Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter Ratings Units CBO Collector-Base oltage : KSA220 : KSA220A CEO Collector-Emitter oltage : KSA220 : KSA220A * PW ms, Duty Cycle 50% - 20-60 - 20-60 EBO Emitter-Base oltage - 5 I C Collector Current (DC) -.2 A I CP *Collector Current (Pulse) - 2.5 A I B Base Current - 0.3 A P C Collector Dissipation (T a =25 C).2 W P C Collector Dissipation (T C =25 C) 20 W T J Junction Temperature 50 C T STG Storage Temperature - 55 ~ 50 C Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units I CBO Collector Cut-off Current CB = - 20, I E = 0 - µa I EBO Emitter Cut-off Current EB = - 3, I C = 0 - µa h FE * DC Current Gain CE = - 5, I C = - 5mA h FE2 CE = - 5, I C = - 0.3A * : PW 350µs, Duty Cycle 2% Pulsed h FE Classification 35 60 50 40 320 CE (sat) * Collector-Emitter Saturation oltage I C = - A, I B = - 0.2A - 0.4-0.7 BE (sat) * Base-Emitter Saturation oltage I C = - A, I B = - 0.2A - -.3 f T Current Gain Bandwidth Product CE = - 5, I C = - 0.2A 75 MHz C ob Output Capacitance CB = -, I E = 0 f = MHz 26 pf Classification R O Y h FE2 60 ~ 20 0 ~ 200 60 ~ 320 200 Fairchild Semiconductor Corporation Rev. A, June 200
Typical Characteristics -.0-0.8-0.6-0.4-0.2 IB = -ma IB = -9mA IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -ma hfe, DC CURRENT GAIN 00 0 CE = -5 IB = 0A -0.0-0 - -20-30 -40-50 -60 -E-3-0.0-0. - - CE[], COLLECTOR-EMITTER OLTAGE Figure. Static Characteristic Figure 2. DC current Gain BE(sat), CE(sat)[], SATURATION OLTAGE - - -0. BE(sat) CE(sat) IC = 5 IB -0.0 -E-3-0.0-0. - - C ob (PF), CAPACITANCE 00 0 f=.0mhz I E =0 - - -0-00 CB [], COLLECTOR-BASE OLTAGE Figure 3. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage Figure 4. Collector Output Capacitance ftmhz), CURRENT GAIN BANDWIDTH PRODUCT 00 0 CE = -5-0.0-0. - - - -0. IC MAX. (Pulse) IC MAX. (DC) Dissipation Limited ms DC(PW=50ms) S/b Limited PW=0 μs KSA220 KSA220A -0.0 - - -0-00 ms CE[], COLLECTOR-EMITTER OLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area 200 Fairchild Semiconductor Corporation Rev. A, June 200
Typical Characteristics (Continued) dt(%),icderating 60 40 20 0 80 60 40 20 S/b Limited Dissipation Limited P C [W], POWER DISSIPATION 20 8 6 4 2 8 6 4 2 0 0 50 0 50 200 0 0 50 0 50 200 Tc[ o C], CASE TEMPERATURE T C [ o C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating 200 Fairchild Semiconductor Corporation Rev. A, June 200
Package Demensions TO-26 3.90 ±0. 8.00 ±0.30 3.25 ±0.20 ø3.20 ±0. 4.20MAX.00 ±0.20 0.75 ±0. (.00) (0.50).60 ±0. 0.75 ±0. 3.06 ±0.30 6. ±0.20.75 ±0.20 2.28TYP [2.28±0.20] # 2.28TYP [2.28±0.20] 0.50 +0. 0.05 Dimensions in Millimeters 200 Fairchild Semiconductor Corporation Rev. A, June 200
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