BUL38D. High voltage fast-switching NPN power transistor. Features. Applications. Description

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High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness Fully characterized at 125 C Integrated antiparallel collector-emitter diode Applications Electronic transformers for halogen lamps Switch mode power supplies Description The is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Figure 1. TO-220 1 2 3 Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging A or B TO-220 Tube 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. June 2009 Doc ID 7176 Rev 3 1/10 www.st.com 10

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V BE = 0) 800 V V CEO Collector-emitter voltage (I B = 0) 450 V V EBO Emitter-base voltage (I C = 0) 9 V I C Collector current 5 A I CM Collector peak current (t P < 5 ms) 10 A I B Base current 2 A I BM Base peak current (t P < 5 ms) 4 A P tot Total dissipation at T c 25 C 80 W T stg Storage temperature -65 to 150 C T J Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case max 1.56 C/W R thja Thermal resistance junction-ambient max 62.5 C/W 2/10 Doc ID 7176 Rev 3

Electrical characteristics 2 Electrical characteristics (T case = 25 C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CES I CEO V CEO(sus) (1) V EBO V CE(sat) (1) V BE(sat) (1) h FE (1)(2) t s t f t s t f t s t f Collector cut-off current (V BE = 0) Collector cut-off current (I B =0) Collector-emitter sustaining voltage (I B = 0) Emitter-base voltage (I C = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Resistive load Storage time Fall time Inductive load Storage time Fall time Inductive load Storage time Fall time 1. Pulsed duration = 300 µs, duty cycle 1.5%. V CE = 800 V V CE = 800 V T c = 125 C 100 500 µa µa V CE = 450 V 250 µa I C =100 ma 450 V I E = 10 ma 9 V I C = 1 A I B = 0.2 A I C = 2 A _ I B = 0.4 A I C = 3 A I B = 0.75 A I C = 1 A I B = 0.2 A I C = 2 A _ I B = 0.4 A I C = 10 ma I C = 0.5 A I C = 2 A Group A Group B V CE = 5 V V CE = 5 V V CE = 5 V V CC = 150 V I C = 2.5 A I B(on) = -I B(off) = 0.5 A t P = 30 µs I C = 2 A I B(on) = 0.4 A V BE(off) = -5 V R BB(off) =0 V CL = 250 V L = 200 µh I C = 2 A I B(on) = 0.4 A V BE(off) = -5 V R BB(off) =0 V CL = 250 V L = 200 µh T C = 125 C 2. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery details. 10 13 22 0.5 0.7 1.1 1.1 1.2 60 23 32 1 2.2 0.8 1 55 1.3 100 1.8 100 V F Diode forward voltage I F = 2 A 1.5 V V V V V V µs µs µs ns µs ns Doc ID 7176 Rev 3 3/10

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curves Figure 4. Output characteristics Figure 5. Reverse biased safe operating area Figure 6. DC current gain (V CE = 1.5 V) Figure 7. DC current gain (V CE = 5 V) 4/10 Doc ID 7176 Rev 3

Electrical characteristics Figure 8. Collector-emitter saturation Voltage Figure 9. Base-emitter saturation voltage Figure 10. Inductive load storage time Figure 11. Inductive load fall time Doc ID 7176 Rev 3 5/10

Electrical characteristics 2.2 Test circuits Figure 12. Inductive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier Figure 13. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 6/10 Doc ID 7176 Rev 3

Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 7176 Rev 3 7/10

Package mechanical data TO-220 mechanical data Dim mm inch Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 8/10 Doc ID 7176 Rev 3

Revision history 4 Revision history Table 5. Document revision history Date Revision Changes 16-Jun-2004 2 Document migration, no content change. 23-Jun-2009 3 Updated TO-220 mechanical data. Doc ID 7176 Rev 3 9/10

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