BTA12-6C4G, BTA12-8C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to 8 On-State Current Rating of 12 Amperes RMS at 85 C Uniform Gate Trigger Currents in Three Quadrants High Immunity to d/dt 1 / s minimum at 125 C Minimizes Snubber Networks for Protection Industry Standard TO-22AB Package High Commutating di/dt 6. A/ms minimum at 125 C Internally Isolated (25 RMS ) Indicates UL Registered File #E69369 These are PbFree Devices MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Note 1) (T J = 4 to 125 C, Sine Wave, 5 to 6 Hz, Gate Open) BTA126C4G BTA128C4G On-State RMS Current (Full Cycle Sine Wave, 6 Hz, T C = 85 C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 6 Hz, T C = 25 C) DRM, RRM 6 8 I T(RMS) 12 A I TSM 12 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 4 A 2 sec Peak Gate Current (T J = 125 C, t = 2 s) I GM 2. A Peak Gate Power (Pulse Width 1. s, T C = 8 C) P GM 2 W Average Gate Power (T J = 125 C) P G(A) 1. W Operating Junction Temperature Range T J 4 to +125 C Storage Temperature Range T stg 4 to +15 C RMS Isolation oltage (t = 3 ms, R.H. 3%, T A = 25 C) iso 25 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 2 3 TRIACS 12 AMPERES RMS 6 thru 8 OLTS MT2 4 TO22AB CASE 221A STYLE 12 x = 6 or 8 A = Assembly Location Y = Year WW = Work Week G = PbFree Package MARKING DIAGRAM BTA12xCG AYWW ORDERING INFORMATION Device Package Shipping BTA126C4G PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 No Connection BTA128C4G TO22AB (PbFree) TO22AB (PbFree) G 5 Units / Rail 5 Units / Rail *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 212 April, 212 Rev. 1 1 Publication Order Number: BTA126C4/D
BTA126C4G, BTA128C4G THERMAL CHARACTERISTICS Thermal Resistance, Characteristic Symbol alue Unit JunctiontoCase (AC) JunctiontoAmbient R JC 2.5 R JA 6 Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 1 seconds T L 26 C C/W ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current ( D = Rated DRM, RRM ; Gate Open) T J = 25 C T J = +125 C ON CHARACTERISTICS Peak On-State oltage I TM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2% Gate Trigger Current (Continuous dc) (Main Terminal oltage = 12 dc, R L = 3 ) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Latching Current ( D = 12, I G = 6 ma, I G4 = 12 ma) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Gate Trigger oltage (Continuous dc) (Main Terminal oltage = 12 dc, R L = 3 ) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Gate NonTrigger oltage (Continuous dc) (Main Terminal oltage = 12, R L = 3, T J = +125 C) All Four Quadrants Holding Current ( D = 12 dc, Gate Open, Initiating Current = 2 ma) I DRM, I RRM 5. 2. A ma TM 1.55 I GT I L GT GD 25 25 25 5 4 8 4 4.2 ma ma I H 25 ma DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Current (T C = +125 C) di/dt (c) 6. A/ms Critical Rate of Rise of Off-State oltage ( D = Rated DRM, Exponential oltage Rise, Gate Open, T C = +125 C) dv/dt 1 / s 2
BTA126C4G, BTA128C4G oltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol DRM I DRM RRM I RRM Parameter Peak Repetitive Forward Off State oltage Peak Forward Blocking Current Peak Repetitive Reverse Off State oltage Peak Reverse Blocking Current I RRM at RRM on state I H TM Quadrant 1 MainTerminal 2 + TM I H Maximum On State oltage Holding Current I H off state + oltage I DRM at DRM Quadrant 3 MainTerminal 2 TM Quadrant Definitions for a Triac MT2 POSITIE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II () I GT (+) I GT Quadrant I I GT + I GT () MT2 () MT2 Quadrant III () I GT (+) I GT Quadrant I MT2 NEGATIE (Negative Half Cycle) All polarities are referenced to. With inphase signals (using standard AC lines) quadrants I and III are used. 3
BTA126C4G, BTA128C4G T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 125 115 15 95 85 = 3 6 9 18 = CONDUCTION ANGLE dc 75 2. 4. 6. 8. 1 12 I T(RMS), RMS ON STATE CURRENT (AMP) 14 P D(A), AERAGE POWER DISSIPATION (WATT) 28 24 2 16 12 8. 4. = CONDUCTION ANGLE 2. 4. 6. 8. 1 I T(RMS), RMS ON STATE CURRENT (AMP) = 18 9 6 3 12 dc 14 Figure 1. Current Derating Figure 2. Power Dissipation 1 5, INSTANTANEOUS ON STATE CURRENT (AMPS) IT 2 1 5. 2. 1..5.2 T J = 25 C T J = 125 C.1.4.8 1.2 1.6 2. 2.4 2.8 3.2 3.6 4. 4.4 GT, TRIGGER OLTAGE (NORMALIZED) 2. 1.6 1.2.8.4-6 -4-2 MAIN TERMINAL OLTAGE = 12 dc ALL QUADRANTS 2 4 6 8 T, INSTANTANEOUS ON STATE OLTAGE (OLTS) T C, CASE TEMPERATURE ( C) Figure 3. Maximum OnState oltage Characteristics Figure 4. Typical Gate Trigger oltage 4
BTA126C4G, BTA128C4G I GT, TRIGGER CURRENT (NORMALIZED) 2. 1.6 1.2.8.4-6 -4-2 2 MAIN TERMINAL OLTAGE = 12 dc ALL QUADRANTS 4 6 8 I H, HOLDING CURRENT (NORMALIZED) 2.8 2.4 2. 1.6 1.2.8.4-6 -4-2 MAIN TERMINAL OLTAGE = 12 dc ALL QUADRANTS 2 4 6 8 T C, CASE TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) Figure 5. Typical Gate Trigger Current Figure 6. Typical Holding Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1..5.2.1.5.2.1.1.2.5 1. 2. 5. 2 5 t, TIME (ms) 1 Z JC(t) = r(t) R JC 2 5 1. k 2. k 5. k 1 k Figure 7. Thermal Response 5
BTA126C4G, BTA128C4G PACKAGE DIMENSIONS TO22 CASE 221A7 ISSUE AA H Q Z L G B 4 1 2 3 N D A K F T U C T SEATING PLANE S R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62 14.48 15.75 B.38.45 9.66 1.28 C.16.19 4.7 4.82 D.25.35.64.88 F.142.147 3.61 3.73 G.95.15 2.42 2.66 H.11.155 2.8 3.93 J.14.22.36.55 K.5.562 12.7 14.27 L.45.6 1.15 1.52 N.19.21 4.83 5.33 Q.1.12 2.54 3.4 R.8.11 2.4 2.79 S.45.55 1.15 9 T.235.255 5.97 6.47 U..5. 1.27.45 --- 1.15 --- Z ---.8 --- 2.4 STYLE 12: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. 4. NOT CONNECTED ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 813581715 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTA126C4/D