PHOTOCOUPLER PS2533-1,PS2533L-1

PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES NEPOC Series DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2533-1 is in a plastic DIP (Dual In-line Package) and the PS2533L-1 is lead bending type (Gull-wing) for surface mount. FEATURES High collector to emitter voltage (VCEO = 350 V) High Isolation voltage (BV = 5 000 Vr.m.s.) High current transfer ratio (CTR = 4 000% TYP.) High-speed switching (tr, tf = 100 μs TYP.) Ordering number of tape product: PS2533L-1-E3, E4, F3, F4 Safety standards UL approved: File No. E72422 BSI approved: No. 8221/8222 CSA approved: No. CA 101391 NEMKO approved: No. P98101708 SEMKO approved: No. 0143092/01-02 DEMKO approved: No. 307863 FIMKO approved: No. FI 17640 DIN EN60747-5-2 (VDE0884 Part2) approved (Option) APPLICATIONS Telephone, Exchange equipment FAX/MODEM Document No. PN10233EJ02V0DS (2nd edition) Date Published March 2006 CP(K) The mark shows major revised points. NEC Compound Semiconductor Devices, Ltd. 1990, 2006

PACKAGE DIMENSIONS (Unit : mm) DIP Type (New package) 6.5±0.5 4.6±0.35 PS2533-1 TOP VIEW 4 3 1 2 7.62 1. Anode 2. Cathode 3. Emitter 4. Collector 3.2±0.4 4.15±0.4 3.5±0.3 1.25±0.15 2.54 0 to 15 0.25 +0.1 0.05 0.50±0.10 0.25 M DIP Type 6.5±0.5 4.6±0.5 PS2533-1 TOP VIEW 4 3 1 2 7.62 1. Anode 2. Cathode 3. Emitter 4. Collector 4.15±0.4 3.5±0.3 3.3±0.5 1.25±0.15 2.54 0 to 15 0.25 +0.1 0.05 0.50±0.10 0.25 M 2 Data Sheet PN10233EJ02V0DS

Lead Bending Type (New package) PS2533L-1 6.5±0.5 4.6±0.35 TOP VIEW 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 3.5±0.3 1.25±0.15 0.25 M 2.54 0.25 +0.1 0.05 0.15 0.9±0.25 9.60±0.4 0.1 +0.1 0.05 Lead Bending Type PS2533L-1 6.5±0.5 4.6±0.5 TOP VIEW 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 3.5±0.3 1.25±0.15 0.25 M 2.54 0.25 +0.1 0.05 0.15 0.9±0.25 9.60±0.4 0.1 +0.1 0.05 Data Sheet PN10233EJ02V0DS 3

MARKING EXAMPLE No. 1 pin Mark 2533 NL601 Assembly Lot N L 6 01 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Standard PKG New PKG Made in Japan L J Made in Taiwan N 4 Data Sheet PN10233EJ02V0DS

ORDERING INFORMATION Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number *1 PS2533-1 PS2533-1-A Pb-Free Magazine case 100 pcs Standard products PS2533-1 PS2533L-1 PS2533L-1-A (UL, CSA, BSI, PS2533L-1-E3 PS2533L-1-E3-A Embossed Tape 1 000 pcs/reel NEMKO, SEMKO, PS2533L-1-E4 PS2533L-1-E4-A DEMKO, FIMKO PS2533L-1-F3 PS2533L-1-F3-A Embossed Tape 2 000 pcs/reel approved) PS2533L-1-F4 PS2533L-1-F4-A PS2533-1-V PS2533-1-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2533L-1-V PS2533L-1-V-A (VDE0884 Part2) PS2533L-1-V-E3 PS2533L-1-V-E3-A Embossed Tape 1 000 pcs/reel Approved (Option) PS2533L-1-V-E4 PS2533L-1-V-E4-A PS2533L-1-V-F3 PS2533L-1-V-F3-A Embossed Tape 2 000 pcs/reel PS2533L-1-V-F4 PS2533L-1-V-F4-A *1 For the application of the Safety Standard, following part number should be used. Data Sheet PN10233EJ02V0DS 5

ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current (DC) IF 80 ma Reverse Voltage VR 6 V Power Dissipation Derating ΔPD/ C 1.5 mw C Power Dissipation PD 150 mw Peak Forward Current *1 IFP 1 A Transistor Collector to Emitter Voltage VCEO 350 V Emitter to Collector Voltage VECO 0.6 V Collector Current IC 150 ma Power Dissipation Derating ΔPC/ C 3.0 mw/ C Power Dissipation PC 300 mw Isolation Voltage *2 BV 5 000 Vr.m.s. Operating Ambient Temperature TA 55 to +100 C Storage Temperature Tstg 55 to +150 C *1 PW = 100 μs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25 C, RH = 60% between input and output Pins 1-2 shorted together, 3-4 shorted together. 6 Data Sheet PN10233EJ02V0DS

ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage VF IF = 10 ma 1.15 1.40 V Reverse Current IR VR = 5 V 5 μa Transistor Coupled Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 30 pf Collector to Emitter Dark Current Current Transfer Ratio (IC/IF) Collector Saturation Voltage ICEO VCE = 350 V, IF = 0 ma 400 na CTR IF = 1 ma, VCE = 2 V 1 500 4 000 6 500 % VCE(sat) IF = 1 ma, IC = 2 ma 1.0 V Isolation Resistance RI-O VI-O = 1.0 kvdc 10 11 Ω Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pf Rise Time *1 tr VCC = 5 V, IC = 10 ma, RL = 100 Ω 100 μs Fall Time *1 tf 100 *1 Test circuit for switching time Pulse input VCC (PW = 1 ms, Duty cycle = 1/10) IF 50 Ω VOUT RL = 100 Ω Data Sheet PN10233EJ02V0DS 7

TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) Diode Power Dissipation PD (mw) 150 100 50 DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 mw/ C 0 25 50 75 100 125 150 Ambient Temperature TA ( C) Transistor Power Dissipation PC (mw) 400 300 200 100 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.0 mw/ C 0 25 50 75 100 125 150 Ambient Temperature TA ( C) Forward Current IF (ma) 100 10 1 0.1 FORWARD CURRENT vs. FORWARD VOLTAGE TA = +100 C +75 C +50 C +25 C 0 C 25 C 55 C Collector Current IC (ma) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 4.5 ma 140 120 100 80 60 40 20 5.0 ma 4.0 ma 3.5 ma 3.0 ma 2.5 ma 2.0 ma 1.5 ma 1.0 ma IF = 0.5 ma Collector to Emitter Dark Current ICEO (A) 0.01 0.6 0.8 1.0 1.2 1.4 1.6 100 n 10 n 1 n Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 10 μ VCE = 350 V 1 μ 100 p 50 25 0 25 50 75 100 Ambient Temperature TA ( C) Collector Current IC (ma) 0 1 2 3 4 5 6 7 8 Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 500 100 50 10 5 1 0.5 IF = 5.0 ma 2.0 ma 1.0 ma 0.5 ma 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Collector Saturation Voltage VCE(sat) (V) Remark The graphs indicate nominal characteristics. 8 Data Sheet PN10233EJ02V0DS

Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 ;;;;; ;;; ;;;; ;;;; ;;;; ;;; ;;;; ;;; ;;; ;; ;; ; 1.0 0.8 0.6 0.4 0.2 0.0 Normalized to 1.0 at TA = 25 C, IF = 1 ma, VCE = 2 V 50 25 0 25 50 75 100 Ambient Temperature TA ( C) Current Transfer Ratio CTR (%) 5 000 4 000 3 000 2 000 1 000 CURRENT TRANSFER RATIO vs. FORWARD CURRENT Sample A B VCE = 2 V 0 0.1 0.5 1 5 10 15 Forward Current IF (ma) 500 VCC = 10 V, IC = 10 ma SWITCHING TIME vs. LOAD RESISTANCE tr 5 0 FREQUENCY RESPONSE Switching Time t ( μ s) 100 50 10 5 td tf ts Normalized Gain Gv 5 10 15 20 25 RL = 1 kω VCE = 4 V, Vin = 0.1 Vp-p 1 kω 1 μf Vin 47 Ω RL Vout 100 Ω 10 Ω 1 20 50 100 200 500 1 k 2 k 30 0.01 0.1 1 10 100 Load Resistance RL (Ω) Frequency f (khz) 1.2 LONG TERM CTR DEGRADATION 1.0 CTR (Relative Value) 0.8 0.6 0.4 IF = 1 ma, TA = 25 C IF = 1 ma, TA = 60 C 0.2 0.0 10 10 2 10 3 10 4 10 5 10 6 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet PN10233EJ02V0DS 9

TAPING SPECIFICATIONS (Unit : mm) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 φ1.5 +0.1 0 1.75±0.1 4.5 MAX. 7.5±0.1 16.0±0.3 10.3±0.1 1.55±0.1 5.3±0.1 4.0±0.1 8.0±0.1 0.4 Tape Direction PS2533L-1-E3 PS2533L-1-E4 Outline and Dimensions (Reel) 2.0±0.5 2.0±0.5 φ13.0±0.2 R 1.0 φ21.0±0.8 254±2.0 φ 80.0±1.0 φ 17.5±1.0 21.5±1.0 Packing: 1 000 pcs/reel 15.9 to 19.4 Outer edge of flange 10 Data Sheet PN10233EJ02V0DS

Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.5 +0.1 0 1.75±0.1 4.5 MAX. 7.5±0.1 16.0±0.3 10.3±0.1 1.55±0.1 5.3±0.1 4.0±0.1 8.0±0.1 0.4 Tape Direction PS2533L-1-F3 PS2533L-1-F4 Outline and Dimensions (Reel) 2.0±0.5 2.0±0.5 φ13.0±0.2 R 1.0 φ21.0±0.8 330±2.0 φ 100±1.0 φ 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel 15.9 to 19.4 Outer edge of flange Data Sheet PN10233EJ02V0DS 11

NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering Peak reflow temperature Time of peak reflow temperature Time of temperature higher than 220 C Time to preheat temperature from 120 to 180 C Number of reflows Flux 260 C or below (package surface temperature) 10 seconds or less 60 seconds or less 120±30 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T ( C) 120 C 120±30 s (preheating) 180 C (heating) to 10 s to 60 s 260 C MAX. 220 C Time (s) (2) Wave soldering Temperature Time Preheating conditions Number of times Flux 260 C or below (molten solder temperature) 10 seconds or less 120 C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron Peak temperature (lead part temperature) Time (each pins) Flux 350 C or below 3 seconds or less Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100 C. 12 Data Sheet PN10233EJ02V0DS

(4) Cautions Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10233EJ02V0DS 13

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages 300 Vr.m.s. for rated line voltages 600 Vr.m.s. IV III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 UIORM, Pd < 5 pc UIORM Upr 890 1 068 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 UIORM, Pd < 5 pc Upr 1 424 Vpeak Highest permissible overvoltage UTR 8 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175 Material group (DIN VDE 0109) III a Storage temperature range Tstg 55 to +150 C Operating temperature range TA 55 to +100 C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 C VIO = 500 V dc at TA MAX. at least 100 C Ris MIN. Ris MIN. 10 12 10 11 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 C (Tsi) Tsi Isi Psi Ris MIN. 175 400 700 10 9 C ma mw Ω 14 Data Sheet PN10233EJ02V0DS

APPLICATION FOR TELEPHONE (EXAMPLE) LINE Bell Ringing Signal (75 Vr.m.s., 16 Hz) PS2505/PS2506 PS2705/PS2707 PS2805 etc. Bell Ringing Detect VCC PS2521 PS2525 Line Observe VCC Dial Pulse PS2532/PS2533/PS2535 Generator PS2732/PS2733 PS2832/PS2833 Dialer Circuit CPU OCMOS FET PS7xxx Speech Circuit IN OUT Data Sheet PN10233EJ02V0DS 15

When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4-0110 16 Data Sheet PN10233EJ02V0DS

Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. Do not burn, destroy, cut, crush, or chemically dissolve the product. Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 TEL: +82-2-558-2120 FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504

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