MOSFET OptiMOS TM PowerMOSFET,3V Powerstage5x6 Features DualNchannelOptiMOS MOSFET Optimizedforcleanswitching 1%avalanchetested Superiorthermalresistance Optimizedforwirelesscharger QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61249221 Table1KeyPerformanceParameters Parameter Value Unit VDS 3 V RDS(on),max 5 mω ID 17 A QOSS 8.6 nc QG(V..4.5V) 6.7 nc Type/OrderingCode Package Marking RelatedLinks PGTISON8 993ND 1) JSTD2 and JESD22 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Package Outlines....................................................................... 1 Revision History........................................................................ 11 Trademarks........................................................................... 11 Disclaimer............................................................................ 11 2
1Maximumratings atta=25 C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID Pulsed drain current 1) ID,pulse 68 A TA=25 C 17 1 A VGS=1V,TA=25 C VGS=1V,TA=1 C Avalanche energy, single pulse EAS 14 mj ID=2A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 2.5 W TA=25 C,RthJA=5K/W 1) Operating and storage temperature Tj,Tstg 55 15 C IEC climatic category; DIN IEC 681: 55/15/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case, bottom Thermal resistance, junction case, top RthJC 4.2 K/W RthJC 2 K/W Device on PCB, 6 cm 2 cooling area 2) RthJA 5 K/W 1) See Diagram 3 for more detailed information. 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3
3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 3 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 1.2 2. V VDS=VGS,ID=25µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=3V,VGS=V,Tj=25 C VDS=3V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance 1) RG 1.3 2.6 5.2 Ω 5.6 4.2 7 5 mω VGS=4.5V,ID=7A VGS=1V,ID=7A Transconductance gfs 24 48 S VDS >2 ID RDS(on)max,ID=11A Table5Dynamiccharacteristics Parameter Symbol Unit Note/TestCondition Input capacitance 1) Ciss 87 12 pf VGS=V,VDS=15V,f=1MHz Output capacitance 1) Coss 33 44 pf VGS=V,VDS=15V,f=1MHz Reverse transfer capacitance Crss 49 pf VGS=V,VDS=15V,f=1MHz Turnon delay time td(on) 3.6 ns Rise time tr 3.8 ns Turnoff delay time td(off) 17 ns Fall time tf 3. ns VDD=15V,VGS=1V,ID=7A, RG,ext=1.6Ω VDD=15V,VGS=1V,ID=7A, RG,ext=1.6Ω VDD=15V,VGS=1V,ID=7A, RG,ext=1.6Ω VDD=15V,VGS=1V,ID=7A, RG,ext=1.6Ω Table6Gatechargecharacteristics 2) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 2.1 nc VDD=15V,ID=7A,VGS=to4.5V Gate charge at threshold Qg(th) 1.4 nc VDD=15V,ID=7A,VGS=to4.5V Gate to drain charge Qgd 2. nc VDD=15V,ID=7A,VGS=to4.5V Switching charge Qsw 2.7 nc VDD=15V,ID=7A,VGS=to4.5V Gate charge total Qg 6.7 nc VDD=15V,ID=7A,VGS=to4.5V Gate plateau voltage Vplateau 2.4 V VDD=15V,ID=7A,VGS=to4.5V Gate charge total 1) Qg 13 18 nc VDD=15V,ID=7A,VGS=to1V Gate charge total, sync. FET Qg(sync) 5.4 nc VDS=.1V,VGS=to4.5V Output charge 1) Qoss 8.6 11 nc VDD=15V,VGS=V 1) Defined by design. Not subject to production test 2) See Gate charge waveforms for parameter definition 4
Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS 2.5 A TA=25 C Diode pulse current IS,pulse 68 A TA=25 C Diode forward voltage VSD.76 1.1 V VGS=V,IF=2.5A,Tj=25 C Reverse recovery charge Qrr 5 nc VR=15V,IF=IS,diF/dt=4A/µs 5
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 3 Diagram2:Draincurrent 2 15 2 Ptot[W] 1 1 5 4 8 12 16 TA[ C] Ptot=f(TA) 4 8 12 16 TA[ C] ID=f(TA);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 2 1 2 1 1 1 µs 1 µs 1 µs 1 1.5.2.1 1 1 1 DC 1 ms 1 ms ZthJA[K/W] 1.5.2.1 single pulse 1 1 1 2 1 3 1 1 1 1 1 1 2 VDS[V] ID=f(VDS);TA=25 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 1 1 1 2 1 3 tp[s] ZthJA=f(tp);parameter:D=tp/T 6
Diagram5:Typ.outputcharacteristics 25 Diagram6:Typ.drainsourceonresistance 1 2 1 V 8 V 5 V 4.5 V 8 3.3 V 15 1 RDS(on)[mΩ] 6 4 4.5 V 5 V 8 V 1 V 3.3 V 5 2 1 2 3 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 1 15 2 RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 25 Diagram8:Typ.forwardtransconductance 16 2 12 15 gfs[s] 8 1 5 4 15 C 25 C 1 2 3 4 5 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 2 4 6 8 1 gfs=f(id);tj=25 C 7
Diagram9:Drainsourceonstateresistance 7 Diagram1:Typ.gatethresholdvoltage 2.5 6 2. 5 RDS(on)[mΩ] 4 3 typ VGS(th)[V] 1.5 1. 2.5 1 6 2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=7A;VGS=1V. 6 2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;ID=25µA Diagram11:Typ.capacitances 1 4 Diagram12:Forwardcharacteristicsofreversediode 1 3 25 C 15 C 1 3 Ciss 1 2 C[pF] Coss IF[A] 1 1 1 2 Crss 1 1 1 5 1 15 2 25 VDS[V] C=f(VDS);VGS=V;f=1MHz 1 1..5 1. 1.5 VSD[V] IF=f(VSD);parameter:Tj 8
Diagram13:Avalanchecharacteristics 1 2 Diagram14:Typ.gatecharge 12 1 8 6 V 15 V 24 V IAV[A] 1 1 1 C 25 C VGS[V] 6 125 C 4 2 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 4 8 12 16 Qgate[nC] VGS=f(Qgate);ID=7Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 34 Gate charge waveforms 32 3 VBR(DSS)[V] 28 26 24 22 2 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9
5PackageOutlines Figure1OutlinePGTISON8,dimensionsinmm/inches 1
RevisionHistory Revision:216711,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 216711 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 216InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 11