MJD3/3C MJD3/3C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP3 and TIP3C D-PAK I-PAK.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage : MJD3 : MJD3C 40 00 CEO Collector-Emitter oltage : MJDH3 : MJD3C EBO Emitter-Base oltage 5 Collector Current (DC) 3 A P Collector Current (Pulse) A I B Base Current A P C Collector Dissipation (T C =25 C) 5 W Collector Dissipation (T a =25 C).56 W T J Junction Temperature 50 C T STG Storage Temperature - 65 ~ 50 C Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units CEO (sus) * Collector-Emitter Sustaining oltage : MJD3 : MJD3C EO Collector Cut-off Current : MJD3 : MJD3C ES Collector Cut-off Current : MJD3 : MJD3C * Pulse Test: PW 300µs, Duty Cycle 2% 40 00 = 30mA, I B = 0 40 00 CE = 40, I B = 0 CE = 60, I B = 0 CE = 40, BE = 0 CE = 00, BE = 0 I EBO Emitter Cut-off Current BE = 5, = 0 ma h FE * DC Current Gain CE = 4, = A CE = 4, = 3A 50 50 25 0 50 CE (sat) * Collector-Emitter Saturation oltage = 3A, I B = 375mA.2 BE (on) * Base-Emitter ON oltage CE = 4A, = 3A.8 f T Current Gain Bandwidth Product CE = 0, = 500mA 3 MHz 0 Fairchild Semiconductor Corporation Rev. A2, June 0
Typical Characteristics h FE, DC CURRENT GAIN 000 00 0 0.0 0. 0 CE = 2 BE(sat), CE(sat)[], SATURATION OLTAGE 0 0. BE(sat) CE(sat) 0.0 E-3 0.0 0. 0 IC IC = 0 IB MJD3/3C Figure. DC current Gain Figure 2. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage 000 t C = 0.I B Cob[pF], CAPACITANCE 00 0 t R, t D [µs], TURN ON TIME 0. t R, CC =30 t D, BE (off)=2 t R, CC =0 0. 0 00 CB[], COLLECTOR BASE OLTAGE 0.0 0. 0 Figure 3. Collector Capacitance Figure 4. Turn On Time tc = 0.IB 0 P (max) tf,tstg[µs], TURN OFF TIME 0. tstg tf, CC=30 tf, CC(off)=0 0. (max) DC ms 500µs 3 00µs 3C 0.0 0. 0 IC 0.0 0 00 000 CE [], COLLECTOR-EMITTER OLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating 0 Fairchild Semiconductor Corporation Rev. A2, June 0
Typical Characteristics (Continued) MJD3/3C P C [W], POWER DISSIPATION 5 0 5 0 0 25 50 75 00 25 50 75 T C [ o C], CASE TEMPERATURE Figure 7. Power Derating 0 Fairchild Semiconductor Corporation Rev. A2, June 0
Package Demensions D-PAK MJD3/3C 6.60 ±0. 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0. 2.30 ±0.0 0.50 ±0.0 0.60 ±0. 0.80 ±0. MAX0.96 2.30TYP [2.30±0.] 2.70 ±0. 9.50 ±0.30 6.0 ±0. 0.76 ±0.0 2.30TYP [2.30±0.] 6.0 ±0. 2.70 ±0. 9.50 ±0.30 0.89 ±0.0 0.9 ±0.0 6.60 ±0. (5.34) (5.04) (.50) (2XR0.25) (0.70) MIN0.55 0.50 ±0.0.02 ±0. 2.30 ±0. (0.0) (3.05) (0.90) (.00) 0.76 ±0.0 Dimensions in Millimeters 0 Fairchild Semiconductor Corporation Rev. A2, June 0
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