SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S Top View Ordering Information: SUD5P3--E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - 3 V Gate-Source Voltage V GS ± 2 Continuous Drain Current b - 5 T A = C - 8 A Pulsed Drain Current M - Continuous Source Current (Diode Conduction) I S - 5 T C = 25 C 7 Maximum Power Dissipation b P D W b Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b R thja 3 C/W Maximum Junction-to-Case R thjc.8 Notes: a. Calculated Rating for, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR board, t s. Document Number: 7766 S-873-Rev. E, -Aug-8
SUD5P3- SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, = - 25 µa - 3 V Gate Threshold Voltage V GS(th) V DS = V GS, = - 25 µa -. - 3. Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± na V DS = - 3 V, V GS = V - Zero Gate Voltage Drain Current SS µa V DS = - 3 V, V GS = V, T J = 25 C - 5 On-State Drain Current a (on) Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V DS = - 5 V, V GS = - V - 5 V DS = - 5 V, V GS = -.5 V - 2 Drain-Source On-State Resistance a R DS(on) V GS = - V, = - 5 A, T J = 25 C.5 Ω V GS = - V, = - 5 A. V GS = -.5 V, = - 5 A.8 Forward Transconductance a g fs V DS = - 5 V, = - 5 A 2 S Dynamic b Input Capacitance C iss V GS = V, V DS = - 25 V, f = MHz 6 Total Gate Charge c Q g Output Capacitance C oss pf Reverse Transfer Capacitance C rss 7 9 5 Gate-Source Charge c Q gs V DS = - 5 V, V GS = - V, = - 5 A 2 nc Gate-Drain Charge c Q gd 6 Turn-On Delay Time c t d(on) 5 25 Rise Time c t r V DD = - 5 V, R L =.33 Ω 375 55 Turn-Off Delay Time c t d(off) - 5 A, V GEN = - V, R G = 2. Ω 2 ns Fall Time c t f 25 Source-Drain Diode Ratings and Characteristic T C = 25 C Pulsed Current I SM A Diode Forward Voltage a V SD I F = - 5 A, V GS = V..5 V Source-Drain Reverse Recovery Time t rr I F = - 5 A, di/dt = A/µs 55 ns A Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Document Number: 7766 S-873-Rev. E, -Aug-8
SUD5P3- TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 2 V GS =, 9, 8, 7 V 6 V 8 - Drain Current (A) 5 5 V V 6 T C = 25 C 5 3 V 2 6 8 Output Characteristics 8 2 25 C - 55 C 2 3 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5 T C = - 55 C - Transconductance (S) g fs 6 2 25 C 25 C - On-Resistance (Ω) R DS(on)..3.2. V GS =.5 V V GS = V 2 3 5 Transconductance. 2 6 8 On-Resistance vs. Drain Current C - Capacitance (pf) 8 6 2 C iss C oss - Gate-to-Source Voltage (V) V GS 2 6 2 8 V DS = 5 V = 5 A C rss 5 5 2 25 3 Capacitance 3 6 9 2 Q g - Total Gate Charge (nc) Gate Charge Document Number: 7766 S-873-Rev. E, -Aug-8 3
SUD5P3- TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2..6 V GS = V = 5 A R DS(on) - On-Resistance (Normalized).2.8 I S - Source Current (A) T J = 5 C T J = 25 C.. - 5-25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature THERMAL RATINGS 2 5.3.6.9.2.5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 2 8 - Drain Current (A) Limited by R DS(on)* Single Pulse, µs ms ms ms s 25 5 75 25 5 2 T A - Ambient Temperature ( C) Maximum Drain Current vs. Ambient Temperature.. *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area DC Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..2.5 Single Pulse. - -3-2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5 maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?7766. Document Number: 7766 S-873-Rev. E, -Aug-8
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