MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. 600VCoolMOS C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². 1 D²PAK tab 2 3 Features Suitableforhardandsoftswitching(PFCandhighperformanceLLC) IncreasedMOSFETdv/dtruggednessto120V/ns IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Gate Pin 1 Drain Pin 2, Tab Benefits IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency Enablinghighersystemefficiencybylowerswitchinglosses Increasedpowerdensitysolutionsduetosmallerpackages Suitableforapplicationssuchasserver,telecomandsolar Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto loweossandqg Source Pin 3 Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 40 mω Qg.typ 107 nc ID,pulse 211 A ID,continuous @ Tj<150 C 73 Eoss@400V 12.6 µj Body diode di/dt 450 A/µs A Type/OrderingCode Package Marking RelatedLinks PGTO 263 60C7040 see Appendix A 1 Rev.2.0,20160301
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 13 Revision History........................................................................ 14 Trademarks........................................................................... 14 Disclaimer............................................................................ 14 2 Rev.2.0,20160301
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 50 32 A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 211 A TC=25 C Avalanche energy, single pulse EAS 249 mj ID=7.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 1.24 mj ID=7.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS 7.4 A MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V Gate source voltage (static) VGS 20 20 V static; Gate source voltage (dynamic) VGS 30 30 V AC (f>1 Hz) Power dissipation Ptot 227 W TC=25 C Storage temperature Tstg 55 150 C Operating junction temperature Tj 55 150 C Mounting torque n.a. Ncm Continuous diode forward current IS 50 A TC=25 C Diode pulse current 2) IS,pulse 211 A TC=25 C Reverse diode dv/dt 3) dv/dt 20 V/ns VDS=0...400V,ISD<=11.4A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 450 A/µs VDS=0...400V,ISD<=11.4A,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch 3 Rev.2.0,20160301
2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.55 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wave & reflow soldering allowed RthJA 35 45 C/W Tsold 260 C reflow MSL1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 4 Rev.2.0,20160301
3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.24mA Zero gate voltage drain current IDSS 10 1 µa VDS=600,VGS=0V,Tj=25 C VDS=600,VGS=0V,Tj=150 C Gatesource leakage current IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) 0.034 0.077 0.040 Ω VGS=10V,ID=24.9A,Tj=25 C VGS=10V,ID=24.9A,Tj=150 C Gate resistance RG 0.77 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 4340 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 85 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 158 pf VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) 1640 pf ID=constant,VGS=0V,VDS=0...400V Turnon delay time td(on) 18.5 ns Rise time tr 11 ns Turnoff delay time td(off) 81 ns Fall time tf 3.2 ns VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 22 nc VDD=400V,ID=24.9A,VGS=0to10V Gate to drain charge Qgd 36 nc VDD=400V,ID=24.9A,VGS=0to10V Gate charge total Qg 107 nc VDD=400V,ID=24.9A,VGS=0to10V Gate plateau voltage Vplateau 5.0 V VDD=400V,ID=24.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 5 Rev.2.0,20160301
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=24.9A,Tj=25 C Reverse recovery time trr 460 ns Reverse recovery charge Qrr 9.2 µc Peak reverse recovery current Irrm 40 A VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 6 Rev.2.0,20160301
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 250 Diagram2:Safeoperatingarea 10 3 1 µs 10 µs 100 µs 200 150 10 2 10 1 1 ms 10 ms DC Ptot[W] ID[A] 10 0 100 10 1 50 10 2 0 0 25 50 75 100 125 150 TC[ C] Ptot=f(TC) 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance 10 0 100 µs 10 µs 1 µs 10 2 10 1 1 ms 10 ms DC 0.5 ID[A] 10 0 ZthJC[K/W] 10 1 0.2 0.1 10 1 0.05 10 2 0.02 0.01 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 10 2 single pulse 10 5 10 4 10 3 10 2 10 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,20160301
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 350 250 300 250 200 10 V 20 V 8 V 7 V 200 150 20 V 10 V 8 V 7 V 6 V ID[A] 150 6 V ID[A] 100 5.5 V 100 5.5 V 50 5 V 50 5 V 4.5 V 4.5 V 0 0 5 10 15 20 VDS[V] 0 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 0.13 5.5 V 6.5 V 0.12 0.11 6 V 7 V 10 V Diagram8:Drainsourceonstateresistance 0.10 0.09 0.08 0.07 RDS(on)[Ω] 0.10 0.09 20 V RDS(on)[Ω] 0.06 0.05 98% typ 0.04 0.08 0.03 0.07 0 20 40 60 80 100 120 140 160 180 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0.02 50 25 0 25 50 75 100 125 150 Tj[ C] RDS(on)=f(Tj);ID=24.9A;VGS=10V 8 Rev.2.0,20160301
Diagram9:Typ.transfercharacteristics 350 Diagram10:Typ.gatecharge 12 120 V 300 25 C 10 400 V 250 8 200 ID[A] 150 150 C VGS[V] 6 100 4 50 2 0 0 2 4 6 8 10 12 VGS[V] ID=f(VGS);VDS=20V;parameter:Tj 0 0 20 40 60 80 100 120 Qgate[nC] VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 Diagram12:Avalancheenergy 250 225 200 10 1 125 C 25 C 175 150 IF[A] EAS[mJ] 125 100 10 0 75 50 25 10 1 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 VSD[V] IF=f(VSD);parameter:Tj 0 25 50 75 100 125 150 Tj[ C] EAS=f(Tj);ID=7.4A;VDD=50V 9 Rev.2.0,20160301
Diagram13:Drainsourcebreakdownvoltage 700 Diagram14:Typ.capacitances 10 5 680 660 10 4 Ciss 640 VBR(DSS)[V] 620 600 C[pF] 10 3 10 2 Coss 580 560 10 1 540 Crss 520 60 30 0 30 60 90 120 150 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 10 0 0 100 200 300 400 VDS[V] C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 14 12 10 Eoss[µJ] 8 6 4 2 0 0 100 200 300 400 VDS[V] Eoss=f(VDS) 10 Rev.2.0,20160301
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11 Rev.2.0,20160301
600V CoolMOSª C7 Power Transistor 6 Package Outlines Figure 1 Outline PGTO 263, dimensions in mm/inches 12 Rev. 2.0, 20160301
600V CoolMOSª C7 Power Transistor 7 Appendix A Table 11 Related Links IFX CoolMOSTM C7 Webpage: www.infineon.com IFX CoolMOSTM C7 application note: www.infineon.com IFX CoolMOSTM C7 simulation model: www.infineon.com IFX Design tools: www.infineon.com 13 Rev. 2.0, 20160301
600V CoolMOSª C7 Power Transistor Revision History Revision: 20160301, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20160301 Release of final version Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq, TRENCHSTOP, TriCore. Trademarks updated August 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.0, 20160301