N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D D D D S S S G DFN5x6A-8_EP (5,6,7,8) DDDD Pin 1 Applications (4) G Power Management in Desktop Computer or DC/DC Converters. S S S ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information SM4377NS Assembly Material Handling Code Temperature Range Package Code Package Code KP : DFN5x6A-8_EP Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM4377NS KP : SM4377 XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 15 C T STG Storage Temperature Range -55 to 15 C I S Diode Continuous Forward Current 3 A I DP I D a P D Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation T C =25 C 12 T C = C 85 T C =25 C 5* T C = C 35 T C =25 C 32 T C = C 12.8 R qjc Thermal Resistance-Junction to Case Steady State 3.9 C/W I D b P D b R qja b I AS c E AS c Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient Avalanche Current, Single pulse Avalanche Energy, Single pulse T A =25 C 12.8 T A =7 C.2 T A =25 C 1.73 T A =7 C 1.11 t s 28 Steady State 72 L=.1mH 25 L=.3mH 19 L=.5mH 14 L=.1mH 31 L=.3mH 54 L=.5mH 5 Note a:* Current limited by bond wire. Note b:surface Mounted on 1in 2 pad area, t =999sec. Note c:uis tested and pulse width limited by maximum junction temperature 15 o C (initial temperature T j =25 o C). V A A W A W C/W A mj 2
Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25mA 3 - - V BV DSSt I DSS Drain-Source Breakdown Voltage (transient) Zero Gate Voltage Drain Current V GS =V, I D(aval) =A T case =25 C, t transient =ns 34 - - V V DS =24V, V GS =V - - 1 T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25mA 1.5 1.8 2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± na R DS(ON) d Drain-Source On-state Resistance V GS =V, I DS =3A - 5.6 7 T J =125 C - 8.4 - V GS =4.5V, I DS =15A - 7.4 9.6 Gfs Forward Transconductance V DS =5V, I DS =3A - 7 - S Diode Characteristics V SD d t rr Diode Forward Voltage I SD =15A, V GS =V -.85 1.1 V Reverse Recovery Time - 2 - t a Charge Time - 11 - I DS =15A, dl SD /dt=a/ms t b Discharge Time - 9 - Q rr Reverse Recovery Charge - - nc Dynamic Characteristics e R G Gate Resistance V GS =V,V DS =V,F=1MHz - 1 - W C iss Input Capacitance V GS =V, 98 118 14 C oss Output Capacitance V DS =15V, 158 19 228 C rss Reverse Transfer Capacitance Frequency=1.MHz 9 115 14 t d(on) Turn-on Delay Time - 11 2 t r Turn-on Rise Time V DD =15V, R L =15W, - 12 22 I DS =1A, V GEN =V, t d(off) Turn-off Delay Time R G =6W - 36 6 t f Turn-off Fall Time - 19 Gate Charge Characteristics e Q g Q g Total Gate Charge Total Gate Charge V DS =15V, V GS =4.5V, I DS =3A - 12-2 24 Q gth Threshold Gate Charge V DS =15V, V GS =V, - 2.2 2.7 Q gs Gate-Source Charge I DS =3A - 3.5 4.1 Q gd Gate-Drain Charge - 4.2 4.7 Note d:pulse test ; pulse width 3ms, duty cycle 2%. Note e:guaranteed by design, not subject to production testing. ma mw ns pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 35 6 3 5 Ptot - Power (W) 25 2 15 ID - Drain Current (A) 4 3 2 5 T C =25 o C 2 4 6 8 12 14 16 T C =25 o C,V G =V 2 4 6 8 12 14 16 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) ID - Drain Current (A) Safe Operation Area 4 1ms ms ms 1 1s DC T C =25 O C.1.1.1 1 VDS - Drain - Source Voltage (V) Rds(on) Limit Normalized Transient Thermal Resistance 2 1.1.1 Thermal Transient Impedance.1.2.5 Single Pulse.1.2 Duty =.5 Mounted on 1in 2 pad R qja :72 o C/W 1E-3 1E-4 1E-3.1.1 1 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 12 14 ID - Drain Current (A) 8 6 4 2 V GS = 4.5,5,6,7,8,9,V 4V 3.5V 3V RDS(ON) - On - Resistance (mw) 12 8 6 4 V GS =4.5V V GS =V 2.5V..5 1. 1.5 2. 2.5 3. VDS - Drain - Source Voltage (V) 2 2 4 6 8 12 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 3 I DS =3A 1.6 I DS =25mA RDS(ON) - On - Resistance (mw) 25 2 15 5 Normalized Threshold Vlotage 1.4 1.2 1..8.6.4 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 125 15 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2. 1.8 V GS = V I DS = 3A Normalized On Resistance 1.6 1.4 1.2 1..8.6 IS - Source Current (A) 1 T j =15 o C T j =25 o C.4 R ON @T j =25 o C: 5.6mW.2-5 -25 25 5 75 125 15 Tj - Junction Temperature ( C).1..2.4.6.8 1. 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 16 14 Frequency=1MHz 9 V DS = 15V I DS = 3A C - Capacitance (pf) 12 8 6 4 2 Crss Coss Ciss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 5 15 2 25 3 VDS - Drain - Source Voltage (V) 4 8 12 16 2 QG - Gate Charge (nc) 6
Typical Operating Characteristics (Cont.) Transfer Characteristics 9 8 I D - Drain Current (A) 7 6 5 4 3 2 T j =125 o C T j =25 o C T j =-55 o C..5 1. 1.5 2. 2.5 3. 3.5 4. V GS - Gate-Source Voltage (V) 7
Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IAS tp IL.1W VDD EAS tav Switching Time Test Circuit and Waveforms VDS DUT RD VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 8
Disclaimer Sinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs. However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 9
Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness 183 C 6-15 seconds Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, A8 Hrs, % of VGS max @ Tjmax PCT JESD-22, A2 168 Hrs, %RH, 2atm, 121 C TCT JESD-22, A4 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56358 11