 μa = 200 V, T C = 125 C -- -- 10 μa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 μa 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance = 10 V, = 34.5 A -- 0.034 0.041 Ω g FS Forward Transconductance = 40 V, = 34.5 A -- 25 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 3570 4640 pf C oss Output Capacitance f = 1 MHz -- 750 980 pf C rss Reverse Transfer Capacitance -- 84 130 pf Switching Characteristics t d(on) t r Turn-On Delay Time Turn-On Rise Time = 125 V, = 69 A, = 10 V, R G = 25 Ω -- -- 95 855 200 1720 ns ns t d(off) Turn-Off Delay Time -- 130 270 ns (Note 4) t f Turn-Off Fall Time -- 220 450 ns Q g Total Gate Charge = 200 V, = 69 A, -- 77 100 nc Q gs Gate-Source Charge = 10 V -- 24 -- nc Q gd Gate-Drain Charge (Note 4) -- 37 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 69 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 69 A, -- 210 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/μs -- 5.7 -- μc Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.64 mh, I AS = 69 A, = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 69 A, di/dt 200 A/μs, BS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10-1 10 1, Drain-Source Voltage [V] 1. 250μs Pulse Test 2. T C = 25 C Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 2. Transfer Characteristics 10 2 10 1 25 C 150 C -55 C 1. = 40V 2. 250μs Pulse Test 2 4 6 8 10 12, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.10 R DS(ON) [Ω], Drain-Source On-Resistance 0.08 = 10V 0.06 = 20V 0.04 * Note : T J = 25 C 0 25 50 75 100 125 150 175 200 R, Reverse Drain Current [A] 10 2 10 1 150 C 25 C 1. = 0V 2. 250μs Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 9000 C iss = C gs + C gd (C ds = shorted) 12 Capacitances [pf] 6000 3000 C oss C iss C rss C oss = C ds + C gd C rss = C gd * Note ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 10 8 6 4 2 = 50V = 125V = 200V * Note : = 69A 0 10-1 10 1, Drain-Source Voltage [V] 0 0 10 20 30 40 50 60 70 80 Q G, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. = 250μA 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ C] Figure 8. On-Resistance Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 34.5 A 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 3 80 10 2 10 1 10-1 Operation in This Area is Limited by R DS(on) 100 μs 1ms 100ms 10ms DC 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 μs 70 60 50 40 30 20 10 10-2 10 1 10 2, Drain-SourceVoltage[V] 0 25 50 75 100 125 150 T C, Case Temperature [ o C] Figure 11. Transient Thermal Response Curve Z θjc Z (t),? JC (t), Thermal Thermal Response Response [ o C/W] 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse P DM t 1 t 2 1. Z θjc (t) = 0.26 0 C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) 10-5 10-4 10-3 10-2 10-1 10 1 t 1, Square Wave Pulse Duration [sec] 4
12V 200nF I G = const. 3mA 50KΩ Same Type as DUT 300nF V GS 10V Q g Q gs Q gd DUT Charge Figure 12. Gate Charge Test Circuit & Waveform R L 90% R G V 10 DUT 10% t d(on) t r t d(off) tf t on t off Figure 13. Resistive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS - BS I AS R G (t) V 10 DUT (t) t p Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms t p Time 5
R G DUT I SD Driver + _ Same Type as DUT L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6
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