Si3CX Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).756 at V GS = -.5 V -.35 -.38 at V GS = -.5 V -.35. at V GS = -.8 V -. nc. at V GS = -.5 V -.5 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFET % R g Tested Typical ESD protection: V (HBM) Fast Switching Speed Compliant to RoHS Directive /95/EC APPLICATIONS Load and Small Signal Switch for Portable Devices Drivers: Relays, Solenoids, Displays, Lamps Battery Operated Systems Smart Phones, Tablet PCs SC-89 (6-LEADS) S S S 6 D Marking Code G D 3 5 G S 7 XX Lot Traceability and Date Code Part # Code YY G G Top View Ordering Information: Si3CX-T-GE3 (Lead (Pb)-free and Halogen-free) D Dual P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 8 T A = 5 C -.5 b, c Continuous Drain Current (T J = 5 C) I D T A = 7 C -.36 b, c A Pulsed Drain Current (t = 3 µs) I DM -.5 Continuous Source-Drain Diode Current T A = 5 C I S -.8 b, c T A = 5 C. b, c Maximum Power Dissipation P D W T A = 7 C. b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 7 565 Maximum Junction-to-Ambient a, b Steady State R thja C/W 56 675 State Notes: a. Maximum under steady state conditions is 675 C/W. b. Surface mounted on " x " FR board. c. t = 5 s. Document Number: 6333 S-38-Rev. A, -Jul- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si3CX SPECIFICATIONS (T J = 5 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 5 µa - V V DS Temperature Coefficient V DS /T J - I D = - 5 µa V GS(th) Temperature Coefficient V GS(th) /T J.8 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µa -. - V V DS = V, V GS = ± 8 V ± 3 Gate-Source Leakage I GSS V DS = V, V GS = ±.5 V ± V DS = - V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V, T J = 85 C - µa On-State Drain Current a I D(on) V DS = 5 V, V GS = -.5 V -.5 A V GS = -.5 V, I D = -.35 A.63.756 Drain-Source On-State Resistance a R DS(on) V GS = -.5 V, I D = -.35 A.865.38 V GS = -.8 V, I D = -. A.. V GS = -.5 V, I D = -.5 A.6. Forward Transconductance g fs V DS = - V, I D = -. A S Dynamic b Input Capacitance C iss 5 Output Capacitance C oss V DS = - V, V GS = V, f = MHz 5 pf Reverse Transfer Capacitance C rss V DS = - V, V GS = -.5 V, I D = -. A.65.5 Total Gate Charge Q g nc Gate-Source Charge Q gs V DS = - V, V GS = -.5 V, I D = -. A. Gate-Drain Charge Q gd.6 Gate Resistance R g f = MHz. Turn-On Delay Time t d(on) 9 8 Rise Time t r V DD = - V, R L = 33.3 Turn-Off DelayTime t d(off) I D -.3 A, V GEN = -.5 V, R g = Fall Time t f 8 6 Turn-On Delay Time t d(on) ns Rise Time t r V DD = - V, R L = 33.3 8 6 Turn-Off DelayTime t d(off) I D -.3 A, V GEN = - 8 V, R g = 9 8 Fall Time t f 5 Drain-Source Body Diode Characteristics Pulse Diode Forward Current a I SM -.5 A Body Diode Voltage V SD I S = -.3 A -.8 -. V Body Diode Reverse Recovery Time t rr 6 ns Body Diode Reverse Recovery Charge Q rr 8 6 nc I F = -.3 A, di/dt = A/µs Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 6333 S-38-Rev. A, -Jul- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si3CX P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). - I GSS - Gate Current (ma).8.6.. T J = 5 C I GSS - Gate Current (A) -5-6 -7 T J = 5 C T J = 5 C. 3 6 9 V GS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage -8 3 6 9 5 V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage.5 V GS = 5 V thru 3 V V GS =.5 V.8 I D - Drain Current (A)..9.6.3 V GS =.5 V V GS = V I D - Drain Current (A).6.. T C = 5 C T C = 5 C.5.5 V DS - Drain-to-Source Voltage (V) T C = - 55 C..8..6 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 9 R DS(on) - On-Resistance (Ω).5.5 V GS =.5 V V GS =.8 V V GS =.5 V V GS =.5 V C - Capacitance (pf) 7 5 36 8 C oss C iss C rss.3.6.9..5 I D -Drain Current (A) On-Resistance vs. Drain Current 5 5 V DS - Drain-to-Source Voltage (V) Capacitance Document Number: 6333 S-38-Rev. A, -Jul- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si3CX P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) V GS - Gate-to-Source Voltage (V) 8 6 I D =. A V DS = V V DS = 5 V V DS = 6 V R DS(on) - On-Resistance (Normalized).5.3..9 I D =.35 A V GS =.5 V V GS =.5 V.5.9.35.8 Q g - Total Gate Charge (nc) Gate Charge.7-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature. I D =.35 A I S - Source Current (A) T J = 5 C T J = 5 C R DS(on) - On-Resistance (Ω)..8.6 T J = 5 C T J = 5 C...3.6.9..5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 3 5 6 7 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.7.7.6.5.8 V GS(th) (V).5 I D = 5 μa Power (W).35.9..5.3-5 - 5 5 5 75 5 5 T J -Temperature( C) Threshold Voltage.. Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 6333 S-38-Rev. A, -Jul- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si3CX P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). Limited by R DS(on) * μs.8 I D - Drain Current (A).. ms ms ms s s, DC Power (W)..6 T C = 5 C BVDSS Limited Single Pulse.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 5 5 75 5 5 T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient Duty Cycle =.5 Normalized Effective Transient Thermal Impedance t. Notes:.. P DM.5. t t. Duty Cycle, D = t. Per Unit Base = R thja =675 C/W 3. T JM -T A =P DM Z (t) thja Single Pulse. Surface Mounted..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?6333. Document Number: 6333 S-38-Rev. A, -Jul- 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information SC-89 6-Leads (SOT-563F) 3 E/ A D e x aaa C D B 6 5 SECTION B-B E/ C 6 3 E E x aaa C DETAIL A 5 3 x bbb C e B 6x b ddd M C A B D L A L A A SEE DETAIL A Notes. Dimensions in millimeters.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed.5 mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed.5 mm per side. 3. Dimensions D and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. Datums A, B and D to be determined. mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between.8 mm and.5 mm from the lead tip. DIM. MILLIMETERS MIN. NOM. MAX. A.56.58.6 A.. b.5..3 c...8 D.5.6.7 E.5.6.7 E.5..5 e.5.5.55 e.95..5 L.5.35.5 L...3 C-39-Rev. C, -Aug- DWG: 588 Revision: -Aug- Document Number: 76 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Application Note 86 RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead.5 (.3).69 (.753).3 (.798).9 (.78). (.3).5 (.). (.5) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 765 Revision: -Jan-8
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9