MOSFET 8VCoolMOSªP7PowerTransistor Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. PGSOT223 Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thof3VandsmallestV(GS)thvariationof±.5V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25 C 8 V RDS(on),max.6 Ω Qg,typ 2 nc ID 8 A Eoss @ 5V 2. µj VGS(th),typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGSOT223 8R6 see Appendix A 1 Rev.2.1,21829
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... Package Outlines....................................................................... 11 Appendix A............................................................................ 12 Revision History........................................................................ 13 Trademarks........................................................................... 13 Disclaimer............................................................................ 13 2 Rev.2.1,21829
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 8 5.5 A TC=25 C TC= C Pulsed drain current 2) ID,pulse 22 A TC=25 C Avalanche energy, single pulse EAS 2 mj ID=1.4A; VDD=5V Avalanche energy, repetitive EAR.17 mj ID=1.4A; VDD=5V Avalanche current, repetitive IAR 1.4 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=to4V Gate source voltage VGS 2 3 2 3 V static; AC (f>1 Hz) Power dissipation Ptot 7.4 W TC=25 C Operating and storage temperature Tj,Tstg 55 15 C Continuous diode forward current IS 2.2 A TC=25 C Diode pulse current 2) IS,pulse 22 A TC=25 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=to4V,ISD<=1.7A,Tj=25 C Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=to4V,ISD<=1.7A,Tj=25 C 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point RthJS 17. C/W Thermal resistance, junction ambient RthJA 16 C/W Device on PCB, minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wave & reflow soldering allowed RthJA 75 C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 3 Rev.2.1,21829
3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=.17mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS 1 µa VDS=8V,VGS=V,Tj=25 C VDS=8V,VGS=V,Tj=15 C IGSS 1 µa VGS=2V,VDS=V RDS(on).51 1.33.6 Ω VGS=V,ID=3.4A,Tj=25 C VGS=V,ID=3.4A,Tj=15 C Gate resistance RG 1 Ω f=25khz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 57 pf VGS=V,VDS=5V,f=25kHz Output capacitance Coss 11 pf VGS=V,VDS=5V,f=25kHz Effective output capacitance, energy related 1) Co(er) 17 pf VGS=V,VDS=to5V Effective output capacitance, time related 2) Co(tr) 252 pf ID=constant,VGS=V,VDS=to5V Turnon delay time td(on) 8 ns Rise time tr 8 ns Turnoff delay time td(off) 4 ns Fall time tf ns VDD=4V,VGS=13V,ID=3.4A, RG=Ω VDD=4V,VGS=13V,ID=3.4A, RG=Ω VDD=4V,VGS=13V,ID=3.4A, RG=Ω VDD=4V,VGS=13V,ID=3.4A, RG=Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2 nc VDD=64V,ID=3.4A,VGS=toV Gate to drain charge Qgd 8 nc VDD=64V,ID=3.4A,VGS=toV Gate charge total Qg 2 nc VDD=64V,ID=3.4A,VGS=toV Gate plateau voltage Vplateau 4.5 V VDD=64V,ID=3.4A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto5V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto5V 4 Rev.2.1,21829
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=3.4A,Tf=25 C Reverse recovery time trr 64 ns VR=4V,IF=1.7A,diF/dt=5A/µs Reverse recovery charge Qrr 6 µc VR=4V,IF=1.7A,diF/dt=5A/µs Peak reverse recovery current Irrm 14 A VR=4V,IF=1.7A,diF/dt=5A/µs 5 Rev.2.1,21829
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 2 9 8 7 1 ms 1 ms µs µs 1 µs 6 Ptot[W] 5 ID[A] DC 4 1 3 2 2 1 25 5 75 125 15 TC[ C] Ptot=f(TC) 3 1 2 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance 2 1 1 ms µs µs 1 µs ms 1.5 ID[A] 1 DC ZthJC[K/W].2.1.5.2 2.1 single pulse 3 1 2 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 5 4 3 2 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,21829
Diagram5:Typ.outputcharacteristics 25 2 V V 8 V 7 V 2 6 V Diagram6:Typ.outputcharacteristics 2 15 2 V V 8 V 7 V 6 V 15 ID[A] 5.5 V ID[A] 5.5 V 5 V 5 V 5 4.5 V 5 4.5 V 5 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 3. 2.5 5 V 5.5 V 6 V 6.5 V 7 V V Diagram8:Drainsourceonstateresistance 1.6 1.4 1.2 RDS(on)[Ω] 2. 1.5 RDS(on)[Ω] 1..8.6 98% 1..4 typ.5 5 15 2 25 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS.2 5 25 25 5 75 125 15 Tj[ C] RDS(on)=f(Tj);ID=3.4A;VGS=V 7 Rev.2.1,21829
Diagram9:Typ.transfercharacteristics 25 Diagram:Typ.gatecharge 25 C 9 2 8 7 ID[A] 15 15 C VGS[V] 6 5 4 12 V 64 V 3 5 2 1 2 4 6 8 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 15 2 25 Qgate[nC] VGS=f(Qgate);ID=3.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 25 C 125 C Diagram12:Avalancheenergy 2 18 16 1 14 12 IF[A] EAS[mJ] 8 6 4 2 1..5 1. 1.5 2. 2.5 VSD[V] IF=f(VSD);parameter:Tj 25 5 75 125 15 Tj[ C] EAS=f(Tj);ID=1.7A;VDD=5V 8 Rev.2.1,21829
Diagram13:Drainsourcebreakdownvoltage 95 Diagram14:Typ.capacitances 4 9 3 Ciss 85 2 VBR(DSS)[V] 8 C[pF] 1 Coss 75 Crss 7 75 5 25 25 5 75 125 15 175 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1 2 3 4 5 VDS[V] C=f(VDS);VGS=V;f=25kHz Diagram15:Typ.Cossstoredenergy 4. 3.5 3. 2.5 Eoss[µJ] 2. 1.5 1..5. 2 3 4 5 6 7 8 VDS[V] Eoss=f(VDS) 9 Rev.2.1,21829
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.1,21829
6PackageOutlines DOCUMENT NO. Z8B18553 DIM MILLIMETERS MIN MAX A 1.52 1.8 A1. A2 1,5 1.7 b.6.8 b2 2.95 3. c.24.32 D E E1 e e1 L N O 6.3 6.7 3.3 6.7 7.3 3.7 2.3 BASIC 4.6 BASIC.75 1. 3 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE 242216 REVISION 1 5mm Figure1OutlinePGSOT223,dimensionsinmmIndustrialGrade 11 Rev.2.1,21829
7AppendixA Table11RelatedLinks IFXCoolMOSWebpage:www.infineon.com IFXDesigntools:www.infineon.com 12 Rev.2.1,21829
RevisionHistory Revision:21829,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 217919 Release of final version 2.1 21829 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.1,21829