Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. Features For high voltage applications V CE < 2 V Maximal power P tot = 7 mw Transition frequency f T = 7.5 GHz Noise figure NF min =.3 db at 9 MHz Easy to use Pb-free (RoHS compliant) and halogen-free industry standard SOT343 package with visible leads 2 3 Application GNSS active antenna Amplifiers in antenna and telecommunications systems CATV Power amplifier for DECT and PCN systems Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2/22 Device information, 4 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Type / Ordering code Package Pin configuration Marking Related Links BFP96WN / BFP96WNH6327XTSA SOT343 =E 2=C 3=B 4=E RLs see SOT343 Package Preliminary datasheet Please read the Important Notice and Warnings at the end of this document Revision. www.infineon.com
Table of contents Table of contents Product description.................................................................... Features............................................................................... Application............................................................................. Product validation...................................................................... Device information..................................................................... Table of contents....................................................................... 2 Absolute maximum ratings..............................................................3 2 Thermal characteristics................................................................. 4 3.................................................... 5 3. DC parameter table...................................................................... 5 3.2 AC parameter tables..................................................................... 5 3.3 Characteristic DC diagrams............................................................... 8 3.4 Characteristic AC diagrams.............................................................. 4 SOT343 Package....................................................................... 7 Revision history....................................................................... 8 Trademarks........................................................................... 9 Preliminary datasheet 2 Revision.
Absolute maximum ratings Absolute maximum ratings Table Absolute maximum ratings at T A = 25 C (unless otherwise specified) Parameter Symbol Values Unit Note or Test condition Min. Max. Collector emitter voltage V CEO 2 V Base open Collector emitter voltage V CES 2 V Emitter / base short circuited Collector base voltage V CBO 2 V Emitter open Emitter base voltage V EBO 2 V Collector open DC collector current I C 5 ma DC base current 5 ma Total power P tot 7 mw Junction temperature T J 5 C Storage temperature T Stg -55 5 C Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. Preliminary datasheet 3 Revision.
Thermal characteristics 2 Thermal characteristics Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Junction - soldering point R thjs 5 K/W ) Figure Absolute maximum power dissipation P tot vs. T s Note: In the horizontal part of the above curve the junction temperature T J is lower than T J,max. In the declining slope it is T J = T J,max. P tot has to be reduced according to the curve in order not to exceed T J,max. It is T J,max = T S + P tot * R THJS. For the definition of R thjs please refer to the application note AN77 Preliminary datasheet 4 Revision.
3 3. DC parameter table Table 3 DC characteristics at T A = 25 C Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Collector emitter breakdown voltage V CEO 2 V I C = ma, open base Collector emitter leakage current I CES μa V CE = 2 V, V BE = V Emitter / base short circuited Collector base leakage current I CBO na V CB = V, V BE = Open emitter Emitter base leakage current I EBO μa V EB = V, I C = Open collector DC current gain h FE 7 4 V CE = 8 V, I C = 5 ma Pulse measured 3.2 AC parameter tables Table 4 General AC characteristics at T A = 25 C Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Transition frequency f T 5 7.5 GHz V CE = 8 V, I C = 9 ma, f=5 MHz Collector base capacitance C CB.9 pf V CB = V, V BE = V, f = MHz Emitter grounded Collector emitter capacitance C CE.35 pf V CE = V, V BE = V, f = MHz Base grounded Emitter base capacitance C EB 3.8 pf V EB =.5 V, V CB = V, f = MHz Collector grounded Preliminary datasheet 5 Revision.
Measurement setup for the AC characteristics shown in the following tables is a test fixture with Bias T s in a 5 Ω system, T A = 25 C. VBE VCE RFIN Bias-T 3 2 Bias-T RFOUT 4 GND Figure 2 BFP96WN testing circuit Table 5 AC characteristics, V CE = 8 V, f =.45 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max. 23.5 9. db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin.95 db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP3 9 32 dbm I C = 5 ma Table 6 AC characteristics, V CE = 8 V, f =.9 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max. 7. 3. db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin. db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP3 9 32 dbm I C = 5 ma Preliminary datasheet 6 Revision.
Table 7 AC characteristics, V CE = 8 V, f =.5 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max. 2.5 8.5 db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin.7 db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP3 9 32 dbm I C = 5 ma Table 8 AC characteristics, V CE = 8 V, f =.9 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max. 6.5 db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin 2. db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP3 9 32 dbm I C = 5 ma Table 9 AC characteristics, V CE = 5 V, f = 2.4 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max. 9.7 4.8 db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin 2.5 db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP3 9 32 dbm I C = 5 ma Preliminary datasheet 7 Revision.
3.3 Characteristic DC diagrams 2 =853 µa =768 µa I C [ma] 8 6 4 2 =682 µa =597 µa =52 µa =427 µa =34 µa =256 µa =7 µa =85 µa 2 4 6 8 V CE [V] Figure 3 Collector current I C = f(v CE ), = parameter 4 3 2 hfe 9 8.2.4.6.8. I C [A] Figure 4 Current gain h FE = f(i C ), V CE = 8 V Preliminary datasheet 8 Revision.
- -2-3 I C [A] -4-5 -6-7.5.55.6.65.7.75.8 V BE [V] Figure 5 Collector current I C = f(v BE ), V CE = 8 V -3-4 -5 [A] -6-7 -8-9.5.55.6.65.7.75.8 V BE [V] Figure 6 Base current = f(v BE ), V CE = 8 V Preliminary datasheet 9 Revision.
-9 - - [A] -2-3 -4.5.5 2 V EB [V] Figure 7 Base/emitter leakage current = f(v EB ), V CE = 8 V Note: Regard absolute maximum ratings for I C, V CE and P tot (see Table ) Preliminary datasheet Revision.
3.4 Characteristic AC diagrams 8 8V 7 6 5V f T [GHz] 5 4 3 2 4V 3V 2V V 2 4 6 8 2 4 6 8 I C [ma] Figure 8 Transition frequency f T = f(i C ), V CE = parameter 3 25 Gms 2 Gain [db] 5 Gma 5 S2 2 2 3 4 5 6 7 f [GHz] Figure 9 Gain G ms, G ma, IS 2 I 2 = f(f), I C = 5 ma, V CE = 8 V Preliminary datasheet Revision.
35 3.5GHz Gma [db] 25 2 5 5.45GHz.9GHz.5GHz.9GHz 2.4GHz 3.5GHz 2 4 6 8 I C [ma] Figure Maximum power gain G max = f(i C ), V CE = 8 V, f = parameter 35 3.5GHz Gma [db] 25 2 5 5.45GHz.9GHz.5GHz.9GHz 2.4GHz 3.5GHz 2 4 6 8 2 4 6 V CE [V] Figure Maximum power gain G max = f(v CE ), I C = 5 ma, f = parameter Preliminary datasheet 2 Revision.
.5.5 2.4.3.2. to 6 GHz 6.. 5. 6. 4...2.3.4 5..53. 2..5 2 3 4 5 4.. 3. -. 2.. 3 4 5.. - -.2 -.3 -.4-3 -4-5 -.5 - -.5-2 2mA 5mA Figure 2 Output reflection coefficient S 22 = f(f) at V CE = 8 V, I C = 2, 5 ma.5..2.3.4..5 2.. 2. 3. 3. 4. 4. 5. 5. 6. 6.. to 6 GHz..2.3.4.5.5 2 3 4 5 2 3 4 5 -... - -.2 -.3 -.4-3 -4-5 -.5 - -.5-2 2mA 5mA Figure 3 Input reflection coefficient S = f(f) at V CE = 8 V, I C = 2, 5 ma Preliminary datasheet 3 Revision.
.5.5 2.4.3 3 4.2 5..45 to 2.4 GHz.45..2.45.3.4.5.9.5 2 3 4 5.9..2.3.4.5.9 2.4.5.9 2.4 5 4 3.5.5 2 2mA 5mA Figure 4 Source impedance for minimum noise figure Z Sopt = f(f), V CE = 8 V, I C = 2, 5 ma 2.8 2.6 2.4 2.2 5mA NF min [db] 2.8.6.4.2 2mA.8.5.5 2 2.5 f [GHz] Figure 5 Noise figure N Fmin = f(f), V CE = 8 V, I C = 2, 5mA, Z S = Z Sopt Preliminary datasheet 4 Revision.
3.5 2.4GHz 3.9GHz 2.5.5GHz NF min [db] 2.5.9GHz.45GHz.5 2 4 6 8 I C [ma] Figure 6 Noise figure NF min = f(i C ), V CE = 8 V, f = parameter, Z S = Z Sopt 5.5 5 4.5 5mA NF5 [db] 4 3.5 3 2.5 2mA 2.5.5.5 2 2.5 f [GHz] Figure 7 Noise figure NF 5 = f(f), V CE = 8 V, I C = 2, 5 ma, Z S = 5 Ω Preliminary datasheet 5 Revision.
7 6 5 2.4GHz.9GHz.5GHz NF5 [db] 4 3.9GHz.45GHz 2 2 4 6 8 I C [ma] Figure 8 Noise figure NF 5 = f(i C ), V CE = 8 V, f = parameter, Z S = 5 Ω Note: The curves shown in this chapter Characteristic AC diagrams have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. T A = 25 C. Preliminary datasheet 6 Revision.
SOT343 Package 4 SOT343 Package 4 2 ±.2.3 3. MAX...9 ±. A.3 +. -.5 4x. M.5 2.6 +. -.5 2.±.. MIN..2 M A.5 +. -.5.25 ±. SOT343-PO V8 Figure 9 SOT343 package outline (dimension in mm) Soldering Type: Reflow Soldering.6.6.8.5.9 SOT343-FP V8 Figure 2 SOT343 footprint (dimension in mm) 25, June Date code (YM) Manufacturer Pin BGA42 Type code Figure 2 SOT343 marking layout Reel ø8 mm: 3. Pieces/Reel Reels/Box: x 3. = 3. 4.2 Reel ø33 mm:. Pieces/Reel Reels/Box: x. =. 2.3 8 Pin 2.5. SOT323-TP V2 Figure 22 SOT343 standard packing (dimension in mm) Preliminary datasheet 7 Revision.
Revision history Revision history Major changes since previous revision Reference Description Revision History: 26-2-2, Revision.9 rev.9 Preliminary datasheet Preliminary datasheet 8 Revision.
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