MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS ª 5PowerTransistor,8V DataSheet Rev.2. Final PowerManagement&Multimarket
1Description D²PAK Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) Nchannel,normallevel 1%avalanchetested Pbfreeplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplications HalogenfreeaccordingtoIEC61249221 Table1KeyPerformanceParameters Parameter Value Unit VDS 8 V RDS(on),max 3.1 mω ID 12 A Qoss 82 nc QG(V..1V) 69 nc Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks PGTO 2633 31N8N5 1) JSTD2 and JESD22 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Package Outlines....................................................................... 11 Revision History........................................................................ 12 Disclaimer............................................................................ 12 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID 12 116 A TC=25 C TC=1 C Pulsed drain current 1) ID,pulse 48 A TC=25 C Avalanche energy, single pulse 2) EAS 186 mj ID=1A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 167 W TC=25 C Operating and storage temperature Tj,Tstg 55 175 C IEC climatic category; DIN IEC 681: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC.7.9 K/W Thermal resistance, junction ambient, minimal footprint RthJA 62 K/W Thermal resistance, junction ambient, 6 cm 2 cooling area 3) RthJA 4 K/W Soldering temperature, wave and reflow soldering are allowed Tsold 26 C reflow MSL1 1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 4
4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2.2 3. 3.8 V VDS=VGS,ID=18µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=8V,VGS=V,Tj=25 C VDS=8V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance 1) RG 1.5 2.3 Ω 2.7 3.6 3.1 4.1 mω VGS=1V,ID=1A VGS=6V,ID=5A Transconductance gfs 76 152 S VDS >2 ID RDS(on)max,ID=1A Table5Dynamiccharacteristics 1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 48 624 pf VGS=V,VDS=4V,f=1MHz Output capacitance Coss 79 13 pf VGS=V,VDS=4V,f=1MHz Reverse transfer capacitance Crss 36 63 pf VGS=V,VDS=4V,f=1MHz Turnon delay time td(on) 18 ns Rise time tr 18 ns Turnoff delay time td(off) 37 ns Fall time tf 12 ns VDD=4V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=4V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=4V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=4V,VGS=1V,ID=1A, RG,ext=1.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 24 nc VDD=4V,ID=1A,VGS=to1V Gate to drain charge 1) Qgd 15 23 nc VDD=4V,ID=1A,VGS=to1V Switching charge Qsw 26 nc VDD=4V,ID=1A,VGS=to1V Gate charge total 1) Qg 69 87 nc VDD=4V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 5. V VDD=4V,ID=1A,VGS=to1V Gate charge total, sync. FET Qg(sync) 6 nc VDS=.1V,VGS=to1V Output charge 1) Qoss 82 11 nc VDD=4V,VGS=V 1) Defined by design. Not subject to production test. 2) See Gate charge waveforms for parameter definition 5
Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continous forward current IS 12 A TC=25 C Diode pulse current IS,pulse 48 A TC=25 C Diode forward voltage VSD.94 1.2 V VGS=V,IF=1A,Tj=25 C Reverse recovery time 1) trr 73 146 ns VR=4V,IF=1A,diF/dt=1A/µs Reverse recovery charge 1) Qrr 166 332 nc VR=4V,IF=1A,diF/dt=1A/µs 1) Defined by design. Not subject to production test. 6
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 2 Diagram2:Draincurrent 14 16 12 1 Ptot[W] 12 8 ID[A] 8 6 4 4 2 5 1 15 2 TC[ C] Ptot=f(TC) 5 1 15 2 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 1 µs Diagram4:Max.transientthermalimpedance 1 1 2 1 µs 1 µs.5.2 ID[A] 1 1 1 ms 1 ms ZthJC[K/W] 1 1.1.5.2 1 DC.1 single pulse 1 1 1 1 1 1 1 1 2 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 7
Diagram5:Typ.outputcharacteristics 48 44 1 V 7 V 4 Diagram6:Typ.drainsourceonresistance 6 5 V 5.5 V 6 V 5 36 ID[A] 32 28 24 2 6 V 5.5 V RDS(on)[mΩ] 4 3 7 V 1 V 16 2 12 8 5 V 1 4 1 2 3 4 5 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 1 2 3 4 5 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 4 Diagram8:Typ.forwardtransconductance 2 35 3 15 25 ID[A] 2 gfs[s] 1 15 1 5 5 175 C 25 C 2 4 6 8 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 4 8 12 16 ID[A] gfs=f(id);tj=25 C 8
Diagram9:Drainsourceonstateresistance 7 Diagram1:Typ.gatethresholdvoltage 4. 6 3.5 5 3. 18 µa RDS(on)[mΩ] 4 3 max typ VGS(th)[V] 2.5 2. 1.5 18 µa 2 1. 1.5 6 2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=1A;VGS=1V. 6 2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances 1 4 Ciss Coss 1 3 Diagram12:Forwardcharacteristicsofreversediode 1 3 25 C 175 C 25 C, max 175 C, max 1 2 C[pF] IF[A] 1 2 Crss 1 1 1 1 2 4 6 8 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 2. 2.5 VSD[V] IF=f(VSD);parameter:Tj 9
Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge 1 8 4 V 1 2 IAV[A] 25 C 1 C VGS[V] 6 4 2 V 6 V 1 1 15 C 2 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 2 4 6 8 Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 9 Gate charge waveforms 85 VBR(DSS)[V] 8 75 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1
6PackageOutlines Figure1OutlinePGTO2633,dimensionsinmm/inches 11
RevisionHistory Revision:2141217,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 2141217 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 214InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 12