FGH5N6S2D 6V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode General Description The FGH5N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT (co-pack) formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 Features 1kHz Operation at 39V, 4A 2kHZ Operation at 39V, A 6V Switching SOA Capability July 22 Typical Fall Time........... 9ns at TJ = 1 o C Low Gate Charge......... 7nC at V GE = 15V Low Plateau Voltage.............6.5V Typical UIS Rated......................... 48mJ Low Conduction Loss FGH5N6S2D Package JEDEC STYLE TO-247 Symbol E C G C G Device Maximum Ratings T C = C unless otherwise noted Symbol Parameter Ratings Units BV CES Collector to Emitter Breakdown Voltage 6 V I C Collector Current Continuous, T C = C 75 A I C11 Collector Current Continuous, T C = 11 C 6 A I CM Collector Current Pulsed (Note 1) 24 A V GES Gate to Emitter Voltage Continuous ±2 V V GEM Gate to Emitter Voltage Pulsed ±3 V SSOA Switching Safe Operating Area at T J = 15 C, Figure 2 15A at 6V E AS Pulsed Avalanche Energy, I CE = 3A, L = 1mH, V DD = 5V 48 mj P D Power Dissipation Total T C = C 463 W Power Dissipation Derating T C > C 3.7 W/ C T J Operating Junction Temperature Range -55 to 15 C T STG Storage Junction Temperature Range -55 to 15 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. E 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity 5N6S2D FGH5N6S2D TO-247 N/A 3 Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BV CES Collector to Emitter Breakdown Voltage I C = µa, V GE = 6 - - V I CES Collector to Emitter Leakage Current V CE = 6V T J = C - - µa T J = 1 C - - 2.8 ma I GES Gate to Emitter Leakage Current V GE = ± 2V - - ± na FGH5N6S2D On State Characteristics V CE(SAT) Collector to Emitter Saturation Voltage I C = 3A, T J = C - 1.9 2.7 V V GE = 15V T J = 1 C - 1.7 2.2 V V EC Diode Forward Voltage I EC = 3A - 2.2 2.6 V Dynamic Characteristics Q G(ON) Gate Charge I C = 3A, V GE = 15V - 7 85 nc V CE = 3V V GE = 2V - 9 11 nc V GE(TH) Gate to Emitter Threshold Voltage I C = µa, V CE = V GE 3.5 4.3 5. V V GEP Gate to Emitter Plateau Voltage I C = 3A, V CE = 3V - 6.5 8. V Switching Characteristics SSOA Switching SOA T J = 15 C, V GE = 15V, R G = 3Ω 15 - - A L = 1µH, V CE = 6V t d(on)i Current Turn-On Delay Time IGBT and Diode at T J = C, - 13 - ns t ri Current Rise Time I CE = 3A, - 15 - ns t V CE = 39V, d(off)i Current Turn-Off Delay Time - 55 - ns V GE = 15V, t fi Current Fall Time - 5 - ns R G = 3Ω E ON1 Turn-On Energy (Note 2) L = 2µH - 26 - µj E ON2 Turn-On Energy (Note 2) Test Circuit - Figure 26-33 - µj E OFF Turn-Off Energy (Note 3) - 35 µj t d(on)i Current Turn-On Delay Time IGBT and Diode at T J = 1 C - 13 - ns t ri Current Rise Time I CE = 3A, - 15 - ns V CE = 39V, t d(off)i Current Turn-Off Delay Time - 92 15 ns V GE = 15V, t fi Current Fall Time - 88 1 ns R G = 3Ω E ON1 Turn-On Energy (Note 2) L = 2µH - 26 - µj E ON2 Turn-On Energy (Note 2) Test Circuit - Figure 26-49 6 µj E OFF Turn-Off Energy (Note 3) - 575 85 µj t rr Diode Reverse Recovery Time I EC = 3A, di EC /dt = 2A/µs - 5 55 ns I EC = 1A, di EC /dt = 2A/µs - 3 42 ns Thermal Characteristics R θjc Thermal Resistance Junction-Case IGBT - -.27 C/W Diode - - 1.1 C/W NOTE: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in figure 26. 3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Typical Performance Curves T J = C unless otherwise noted I CE, DC COLLECTOR CURRENT (A) 14 12 1 8 PACKAGE LIMITED 6 4 2 5 75 1 1 15 2 T J = 15 o C, R G = 3Ω, V GE = 15V, L = 1µH 15 1 5 1 2 3 4 5 6 7 FGH5N6S2D T C, CASE TEMPERATURE ( o C) Figure 1. DC Collector Current vs Case Temperature V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 2. Minimum Switching Safe Operating Area 7 14 9 f MAX, OPERATING FREQUENCY (khz) T C = 75 o C 3 V GE = 15V 1 f MAX1 =.5 / (t d(off)i + t d(on)i ) f MAX2 = (P D - P C ) / (E ON2 + E OFF ) P C = CONDUCTION DISSIPATION (DUTY FACTOR = 5%) V GE = 1V R ØJC =.27 o C/W, SEE NOTES T J = 1 o C, R G = 3Ω, L = 2µH, V CE = 39V 1 1 1 3 6 t SC, SHORT CIRCUIT WITHSTAND TIME (µs) 12 1 8 6 4 2 V CE = 39V, R G = 3Ω, T J = 1 o C 8 7 6 I SC 5 4 t SC 3 2 9 1 11 12 13 14 15 16 I SC, PEAK SHORT CIRCUIT CURRENT (A) V GE, GATE TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Figure 4. Short Circuit Withstand Time 6 5 4 3 2 1 DUTY CYCLE <.5%, V GE = 15V PULSE DURATION = µs T J = 15 o C T J = o C T J = 1 o C 6 5 4 3 2 1 DUTY CYCLE <.5%, V GE =1V PULSE DURATION = µs T J = 15 o C T J = o C T J = 1 o C.5.75 1. 1. 1.5 1.75 2. 2..5.75 1. 1. 1.5 1.75 2. 2. V CE, COLLECTOR TO EMITTER VOLTAGE (V) V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Typical Performance Curves T J = C unless otherwise noted E ON2, TURN-ON ENERGY LOSS (µj) R G = 3Ω, L = 2µH, V CE = 39V 2 2 T J = o C, T J = 1 o C, V GE = 1V 175 15 1 1 75 5 T J = o C, T J = 1 o C, V GE = 15V 1 2 3 4 5 6 E OFF, TURN-OFF ENERGY LOSS (µj) 14 R G = 3Ω, L = 2µH, V CE = 39V 12 1 T J = 1 o C, V GE = 1V, V GE = 15V 8 6 4 2 T J = o C, V GE = 1V, V GE = 15V 1 2 3 4 5 6 FGH5N6S2D Figure 7. Turn-On Energy Loss vs Collector to Figure 8. Turn-Off Energy Loss vs Collector to R G = 3Ω, L = 2µH, V CE = 39V 7 R G = 3Ω, L = 2µH, V CE = 39V t d(on)i, TURN-ON DELAY TIME (ns) 2 15 1 5 T J = o C, T J = 1 o C, V GE = 1V T J = o C, T J = 1 o C, V GE = 15V t ri, RISE TIME (ns) 6 5 4 3 2 1 T J = o C, T J = 1 o C, V GE = 1V T J = o C, T J = 1 o C, V GE =15V 1 2 3 4 5 6 1 2 3 4 5 6 Figure 9. Turn-On Delay Time vs Collector to Figure 1. Turn-On Rise Time vs Collector to 1 R G = 3Ω, L = 2µH, V CE = 39V 1 R G = 3Ω, L = 2µH, V CE = 39V t d(off)i, TURN-OFF DELAY TIME (ns) 9 8 7 6 5 V GE = 1V, V GE = 15V, T J = 1 o C t fi, FALL TIME (ns) 1 75 5 T J = 1 o C, V GE = 1V, V GE = 15V T J = o C, V GE = 1V, V GE = 15V 4 V GE = 1V, V GE = 15V, T J = o C 1 2 3 4 5 6 1 2 3 4 5 6 Figure 11. Turn-Off Delay Time vs Collector to Figure 12. Fall Time vs Collector to Emitter Current 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Typical Performance Curves T J = C unless otherwise noted 2 2 175 15 1 1 75 5 4 DUTY CYCLE <.5%, V CE = 1V PULSE DURATION = µs TJ = o C TJ = 1 o C TJ = -55 o C 5 6 7 8 9 1 V GE, GATE TO EMITTER VOLTAGE (V) Figure 13. Transfer Characteristic V GE, GATE TO EMITTER VOLTAGE (V) 16 14 12 1 8 6 4 2 I G(REF) = 1mA, R L = 1Ω V CE = 6V V CE = 2V V CE = 4V 1 2 3 4 Q G, GATE CHARGE (nc) Figure 14. Gate Charge 5 6 7 8 FGH5N6S2D E TOTAL, TOTAL SWITCHING ENERGY LOSS (mj) 3. 2.5 2. 1.5 1..5 R G = 3Ω, L = 2µH, V CE = 39V, V GE = 15V E TOTAL = E ON2 + E OFF I CE = 6A I CE = 3A I CE = 15A 5 75 1 1 15 T C, CASE TEMPERATURE ( o C) E TOTAL, TOTAL SWITCHING ENERGY LOSS (mj) 1 1 1 T J = 1 o C, L = 2µH, V CE = 39V, V GE = 15V E TOTAL = E ON2 + E OFF I CE = 6A I CE = 3A I CE = 15A.1 1. 1 1 1 R G, GATE RESISTANCE (Ω) Figure 15. Total Switching Loss vs Case Temperature Figure 16. Total Switching Loss vs Gate Resistance C, CAPACITANCE (nf) 4. FREQUENCY = 1MHz 3.5 3. 1 C IES 2.5 2. 1.5 1. C OES.5 C RES. 1 2 3 4 5 6 7 8 9 1 V CE, COLLECTOR TO EMITTER VOLTAGE (V) V CE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 2.4 2.3 2.2 2.1 2. 1.9 1.8 1.7 6 DUTY CYCLE <.5% PULSE DURATION = µs I CE = 45A I CE = 3A I CE = 15A 7 8 9 1 11 12 13 14 15 16 V GE, GATE TO EMITTER VOLTAGE (V) Figure 17. Capacitance vs Collector to Emitter Voltage Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Typical Performance Curves T J = C unless otherwise noted I EC, FORWARD CURRENT (A) 75 6 45 3 15 DUTY CYCLE <.5%, PULSE DURATION = µs 1 o C o C t rr, REVERSE RECOVERY TIMES (ns) 2 175 15 1 1 75 5 di EC /dt = 2A/µs, V CE = 39V o C t a, t b 1 o C t rr 1 o C t b o C t rr FGH5N6S2D 1 o C t a.5 1. 1.5 2. 2.5 3. 3.5 2 6 1 14 18 22 26 3 V EC, FORWARD VOLTAGE (V) I EC, FORWARD CURRENT (A) Figure 19. Diode Forward Current vs Forward Voltage Drop Figure 2. Recovery Times vs Forward Current t a, t b, REVERSE RECOVERY TIMES (ns) 15 1 1 75 5 1 o C t a o C t a o C t b 1 o C t b I EC = 3A, V CE = 39V Q rr, REVERSE RECOVERY CHARGE (nc) 12 1 8 6 4 2 V CE = 39V 1 o C, I EC = 3A 1 o C, I EC = 15A o C, I EC = 3A o C, I EC = 15A 2 4 6 8 1 12 2 4 6 8 1 12 di EC /dt, RATE OF CHANGE OF CURRENT (A/µs) di EC /dt, RATE OF CHANGE OF CURRENT (A/µs) Figure 21. Recovery Times vs Rate of Change of Current Figure 22. Stored Charge vs Rate of Change of Current S, REVERSE RECOVERY SOFTNESS FACTOR 3. 2.5 2. 1.5 1..5 I EC = 15A I EC = 3A V CE = 39V, T J = 1 C I RRM, MAX REVERSE RECOVERY CURRENT (A) 3 2 15 1 5 V CE = 39V, T J = 1 C I EC = 3A I EC = 15A 2 4 6 8 1 12 2 4 6 8 1 12 di EC /dt, CURRENT RATE OF CHANGE (A/µs) di EC /dt, CURRENT RATE OF CHANGE (A/µs) Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Typical Performance Curves T J = C unless otherwise noted Z θjc, NORMALIZED THERMAL RESPONSE 1 1-1.5.2.1.5.2.1 SINGLE PULSE 1-2 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, RECTANGULAR PULSE DURATION (s) Figure. IGBT Normalized Transient Thermal Impedance, Junction to Case P D DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z θjc X R θjc ) + T C t 1 t 2 FGH5N6S2D Test Circuit and Waveforms FGH5N6S2D DIODE TA49392 9% V GE 1% E ON2 L = 2µH E OFF V CE R G = 3Ω 9% FGH5N6S2D + - V DD = 39V I CE t d(off)i 1% t fi t ri t d(on)i Figure 26. Inductive Switching Test Circuit Figure 27. Switching Test Waveforms 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of V GEM. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or f MAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by f MAX1 =.5/(t d(off)i + t d(on)i ). Deadtime (the denominator) has been arbitrarily held to 1% of the on-state time for a 5% duty factor. Other definitions are possible. t d(off)i and t d(on)i are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. t d(off)i is important when controlling output ripple under a lightly loaded condition. f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON2 ). The allowable dissipation (P D ) is defined by P D =(T JM -T C )/R θjc. The sum of device switching and conduction losses must not exceed P D. A 5% duty factor was used (Figure 3) and the conduction losses (P C ) are approximated by P C =(V CE xi CE )/2. E ON2 and E OFF are defined in the switching waveforms shown in Figure 27. E ON2 is the integral of the instantaneous power loss (I CE x V CE ) during turnon and E OFF is the integral of the instantaneous power loss (I CE xv CE ) during turn-off. All tail losses are included in the calculation for E OFF ; i.e., the collector current equals zero (I CE = ) FGH5N6S2D ECCOSORBD is a Trademark of Emerson and Cumming, Inc. 22 Fairchild Semiconductor Corporation FGH5N6S2D RevA2
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