UNISONIC TECHNOLOGIES CO., LTD 2A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N6L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * R DS(ON) < 5Ω @ = 1V, I D =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1 of 7 Copyright 214 Unisonic Technologies Co., Ltd
ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 2N6LL-TA3-T 2N6LG-TA3-T TO-22 G D S Tube 2N6LL-TF1-T 2N6LG-TF1-T TO-22F1 G D S Tube 2N6LL-TF2-T 2N6LG-TF2-T TO-22F2 G D S Tube 2N6LL-TF3-T 2N6LG-TF3-T TO-22F G D S Tube 2N6LL-TF3T-T 2N6LG-TF3T-T TO-22F3 G D S Tube 2N6LL-TM3-T 2N6LG-TM3-T TO-251 G D S Tube 2N6LL-TMA-T 2N6LG-TMA-T TO-251L G D S Tube 2N6LL-TMS-T 2N6LG-TMS-T TO-251S G D S Tube 2N6LL-TMS2-T 2N6LG-TMS2-T TO-251S2 G D S Tube 2N6LL-TMS4-T 2N6LG-TMS4-T TO-251S4 G D S Tube 2N6LL-TN3-R 2N6LG-TN3-R TO-252 G D S Tape Reel 2N6LL-TND-R 2N6LG-TND-R G D S Tape Reel 2N6LL-T2Q-T 2N6LG-T2Q-T TO-262 G D S Tube 2N6LL -T6-K 2N6LG-T6-K TO-126 G D S Bulk Note: Pin Assignment: G: Gate D: Drain S: Source MARKING TO-22 TO-22F TO-22F1 TO-22F2 TO-22F3 TO-251 TO-251L PACKAGE TO-251S TO-251S2 TO-251S4 TO-252 TO-262 MARKING TO-126 UNISONIC TECHNOLOGIES CO., LTD 2 of 7
ABSOLUTE MAXIMUM RATINGS (T C = 25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 6 V Gate-Source Voltage S ±3 V Avalanche Current (Note 2) I AR 2. A Drain Current Continuous I D 2. A Pulsed (Note 2) I DM 8. A Avalanche Energy Single Pulsed (Note 3) E AS 14 mj Repetitive (Note 2) E AR 4.5 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-22/TO-262 54 W TO-22F/TO-22F1 TO-22F3 23 W TO-22F2 25 W Power Dissipation TO-251/TO-251L P D TO-251S/TO-251S2 TO-251S4/TO-252 44 W TO-126 12.5 W Junction Temperature T J +15 С Ambient Operating Temperature T OPR -55 ~ +15 С Storage Temperature T STG -55 ~ +15 С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by T J 3. L=64mH, I AS =2.A, V DD =5V, R G =25 Ω, Starting T J = 25 C 4. I SD 2.4A, di/dt 2A/μs, V DD BV DSS, Starting T J = 25 C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-22/TO-22F TO-22F1/TO-22F2 TO-22F3/TO-262 62.5 С/W TO-251/TO-251L Junction to Ambient θ JA TO-251S/TO-251S2 1 С/W TO-251S4/TO-252 TO-126 132 С/W TO-22/TO-262 2.32 С/W TO-22F/TO-22F1 TO-22F3 5.5 С/W TO-22F2 5 С/W Junction to Case TO-251/TO-251L θ JC TO-251S/TO-251S2 TO-251S4/TO-252 2.87 С/W TO-126 1 С/W UNISONIC TECHNOLOGIES CO., LTD 3 of 7
ELECTRICAL CHARACTERISTICS (T J =25 С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS = V, I D = 25μA 6 V Drain-Source Leakage Current I DSS V DS = 6V, = V 1 μa Gate-Source Leakage Current Forward = 3V, V DS = V 1 na I GSS Reverse = -3V, V DS = V -1 na Breakdown Voltage Temperature Coefficient BV DSS / T J I D =25μA, Referenced to 25 C.4 V/ С ON CHARACTERISTICS Gate Threshold Voltage (TH) V DS =, I D = 25μA 2. 4. V Static Drain-Source On-State Resistance R DS(ON) = 1V, I D =1A 4.2 5. Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 3 35 pf V DS =25V, =V, Output Capacitance C OSS 3 5 pf f =1MHz Reverse Transfer Capacitance C RSS 7 1 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D (ON) 3 6 ns Turn-On Rise Time t R V DD =3V, I D =2.4A, R G =25Ω 25 6 ns Turn-Off Delay Time t D(OFF) (Note 1, 2) 7 9 ns Turn-Off Fall Time t F 3 6 ns Total Gate Charge Q G 3 4 nc V DS =48V, =1V, I D =2.4A Gate-Source Charge Q GS 8 nc (Note 1, 2) Gate-Drain Charge Q GD 1 nc DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage V SD = V, I SD = 2. A 1.4 V Continuous Drain-Source Current I SD 2. A Pulsed Drain-Source Current I SM 8. A Reverse Recovery Time t RR = V, I SD = 2.4A, 18 ns Reverse Recovery Charge Q RR di/dt = 1 A/μs (Note1).72 μc Notes: 1. Pulse Test: Pulse width 3μs, Duty cycle 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 4 of 7
TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS + - - L R G Driver V DD Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit (Driver) P.W. Period D= P. W. Period = 1V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 7
TEST CIRCUITS AND WAVEFORMS (Cont.) V DS 9% 1% t D(ON) t R t D(OFF) t F Switching Test Circuit Switching Waveforms 1V Q G Q GS Q GD Charge Gate Charge Test Circuit Gate Charge Waveform BV DSS I AS V DD I D(t) V DS(t) t p Time Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 7
TYPICAL CHARACTERISTICS 3 Drain Current vs. Drain-Source Breakdown Voltage 3 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µa) 25 2 15 1 Drain Current, ID (µa) 25 2 15 1 5 5 2 4 6 8 1 Drain-Source Breakdown Voltage, BV DSS (V) 1 2 3 4 5 Gate Threshold Voltage, V TH (V) Drain Current, ID (A) 1.2 1..8.6.4.2 Drain-Source On-State Resistance Characteristics =1V, I D =1A 2 4 6 8 1 Drain to Source Voltage, V DS (V) Coutinuous Drain-Soarce Current, ISD (A) 2.4 2. 1.6 1.2.8.4 Coutinuous Drain-Soarce Current vs. Source to Drain Voltage.3.6.9 1.2 1.5 Source to Drain Voltage, V SD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7