2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description

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Transcription:

Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Description The 2N2219AHR is a silicon planar epitaxial NPN transistors in TO-39 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-003 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails. Figure 1. TO-39 Internal schematic diagram Table 1. Device summary Order codes Package Lead finish Marking Type EPPL Packaging 2N2219AHR TO-39 Gold Solder Dip 520100301 520100302 2N2219AT1 TO-39 Gold 2N2219AT1 ESCC Flight Yes Strip pack Engineering model Strip pack January 2010 Doc ID 15294 Rev 2 1/8 www.st.com 8

Electrical ratings 2N2219AHR 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CBO Collector-base voltage (I E = 0) 75 V V CEO Collector-emitter voltage (I B = 0) 40 V V EBO Emitter-base voltage (I C = 0) 6 V I C Collector current 0.8 A P TOT Total dissipation at T amb 25 C Total dissipation at T c 25 C T STG Storage temperature -65 to 200 C T J Max. operating junction temperature 200 C 0.8 3 W W Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case max R thja Thermal resistance junction-ambient max 58 218 C/W C/W 2/8 Doc ID 15294 Rev 2

Electrical characteristics 2 Electrical characteristics T case = 25 C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO Collector cut-off current (I E = 0) V CB = 60 V V CB = 60 V T amb = 150 C 10 10 na µa I EBO V (BR)CBO V (1) (BR)CEO V (BR)EBO Emitter cut-off current (I C = 0) Collector-base breakdown voltage (I E = 0) Collector-emitter breakdown voltage (I B = 0) Emitter-base breakdown voltage (I C = 0) V EB = 3 V 10 na I C = 10 µa 75 V I C = 10 ma 40 V I E = 10 µa 6 V V CE(sat) (1) Collector-emitter saturation voltage I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma 0.3 1 V V V BE(sat) (1) Base-emitter saturation voltage I C = 150 ma I B = 15 ma 1.2 V h FE (1) DC current gain I C = 10 ma I C = 150 ma I C = 500 ma V CE = 10 V V CE = 10 V V CE = 10 V 75 100 40 300 I C = 10 ma V CE = 10 V T amb = -55 C 35 h fe Small signal current gain V CE = 20 V f = 100 MHz I C = 20 ma 2.5 C CBO Output capacitance (I E = 0) V CB = 10 V 100 khz f 1 MHz 8 pf t on Turn-on time V CC = 30 V I B1 = 15 ma I C = 150 ma 35 ns t off Turn-off time V CC = 30 V I C = 150 ma I B1 = -I B2 = 15 ma 300 ns 1. Pulsed duration = 300 µs, duty cycle 2% Doc ID 15294 Rev 2 3/8

Electrical characteristics 2N2219AHR 2.1 Test circuit Figure 2. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 4/8 Doc ID 15294 Rev 2

Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15294 Rev 2 5/8

Package mechanical data 2N2219AHR G D A H F E L B 6/8 Doc ID 15294 Rev 2

Revision history 4 Revision history Table 5. Document revision history Date Revision Changes 09-Jan-2009 1 Initial release 05-Jan-2010 2 Modified Table 1 on page 1 Doc ID 15294 Rev 2 7/8

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