PD - 94008A IRFP250N HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Ease of Paraeing Simpe Drive Requirements G D S V DSS = 200V R DS(on) = 0.075Ω I D = 30A Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The TO-247 package is preferred for commercia-industria appications where higher power eves precude the use of TO-220 devices. The TO-247 is simiar but superior to the earier TO-28 package because of its isoated mounting hoe. TO-247AC Absoute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 30 I D @ T C = 0 C Continuous Drain Current, V GS @ V 2 A I DM Pused Drain Current 20 P D @T C = 25 C Power Dissipation 24 W Linear Derating Factor.4 W/ C V GS Gate-to-Source Votage ± 20 V E AS Singe Puse Avaanche Energy 35 mj I AR Avaanche Current 30 A E AR Repetitive Avaanche Energy 2 mj dv/dt Peak Diode Recovery dv/dt ƒ 8.6 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.7 R θcs Case-to-Sink, Fat, Greased Surface 0.24 C/W R θja Junction-to-Ambient 40 www.irf.com /7/04
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.26 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 0.075 Ω V GS = V, I D = 8A V GS(th) Gate Threshod Votage 2.0 4.0 V V DS = V GS, I D = 250µA g fs Forward Transconductance 7 S V DS = 50V, I D = 8A I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V na Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Tota Gate Charge 23 I D = 8A Q gs Gate-to-Source Charge 2 nc V DS = 60V Q gd Gate-to-Drain ("Mier") Charge 57 V GS = V, See Fig. 6 and 3 t d(on) Turn-On Deay Time 4 V DD = 0V t r Rise Time 43 I D = 8A ns t d(off) Turn-Off Deay Time 4 R G = 3.9Ω t f Fa Time 33 R D = 5.5Ω, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 259 V GS = 0V C oss Output Capacitance 35 pf V DS = 25V C rss Reverse Transfer Capacitance 83 ƒ =.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 30 (Body Diode) showing the A G I SM Pused Source Current integra reverse 20 (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 8A, V GS = 0V t rr Reverse Recovery Time 86 279 ns T J = 25 C, I F = 8A Q rr Reverse Recovery Charge.3 2.0 µc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. (See Fig. ) Starting T J = 25 C, L =.9mH R G = 25Ω, I AS = 8A. (See Figure 2) ƒ I SD 8A, di/dt 374A/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. 2 www.irf.com
I D, Drain-to-Source Current (A) 00 0 0. VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0.0 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 75 C T J = 25 C V DS= 50V 20µs PULSE WIDTH 0. 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 3.5 I D = 30A 3.0 2.5 2.0.5.0 0.5 V GS= V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRFP250N 5000 4000 3000 2000 00 Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V GS, Gate-to-Source Votage (V) 6 2 8 4 I D = 8A V DS= 60V V DS= 0V V DS= 40V 0 0 00 V DS, Drain-to-Source Votage (V) 0 0 20 40 60 80 0 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 00 0 T J = 75 C T J = 25 C V GS= 0 V 0. 0.2 0.4 0.6 0.8.0.2.4.6 V SD,Source-to-Drain Votage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms TC = 25 C TJ = 75 C ms Singe Puse 0 00 V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) I D, Drain Current (A) 35 35 30 30 25 25 20 20 5 5 5 5 0 0 25 50 75 0 25 50 75 25 50 T 75 0 25 50 75 C, Case Temperature ( C) T C, Case Temperature ( C) R D V DS V GS D.U.T. R G V Puse Width µs Duty Factor 0. % Fig a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f V - DD Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response(Z thjc ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 0.0 2. Peak T J=P DMx Z thjc TC 0.0000 0.000 0.00 0.0 0. t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case www.irf.com 5
5V V DS L DRIVER R G D.U.T IAS - V DD A 20V tp 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)DSS tp E AS, Singe Puse Avaanche Energy (mj) 800 600 400 200 TOP BOTTOM I D 7.3A 3A 8A 0 25 50 75 0 25 50 75 Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Appied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For N-Channe HEXFETS www.irf.com 7
TO-247AC Package Outine Dimensions are shown in miimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS SEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assemby ine position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 035H 56 57 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and quaified for the Automotive [Q] market. Quaification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for saes contact information. /04 8 www.irf.com
Note: For the most current drawings pease refer to the IR website at: http://www.irf.com/package/