MOSFET 6VCoolMOSªP7PowerTransistor DPAK TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The6V CoolMOS P7seriesisthesuccessortotheCoolMOS P6series.It combinesthebenefitsofafastswitchingsjmosfetwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentesdcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. 1 2 3 tab Features Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness Significantreductionofswitchingandconductionlosses ExcellentESDrobustness>2kV(HBM)forallproducts BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowrds(on)*a(below1ohm*mm²) Benefits Easeofuseandfastdesigninthroughlowringingtendencyandusage acrosspfcandpwmstages Simplifiedthermalmanagementduetolowswitchingandconduction losses Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kvesd protection Suitableforawidevarietyofapplicationsandpowerranges Gate Pin 1 Drain Pin 2 Source Pin 3 Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 65 V RDS(on),max 28 mω Qg,typ 18 nc ID,pulse 36 A Eoss @ 4V 2.1 µj Body diode dif/dt 9 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 2523 6R28P7 see Appendix A 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 13 Revision History........................................................................ 14 Trademarks........................................................................... 14 Disclaimer............................................................................ 14 2
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 12 8 A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse 36 A TC=25 C Avalanche energy, single pulse EAS 38 mj ID=2.7A; VDD=5V; see table 1 Avalanche energy, repetitive EAR.19 mj ID=2.7A; VDD=5V; see table 1 Avalanche current, single pulse IAS 2.7 A MOSFET dv/dt ruggedness dv/dt 8 V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation Ptot 53 W TC=25 C Storage temperature Tstg 55 15 C Operating junction temperature Tj 55 15 C Mounting torque Ncm Continuous diode forward current IS 12 A TC=25 C Diode pulse current 2) IS,pulse 36 A TC=25 C Reverse diode dv/dt 3) dv/dt 5 V/ns VDS=...4V,ISD<=12A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 9 A/µs VDS=...4V,ISD<=12A,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj,max. Maximum Duty Cycle D =.5 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 3
2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.36 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA 35 45 C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 4
3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=.19mA Zero gate voltage drain current IDSS 1 1 µa VDS=6V,VGS=V,Tj=25 C VDS=6V,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).214.51.28 Ω VGS=1V,ID=3.8A,Tj=25 C VGS=1V,ID=3.8A,Tj=15 C Gate resistance RG 7 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 761 pf VGS=V,VDS=4V,f=25kHz Output capacitance Coss 14 pf VGS=V,VDS=4V,f=25kHz Effective output capacitance, energy related 1) Co(er) 27 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 28 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 17 ns Rise time tr 9 ns Turnoff delay time td(off) 6 ns Fall time tf 9 ns VDD=4V,VGS=13V,ID=3.8A, RG=1.Ω;seetable9 VDD=4V,VGS=13V,ID=3.8A, RG=1.Ω;seetable9 VDD=4V,VGS=13V,ID=3.8A, RG=1.Ω;seetable9 VDD=4V,VGS=13V,ID=3.8A, RG=1.Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 4 nc VDD=4V,ID=3.8A,VGS=to1V Gate to drain charge Qgd 5 nc VDD=4V,ID=3.8A,VGS=to1V Gate charge total Qg 18 nc VDD=4V,ID=3.8A,VGS=to1V Gate plateau voltage Vplateau 5.2 V VDD=4V,ID=3.8A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 5
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=3.8A,Tj=25 C Reverse recovery time trr 158 ns Reverse recovery charge Qrr 1.1 µc Peak reverse recovery current Irrm 14.5 A VR=4V,IF=2A,diF/dt=1A/µs; see table 8 VR=4V,IF=2A,diF/dt=1A/µs; see table 8 VR=4V,IF=2A,diF/dt=1A/µs; see table 8 6
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 6 Diagram2:Safeoperatingarea 1 2 5 4 1 1 1 1 µs 1 µs 1 µs Ptot[W] 3 ID[A] 1 1 1 ms 1 ms 2 1 2 DC 1 1 3 25 5 75 1 125 15 TC[ C] Ptot=f(TC) 1 4 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 2 Diagram4:Max.transientthermalimpedance 1 1 1 1 1 µs 1 µs.5 ID[A] 1 1 1 1 2 1 µs 1 ms 1 ms DC ZthJC[K/W] 1 1 1.2.1.5.2.1 single pulse 1 3 1 4 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 7
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 5 3 2 V 2 V 4 8 V 1 V 25 8 V 1 V 3 7 V 2 6 V 7 V ID[A] ID[A] 15 2 5.5 V 6 V 1 1 5.5 V 5 5 V 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 1. 5.5 V 6 V Diagram8:Drainsourceonstateresistance 3. 2.5 6.5 V RDS(on)[Ω].7 7 V 1 V 2 V RDS(on)[normalized] 2. 1.5 1..5.4 5 1 15 2 25 3 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS. 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=3.8A;VGS=1V 8
Diagram9:Typ.transfercharacteristics 5 Diagram1:Typ.gatecharge 12 4 25 C 1 8 12 V 4 V 3 15 C ID[A] VGS[V] 6 2 4 1 2 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 1 15 2 25 Qgate[nC] VGS=f(Qgate);ID=3.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 Diagram12:Avalancheenergy 4 3 1 1 IF[A] 125 C 25 C EAS[mJ] 2 1 1 1 1..2.4.6.8 1. 1.2 1.4 1.6 1.8 VSD[V] IF=f(VSD);parameter:Tj 25 5 75 1 125 15 Tj[ C] EAS=f(Tj);ID=2.7A;VDD=5V 9
Diagram13:Drainsourcebreakdownvoltage 69 Diagram14:Typ.capacitances 1 5 68 67 66 1 4 65 64 63 1 3 Ciss VBR(DSS)[V] 62 61 6 59 C[pF] 1 2 Coss 58 57 1 1 56 55 Crss 54 5 25 25 5 75 1 125 15 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1 1 2 3 4 5 VDS[V] C=f(VDS);VGS=V;f=25kHz Diagram15:Typ.Cossstoredenergy 3 2 Eoss[µJ] 1 1 2 3 4 5 VDS[V] Eoss=f(VDS) 1
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 11
12 6VCoolMOSªP7PowerTransistor 6PackageOutlines 2.5 REVISION 6 52216 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm 2.5 DOCUMENT NO. Z8B3328 MILLIMETERS 4.57 (BSC) 2.29 (BSC) L4 D N H E1 e1 e E D1 L3 1.18.51.89 5.2 9.4 6.35 4.32 5.97 3 b3 A DIM b2 c b c2 A1 4,95 MIN 2.16.64.46.65.4..46.2.35.198.25.185.235.37 1.78 1.2 5.21 5.84 6.22 6.73 1.27 1.48.18 (BSC).9 (BSC) 3.7.25.4.23.265.5.245.413.195.85.25.18.26.16. 5.5 MAX 2.41.15 1.15.61.89.98 INCHES MIN.217 MAX.6.95.35.24.45.39 L Figure1OutlinePGTO2523,dimensionsinmm/inches
7AppendixA Table11RelatedLinks IFXCoolMOSP7Webpage:www.infineon.com IFXCoolMOSP7applicationnote:www.infineon.com IFXCoolMOSP7simulationmodel:www.infineon.com IFXDesigntools:www.infineon.com 13
RevisionHistory Revision:21832,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 217518 Release of final version 2.1 21832 Updated diagram scalings; Nomenclature of product qualification grade was changed, new revision of package outlines TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14