v3.218 HMC994A.5 WATT POWER AMPLIFIER, DC - 3 GHz Typical Applications The HMC994A is ideal for: Test Instrumentation Military & Space Fiber Optics Functional Diagram Features High P1dB Output Power: dbm High Psat Output Power: 3 dbm High Gain: 14 db High Output IP3: 39 dbm Supply Voltage: +1 V @ ma 5 Ohm Matched Input/Output Die Size: 2.75 x 1.45 x.1 mm General Description The HMC994A is a GaAs MMIC phemt Distributed Power Amplifier which operates between DC and 3 GHz. The amplifier provides 14 db of gain, +39 dbm output IP3 and + dbm of output power at 1 db gain compression while requiring ma from a +1 V supply. The HMC994A exhibits a slightly positive gain slope from 2 to GHz, making it ideal for EW, ECM, Radar and test equipment applications. With up to 39 dbm Output IP3 the HMC994A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HMC994A amplifier I/Os are internally matched to 5 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two. mm (1 mil) wire bonds of minimal length.31 mm (12 mils). Electrical Specifications, T A = + C, Vdd = +1 V, Vgg2 = +3.5 V, Idd = ma* Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 18 18 - - 3 GHz Gain 11.5 14.5 12 12.5.5 db Gain Flatness ±. ±.5 ±. db Gain Variation Over Temperature.4.5.1 db/ C Input Return Loss 13 db Output Return Loss 18 db Output Power for 1 db Compression (P1dB).5 27.5 dbm Saturated Output Power (Psat) 3 3 29 dbm Output Third Order Intercept (IP3) Pout / tone = +16dBm 39 36 36 dbm Noise Figure 3.5 3 3.5 db Supply Current (Idd) (Vdd= 1V, Vgg1= -.6V Typ.) ma Supply Voltage 8 1 11 8 1 11 8 1 11 V * Adjust Vgg1 between -2 to V to achieve ma typical, Vgg1 typical = -.6 V 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Gain & Return Loss Low Frequency Gain & Return Loss RESPONSE (db) 1 5-1 - - - 5 1 3 S21 S11 S Gain vs. Temperature GAIN (db) 18 16 14 12 1 8 6 5 1 3 RESPONSE (db) 1 5-1 - - -.1.1.1.1 1 S21 S11 S Gain vs. Vdd GAIN (db) 18 16 14 12 1 8 6 5 1 3 +8V +1V +11V Gain vs. Idd 18 Input Return Loss vs. Temperature GAIN (db) 16 14 12 1 8 RETURN LOSS (db) -1 - - 6 5 1 3-5 1 3 ma For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 2
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Input Return Loss vs. Vdd Input Return Loss vs. Idd RETURN LOSS (db) -1 - - - 5 1 3 +8V +1V +11V Output Return Loss vs. Temperature RETURN LOSS (db) -1 - - - 5 1 3 RETURN LOSS (db) -1 - - - 5 1 3 ma Output Return Loss vs. Vdd RETURN LOSS (db) -1 - - - 5 1 3 +8V +1V +11V Output Return Loss vs. Idd RETURN LOSS (db) -1 - - - 5 1 3 Reverse Isolation vs. Temperature ISOLATION (db) -1 - -3-4 -6-7 -8 5 1 3 ma 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Noise Figure vs. Temperature 1 Noise Figure vs Idd 1 NOISE FIGURE (db) 8 6 4 2 5 1 3 Low Frequency P1dB vs. Temperature P1dB (dbm) 3.3.6.9 1.2 1.5 NOISE FIGURE (db) 8 6 4 2 5 1 3 ma P1dB vs. Temperature P1dB (dbm) 3 5 1 3 Low Frequency P1dB vs. Vdd P1dB vs. Vdd 3 3 P1dB (dbm) P1dB (dbm).3.6.9 1.2 1.5 +8V +1V +11V 5 1 3 +8V +1V +11V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 4
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz P1dB vs. Idd Psat vs Temperature P1dB (dbm) 3 5 1 3 ma Psat vs. Vdd Psat (dbm) 3 5 1 3 +8V +1V +11V Psat (dbm) 3 5 1 3 Psat vs Idd Psat (dbm) 3 5 1 3 ma Power Compression @ 16 GHz 37 Gain & Power vs. Idd @ 16 GHz Pout(dBm), GAIN(dB), PAE(%) 16 12 8 4 5 34 3 31 295 5 Idd (ma) Gain (db), P1dB (dbm), Psat (dbm) 3 2 4 6 8 1 12 14 16 18 INPUT POWER (dbm) Pout Gain PAE 1 175 2 Vdd (V) GAIN P1dB Psat Idd 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Gain & Power vs Vdd @ 16 GHz Power Dissipation @ 85C 3.5 Gain (db), P1dB (dbm), Psat (dbm) 3 1 8 9 1 11 Vdd (V) GAIN P1dB Psat PAE @ Psat vs Temperature PAE (%) 4 3 1 5 5 1 3 POWER DISSIPATION (W) 3 2.5 2 1.5 1 4 8 12 16 4GHz 8GHz 12GHz INPUT POWER (dbm) 16GHz GHz GHz GHz Low Frequency OIP3 vs Temperature @ Pout/tone = +16dBm IP3 (dbm) 45 4 3 1.3.6.9 1.2 1.5 OIP3 vs. Temperature @ Pout/tone = +16dBm 45 Low Frequency OIP3 vs Vdd @ Pout/tone = +16dB 45 4 4 IP3 (dbm) 3 IP3 (dbm) 3 1 5 1 3 1.3.6.9 1.2 1.5 +8V +1V +11V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 6
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz OIP3 vs Vdd @ Pout/tone = +16dBm 45 OIP3 vs Idd @ Pout/tone = +16dBm 45 IP3 (dbm) 4 3 1 5 1 3 Output IM3 @ Vdd=8V IM3 (dbc) 9 8 7 6 5 4 3 1 +8V +1V +11V 2 4 6 8 1 12 14 16 18 2GHz 6GHz 1GHz Pout/TONE (dbm) 14GHz 18GHz GHz GHz 3GHz IP3 (dbm) 4 3 1 5 1 3 Output IM3 @ Vdd=1V IM3 (dbc) 9 8 7 6 5 4 3 1 ma 2 4 6 8 1 12 14 16 18 2GHz 6GHz 1GHz Pout/TONE (dbm) 14GHz 18GHz GHz GHz 3GHz Output IM3 @ Vdd=11V 9 Second Harmonics vs. Temperature @ Pout = +14 dbm 5 IM3 (dbc) 8 7 6 5 4 3 1 2 4 6 8 1 12 14 16 18 Pout/TONE (dbm) SECOND HARMONIC (dbc) 4 3 1 4 8 12 16 FREQUENCY(GHz) 2GHz 6GHz 1GHz 14GHz 18GHz GHz GHz 3GHz 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Second Harmonics vs. Vdd @ Pout = +14 dbm 5 Second Harmonics vs. Pout 5 SECOND HARMONIC (dbc) 4 3 1 4 8 12 16 FREQUENCY(GHz) +8V +1V +11V OIP2 vs. Temperature @ Pout/tone = +16dBm IP2 (dbm) 5 4 3 1 4 8 12 16 FREQUENCY(GHz) SECOND HARMONIC (dbc) 4 3 1 4 8 12 16 +4dBm +6dBm +8dBm FREQUENCY(GHz) +1dBm +12dBm +14dBm OIP2 vs. Vdd @ Pout/tone = +16dBm IP2 (dbm) 5 4 3 1 +16dBm 4 8 12 16 FREQUENCY(GHz) +8V +1V +11V OIP2 vs. Idd @ Pout/tone = +16dBm 5 4 IP2 (dbm) 3 1 4 8 12 16 FREQUENCY(GHz) ma For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 8
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Igg1 vs. Input Power.6 Igg2 vs. Input Power 2 Igg1 (ma).4.2 -.2 -.4 -.6 2 4 6 8 1 12 14 16 18 2GHz 6GHz 1GHz Input Power (dbm) 14GHz 18GHz GHz GHz 3GHz -.5 Idd vs. Vgg1 Representative of a Typical Device Idd(mA) Igg2 (ma) 1.5 1.5-1 2 4 6 8 1 12 14 16 18 2GHz 6GHz 1GHz 3 3 275 2 175 1 1 75 5 - -1.6-1.4-1.2-1 -.8 -.6 Vgg1(V) Input Power (dbm) 14GHz 18GHz GHz GHz 3GHz 9 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Absolute Maximum Ratings Reliabilty Information Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN) 12V Output Load VSWR 7:1 Continuous Pdiss (T= 85 C) (derate 4.3 mw/ C above 85 C) -3 to Vdc 2.5V min up to (Vdd - 5.5V) dbm 3.62 W Storage Temperature -65 to C Operating Temperature 5 to 85 C ESD Sensitivity (HBM) Outline Drawing Class B - Passed V Channel Temperature to Maintain 1 Million Hour MTTF Thermal Resistance (channel to die bottom) 175 C.8 C/W Stresses at or above those listed in the Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating condition for extended periods may affect product reliability. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the Packaging Information section on our website for die packaging dimensions. [2] For alternate packaging information contact Analog Devices Inc. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS.4 (.1) 3. TYPICAL BOND PAD IS.4 (.1) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.2 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 1
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN 2 VGG2 3 ACG1 4 ACG2 5 RFOUT & VDD 6 ACG3 7 ACG4 8 VGG1 This pad is DC coupled and matched to 5 Ohms. Blocking capacitor is required. Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For nominal operation +3.5V should be applied to Vgg2. Low frequency termination. Attach bypass capacitor per application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein.` RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitors per application circuit herein. Low frequency termination. Attach bypass capacitors per application circuit herein. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow MMIC Amplifier Biasing Procedure application note. Die Bottom GND Die bottom must be connected to RF/DC ground. 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 5 ma. NOTE 2: Optional capacitors to be used if part is to be operated below MHz. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 12
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Assembly Diagram 13 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v3.218.5 WATT POWER AMPLIFIER, DC - 3 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 5 Ohm Microstrip transmission lines on.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.4mm (1 mil) thick alumina thin film substrates must be used, the die should be raised.mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.12mm (4 mil) thick die to a.mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76mm to.2 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ).mm (.5 ) Thick Moly Tab RF Ground Plane Wire Bond.4mm (.1 ) Thick Alumina Thin Film Substrate Figure 2..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.127mm (.5 ) Thick Alumina Thin Film Substrate Figure 1. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/ gold tin preform is recommended with a work surface temperature of 5 C and a tool temperature of 5 C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 29 C. DO NOT expose the chip to a temperature greater than 3 C for more than seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 4-6 grams. DC bonds of.1 (. mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 4 grams and wedge bonds at 18- grams. All bonds should be made with a nominal stage temperature of C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (.31 mm). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 62-916 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 14