DA3J101F0L DA3J101F0L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3

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Transcription:

Revised : 201-06-0 Doc No. TT-EA-11766 Silicon epitaxial planar type For high speed switching circuits DAX101F in SMini type package 2.0 0. Unit: mm 0.1 Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-9 V-0 / MSL:Level 1 compliant) Marking Symbol: 22 Basic Part Number : Dual DA2J101 (Series) Packaging Embossed type (Thermo-compression sealing) : 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR V Maximum peak reverse voltage VRM 80 V Forward current 100 ma IF Series 65 ma Peak forward current 225 ma IFM Series 15 ma Non-repetitive peak 500 ma forward surge current *1 IFSM Series 25 ma Junction temperature Tj 150 C Operating ambient temperature Topr -0 to +85 C Storage temperature Tstg -55 to +150 C Note) *1: t = 1 s 1 2 (0.65) (0.65) 1. 1. Anode1 2. Cathode2. Cathode1 Anode2 Panasonic JEITA Code 1.25 2.1 SMini-F2-B SC-85 80 Internal Connection 1 2 0.9 1 of

Revised : 201-06-0 Doc No. TT-EA-11766 Electrical Characteristics Ta = 25 C C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 ma 0.92 1.20 V Reverse voltage VR IR = 100 μa 80 V Reverse current IR VR = 80 V 100 na Terminal capacitance Ct VR = 0 V, f = 1 MHz 1.2 pf Reverse recovery time *1 IF = 10 ma, VR = 6V trr Irr = 0.25 x IR ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 701 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz.. *1: trr test circuit Bias Application Unit (N-50BU) Input Pulse Output Pulse Pulse Generator (PG-10N) R s = 50 Ω A Wave Form Analyzer (SAS-810) R i = 50 Ω V R t r t p 10% 90% t = 2 μs p t r = 0.5 ns δ = 0.05 t I F t rr I = 0.25 I rr R I F = 10 ma V R = 6 V t 2 of

Revised : 201-06-0 Doc No. TT-EA-11766 Technical Data ( reference ) Forward current IF (A) IF - VF 1.E+00 1.E-01 Ta = 125 C 1.E-02 85 C 1.E-0 25 C 1.E-0 1.E-05-0 C 1.E-06 0.0 0.2 0. 0.6 0.8 1.0 1.2 Forward voltage VF (V) Reverse current IR (A) 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 IR - VR IR value is not exceeding 100 pa at -0 C 1.E-10 0 20 0 60 80 Reverse voltage VR (V) Ta = 125 C 85 C 25 C Terminal capacitance Ct (pf) 1.2 1.0 0.8 0.6 0. 0.2 Ct - VR Ta = 25 C f = 1 MHz 0.0 0 10 20 0 0 Reverse voltage VR (V) of

Revised : 201-06-0 Doc No. TT-EA-11766 SMini-F2-B Unit: mm 2.0±0.2 0.0 +0.05-0.02 0.1 +0.05-0.02 1 2 1.25±0.10 2.1±0.1 (5 ) (5 ) (0.65) (0.65) 1.±0.1 0 to 0.1 (0.89) 0.25±0.050 0.9±0.1 (0.9) Land Pattern (Reference) (Unit: mm) 0.9 1.9 0.8 1. of

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