N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-2 D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information SM3116NA Assembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3116NA U : SM3116NA XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 15 C T STG Storage Temperature Range -55 to 15 C I S Diode Continuous Forward Current 2 A I DP I D a P D Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation T C =25 C 14 T C = C 9 T C =25 C 6* T C = C 48 T C =25 C 5 T C = C 2 R qjc Thermal Resistance-Junction to Case Steady State 2.5 C/W R qja c I AS b E AS b Thermal Resistance-Junction to Ambient t s 2 Steady State 6 Avalanche Current, Single pulse L=.5mH 2 A Avalanche Energy, Single pulse L=.5mH mj Note a:* Current is limited by bond wire. Note b:uis tested and pulse width are limited by maximum junction temperature 15 o C (initial temperature Tj=25 o C). Note c:surface Mounted on 1in 2 pad area, t =999sec. V A A W C/W 2
Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25mA 3 - - V BV DSSt I DSS Drain-Source Breakdown Voltage (transient) Zero Gate Voltage Drain Current V GS =V, I D(aval) =2A T case =25 C, t transient =ns 34 - - V V DS =24V, V GS =V - - 1 T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25mA 1.5 1.8 2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± na R DS(ON) d Drain-Source On-state Resistance V GS =V, I DS =4A - 4.7 5.7 T J =125 C - 6.9 - V GS =4.5V, I DS =2A - 7 9 Gfs Forward Transconductance V DS =5V, I DS =4A - 95 - S Diode Characteristics V SD d t rr Diode Forward Voltage I SD =2A, V GS =V -.8 1.1 V Reverse Recovery Time - 21 - t a Charge Time - 13.2 - I DS =4A, dl SD /dt=a/ms t b Discharge Time - 7.8 - Q rr Reverse Recovery Charge - 17 - nc Dynamic Characteristics e R G Gate Resistance V GS =V,V DS =V,F=1MHz - 3 4.5 W C iss Input Capacitance V GS =V, 12 15 182 C oss Output Capacitance V DS =15V, 2 26 3 C rss Reverse Transfer Capacitance Frequency=1.MHz 13 175 t d(on) Turn-on Delay Time - 15 28 t r Turn-on Rise Time V DD =15V, R L =15W, - 13 24 I DS =1A, V GEN =V, t d(off) Turn-off Delay Time R G =6W - 32 57 t f Turn-off Fall Time - 9 17 Gate Charge Characteristics e Q g Q g Total Gate Charge Total Gate Charge V DS =15V, V GS =4.5V, I DS =4A - 12 17-25 37 Q gth Threshold Gate Charge V DS =15V, V GS =V, - 1.5 - Q gs Gate-Source Charge I DS =4A - 3 - Q gd Gate-Drain Charge - 7.5 - Note d:pulse test ; pulse width 3ms, duty cycle 2%. Note e:guaranteed by design, not subject to production testing. ma mw ns pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 6 7 5 6 Ptot - Power (W) 4 3 2 ID - Drain Current (A) 5 4 3 2 T C =25 o C 2 4 6 8 12 14 16 T C =25 o C,V G =V 2 4 6 8 12 14 16 Tj - Junction Temperature ( C) Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 4 Rds(on) Limit 1ms ms ms 1s DC 1 T C =25 O C.1.1.1 1 VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 2 1.1.1.1.2 Single Pulse.5.1.2 Duty =.5 Mounted on 1in 2 pad R qja :6 o C/W 1E-3 1E-4 1E-3.1.1 1 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 14 14 12 V GS = 4.5,5,6,7,8,9,V 12 ID - Drain Current (A) 8 6 4 2 4V 3.5V 3V RDS(ON) - On - Resistance (mw) 8 6 4 2 V GS =4.5V V GS =V..5 1. 1.5 2. 2.5 3. VDS - Drain - Source Voltage (V) 2 4 6 8 12 14 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 24 21 I DS =4A 1.6 1.4 I DS =25mA RDS(ON) - On - Resistance (mw) 18 15 12 9 6 3 Normalized Threshold Voltage 1.2 1..8.6.4 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 125 15 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2. 1.8 V GS = V I DS = 4A Normalized On Resistance 1.6 1.4 1.2 1..8.6 IS - Source Current (A) 1 T j =15 o C T j =25 o C.4 R ON @T j =25 o C: 4.8mW.2-5 -25 25 5 75 125 15 Tj - Junction Temperature ( C).1..2.4.6.8 1. 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 2 18 Frequency=1MHz 9 V DS = 15V I DS = 4A C - Capacitance (pf) 16 14 12 8 6 4 2 Crss Coss Ciss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 5 15 2 25 3 VDS - Drain-Source Voltage (V) 5 15 2 25 QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IAS tp IL.1W VDD EAS tav Switching Time Test Circuit and Waveforms VDS DUT RD VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 7
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Classification Profile 9
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness 183 C 6-15 seconds Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, A8 Hrs, % of VGS max @ Tjmax PCT JESD-22, A2 168 Hrs, %RH, 2atm, 121 C TCT JESD-22, A4 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56358