MOSFET 8VCoolMOSªP7PowerTransistor Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. PGTO22FP Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thof3VandsmallestV(GS)thvariationof±.V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andsolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=2 C 8 V RDS(on),max.4 Ω Qg,typ 24 nc ID 11 A Eoss @ V 2.7 µj VGS(th),typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 8R4P7 see Appendix A 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... 1 Package Outlines....................................................................... 11 Appendix A............................................................................ 12 Revision History........................................................................ 13 Trademarks........................................................................... 13 Disclaimer............................................................................ 13 2
1Maximumratings attj=2 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 11 7.1 A TC=2 C TC=1 C Pulsed drain current 2) ID,pulse 29 A TC=2 C Avalanche energy, single pulse EAS 29 mj ID=1.8A; VDD=V Avalanche energy, repetitive EAR.22 mj ID=1.8A; VDD=V Avalanche current, repetitive IAR 1.8 A MOSFET dv/dt ruggedness dv/dt 1 V/ns VDS=to4V Gate source voltage VGS 2 3 2 3 V static; AC (f>1 Hz) Power dissipation Ptot 29 W TC=2 C Operating and storage temperature Tj,Tstg 1 C Mounting torque Ncm M2. screw Continuous diode forward current IS A TC=2 C Diode pulse current 2) IS,pulse 29 A TC=2 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=to4V,ISD<=2.2A,Tj=2 C Maximum diode commutation speed 3) dif/dt A/µs VDS=to4V,ISD<=2.2A,Tj=2 C Insulation withstand voltage VISO 2 V Vrms,TC=2 C,t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.4 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 26 C 1.6 mm (.63 in.) from case for 1s 1) TO22 equivalent. Limited by Tj max. Maximum duty cycle D=. 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 3
3Electricalcharacteristics attj=2 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2. 3 3. V VDS=VGS,ID=.22mA Zero gate voltage drain current Gatesource leakage curent incl. zener diode Drainsource onstate resistance IDSS 1 1 µa VDS=8V,VGS=V,Tj=2 C VDS=8V,VGS=V,Tj=1 C IGSS 1 µa VGS=2V,VDS=V RDS(on).38.99.4 Ω VGS=1V,ID=4.A,Tj=2 C VGS=1V,ID=4.A,Tj=1 C Gate resistance RG 1 Ω f=2khz,opendrain TableDynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 77 pf VGS=V,VDS=V,f=2kHz Output capacitance Coss 14 pf VGS=V,VDS=V,f=2kHz Effective output capacitance, energy related 1) Co(er) 24 pf VGS=V,VDS=toV Effective output capacitance, time related 2) Co(tr) 3 pf ID=constant,VGS=V,VDS=toV Turnon delay time td(on) 1 ns Rise time tr 6 ns Turnoff delay time td(off) 4 ns Fall time tf 1 ns VDD=4V,VGS=13V,ID=4.A, RG=7.Ω VDD=4V,VGS=13V,ID=4.A, RG=7.Ω VDD=4V,VGS=13V,ID=4.A, RG=7.Ω VDD=4V,VGS=13V,ID=4.A, RG=7.Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 4 nc VDD=64V,ID=4.A,VGS=to1V Gate to drain charge Qgd 9 nc VDD=64V,ID=4.A,VGS=to1V Gate charge total Qg 24 nc VDD=64V,ID=4.A,VGS=to1V Gate plateau voltage Vplateau 4. V VDD=64V,ID=4.A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromtoV 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromtoV 4
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=4.A,Tf=2 C Reverse recovery time trr 1 ns VR=4V,IF=2.2A,diF/dt=A/µs Reverse recovery charge Qrr 11 µc VR=4V,IF=2.2A,diF/dt=A/µs Peak reverse recovery current Irrm 17 A VR=4V,IF=2.2A,diF/dt=A/µs
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 3 Diagram2:Safeoperatingarea 1 2 3 1 µs 1 ms 1 µs 1 µs 1 1 1 ms 2 DC Ptot[W] 2 1 ID[A] 1 1 1 1 1 2 2 7 1 12 1 TC[ C] Ptot=f(TC) 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 2 Diagram4:Max.transientthermalimpedance 1 1 1 1 1 ms 1 ms 1 µs 1 µs 1 µs. ID[A] 1 1 1 DC ZthJC[K/W] 1 1 1.2.1..2.1 single pulse 1 2 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 2 1 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 6
Diagram:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 3 3 2 2 V 1 V 8 V 7 V 6 V 2 2 2 V 1 V 8 V 7 V 6 V ID[A] 2 1. V ID[A] 1 1. V V 1 V 4. V 4. V 1 1 2 VDS[V] ID=f(VDS);Tj=2 C;parameter:VGS 1 1 2 VDS[V] ID=f(VDS);Tj=12 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 2. V. V 1.8 1.6 6 V 6. V 7 V 1 V Diagram8:Drainsourceonstateresistance 1.1.9 1.4.7 98% RDS(on)[Ω] 1.2 1. RDS(on)[Ω]. typ.8.3.6.4 1 2 3 ID[A] RDS(on)=f(ID);Tj=12 C;parameter:VGS.1 2 2 7 1 12 1 Tj[ C] RDS(on)=f(Tj);ID=4.A;VGS=1V 7
Diagram9:Typ.transfercharacteristics 3 Diagram1:Typ.gatecharge 1 3 2 2 C 9 8 7 2 6 12 V 64 V ID[A] 1 1 C VGS[V] 4 1 3 2 1 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 1 1 2 2 Qgate[nC] VGS=f(Qgate);ID=4.Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 2 C 12 C Diagram12:Avalancheenergy 3 2 1 1 2 IF[A] EAS[mJ] 1 1 1 1 1.. 1. 1. 2. VSD[V] IF=f(VSD);parameter:Tj 2 7 1 12 1 Tj[ C] EAS=f(Tj);ID=1.8A;VDD=V 8
Diagram13:Drainsourcebreakdownvoltage 9 Diagram14:Typ.capacitances 1 4 9 1 3 Ciss 8 1 2 VBR(DSS)[V] 8 C[pF] 1 1 Coss 7 1 Crss 7 7 2 2 7 1 12 1 17 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1 1 1 2 3 4 VDS[V] C=f(VDS);VGS=V;f=2kHz Diagram1:Typ.Cossstoredenergy 6 4 Eoss[µJ] 3 2 1 1 2 3 4 6 7 8 VDS[V] Eoss=f(VDS) 9
TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 1
6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM MILLIMETERS INCHES MIN MAX MIN MAX A 4. 4.9.177.193 A1 2.34 2.8.92.112 A2 2.42 2.86.9.113 b.6.9.26.3 b1.9 1.38.37.4 b2.9 1.1.37.9 b3.6 1.38.26.4 b4.6 1.1.26.9 c D D1 E e e1 N H L L1 øp Q.4.63 1.67 16.1 8.97 9.83 1. 1.6 2.4 (BSC) 28.7 12.78 2.83 2.9 3.1.8 3 29.7 13.7 3.4 3.38 3..16.617.33.394 1.13.3.111.116.124.387.419.1 (BSC).2 3.2.636 1.171.41.136.133.138 DOCUMENT NO. Z8B3319 SCALE 2. EUROPEAN PROJECTION 2. ISSUE DATE 183216 REVISION 6 mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 11
7AppendixA Table11RelatedLinks IFXCoolMOSWebpage:www.infineon.com IFXDesigntools:www.infineon.com 12
RevisionHistory Revision:21827,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 2167 Release of final version 2.1 21827 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust21 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13