High-Power, Passively Q-switched Microlaser - Power Amplifier System

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High-Power, Passively Q-switched Microlaser - Power Amplifier System Yelena Isyanova Q-Peak, Inc.,135 South Road, Bedford, MA 01730 isyanova@qpeak.com Jeff G. Manni JGM Associates, 6 New England Executive Park, Suite 400, Burlington, MA 01803 David Welford Endeavour Laser Technologies, P.O. Box 174, Hathorne, MA 01937 1

Technical objective Develop a Subnanosecond-Pulse MOPA System Including diode-laser-pumped, passively Q-switched, 1064-nm Nd-doped microlaser, multipass amplifier and SHG to generate pulses with Pulse energy: 150 μj Wavelength: 532 nm Pulse rate: 2 khz Pulsewidth 200 ps 2

Phase I Nd:YVO4 Microlaser HR AR Output 100 um fiber from diode laser Nd:YVO4 Cr:YAG Output coupler 4 mm The laser crystal was a 1-mm thick piece of 3% Nd-doped YVO 4 with the pumped face highly transmitting at the pump wavelength and highly reflecting at 1064 nm while the opposite face was anti-reflection (AR) coated at 1064 nm. No attempt was made to double-pass the pump light through the laser crystal. The resonator was formed between the pumped face of the crystal and an external mirror placed to < 1 mm of the AR-coated face of the crystal. Using this arrangement we were able to change output coupling transmission and insert the saturable absorber material to Q-switch. Pump induced thermal lensing and gain-guiding in the Nd:YVO 4 crystal stabilizes the resonator and the 100 μm diameter pump beam only provides excitation for the TEM 00 -mode. Hence, we obtained near-tem 00 -mode output beam quality. 3

Pulse energy and rate as a function of pump power 4 100 3 80 Pulse Energy (uj) 2 60 40 Pulse Rate (khz) Roc=80% Tsa=80% 1 20 0 0 1 2 3 4 Pump Power (W) 0 4

Modeling of Microchip Lasers Zayhowski and Kelley analysis τ = E = 8.1n N σc N 0 2 π rm lrhυ 2 o N 0 is the initial population inversion (1.1 10 18 cm -3) n is the refractive index, σ is the gain medium emission cross-section (15.6 10-19 cm 2 ), c is the speed of light, r m is the laser beam radius (75 μm), l r is the round trip path length (3 mm), h is Planck s constant, ν is the optical frequency Experimental and theoretical results for 2-W pumped laser: Pulsewidth: 2.5 nsec Pulse energy: 3.4 μj 315 ps 6.5 μj Average power: 300 mw 5

Nd:YVO4 Microlaser Development HR AR Pump Output Nd:YVO 4 YAG Epoxy Heatsink Output coupler and absorber Face-cooled heatsinking with an epoxy bonded or optically-contacted, 3 mm 3 mm 1 mm, 1% Nd-doped YVO 4 laser crystal 6

Nd:YVO4 Microlaser with edge-mounted laser crystal heatsinking HR Indium Foil AR Pump Nd:YVO 4 Aluminum heatsink Air Gap 1 3 mm Output coupler Output Pump beam propagation data in the Nd:YVO 4 crystal for 100 μm diameter, 0.22 NA fiber pumping with various fiber-to-crystal air gaps. 1000.0 800.0 Air gap YVO 4 Air gap 670 um 410 um Diameter (um) 600.0 400.0 100 μm fiber 150 um 0 um 200.0 0.0 0 0.5 1 1.5 2 Distance from YVO 4 front face (mm) 7

Nd:YVO4 microlaser output power data as a function of output coupling 1000 Output power (mw) 900 800 700 600 500 400 300 200 100 0 98%R 94%R 90%R 85%R 80%R 70%R 0 0.5 1 1.5 2 2.5 3 Pump power (W) Pump source: OPC-D003-808-HB/100 fiber-coupled diode laser 8

Nd:YVO4 microlaser output data as a function of pump beam diameter 1000 900 800 700 Output power (mw) 600 500 400 300 285 μm pump dia. 25.3% slope 0.188 W threshold 168 μm pump dia. 48.7% slope 0.121 W threshold 200 100 400 μm pump dia. 20.4% slope 0.218 W threshold 0 0 0.5 1 1.5 2 2.5 3 Pump power (W) 9

Nd:YAG/Cr:YAG Microlaser Development Cavity length 8 mm Pump light Output beam Nd:YAG Nd:YVO 4 85%R Output coupler 90%T Cr:YAG Clamping pressure Nd:YAG 10

Clamping pressure Nd:YAG 100-μm-core fiber 11

Polarization instability of Q-switched pulses All Pulses Horizontally Polarized Pulses Vertically Polarized Pulses 12

Experimental data and model predictions for Nd:YAG/Cr:YAG passively Q-switched microlasers Device Experimental data [21,22] Model predictions Pulse energy (μj) Pulsewidth (ps) Pulse energy (μj) Pulsewidth (ps) LPMCL-1 4 218 5.1 227 LPMCL-2 4.7 275 4.5 232 LPMCL-3 7 440 5.4 387 LPMCL-4 9 440 7 347 LPMCL-5 14 460 9.1 330 MPMCL-1 30 700 29 622 MPMCL-2 40 1200 40 1244 MPMCL-3 65 2200 59 2486 HPMCL-1 130 390 77 340 HPMCL-2 225 700 127 628 HPMCL-3 200 310 84 253 HPCML-4 250 380 84 358 13

Pulse duration measurement beamblock To photodetector To M 2 meter uncoated wedge pump lens microlaser polarizer uncoated wedge power meter Pulse durations were measured with a Sydor InGaAs photodetector (model IGA80s) and a Tektronix sampling oscilloscope. Light was delivered to the detector with a 60-micron-core multimode fiber. This system was characterized with <2-ps duration pulses from a passively modelocked cw Cr:YAG laser at 1450 nm, and demonstrated a 110-ps (full-width at half-maximum peak height) impulse response time 14

Synoptics s microchip laser output pulse energy as a function of pump power 1.5x1.5x1.5 mm 3 1.25-mm Nd:YAG 0.25-mm Cr:YAG material 4 μj pulse energy <650 psec pulsewidth TEM 00 -mode output beam 10 8 Pulse energy (μj) 6 4 2 0 0 1 1 2 2 Pump power (W) 15

Microchip designs Microchip design Q-Peak-1 Q-Peak-2 Synoptics Nd:YAG doping 2.8% 2.8% 1.9% t (mm) 0.5 0.5 1.25 Cr:YAG t (mm) Cr:YAG α (cm -1 ) 0.25 0.5 0.25 5.7 5.7 6.0 R oc (%) 80 80 80 T p calcls (ps) 304 204 200 T p measur (ps) 700 440 440 16

Microchip design 2.8% Nd:YAG t (mm) Cr:YAG t (mm) Cr:YAG α (cm -1 ) Q-Peak- 1 Q-Peak- 2/3 Q-Peak- 1/3 LPMCL- 1 LPMCL- 2 0.5 0.5 0.5 0.5 0.5 1 0.75 0.5 0.25 0.25 0.25 0.25 5.7 5.7 5.7 6 6 6 LPMCL- 3 R oc (%) 40 80 80 80 85 85 T p measur (ps) 450 450 850 218 275 440 T p calcls (ps) 150 204 304 218 224 374 17

Microlaser output pulse profile 0.7 W pump power at 809.0 nm 440 ps pulse duration 18

Microlaser characteristics Microlaser parameters Microlaser 1, 4:3 telescope Microlaser 2, 2:1 telescope Microlaser 3, 4:3 telescope Average power, mw 4.4 3.1 6.4 Pulse energy, μj 2.2 1.55 3.2 Pulse width, FWHM, psec 700 400-440 400-440 Delay, μsec 90 40 70 Pump pulse width, μsec 120 60 120 Jitter, ns ± 100 ± 100 ± 100 Drift, 5 min, ns ± 300 ± 200 ± 200 19

Optical layout of a multi-pass Nd:YVO4 slab amplifier Side view Nd:YVO 4 slab Transverse pumping @808 nm with 2 x 20-W diode bars 2 x 3 x 15 mm 3 Nd:YVO4 slab Diode bar Diode bar Fiber lens Heat sink Fiber lens Diode bar Diode bar Fiber lens Top view 20

Double-pass gain curves for cw-pumped multi-pass slab amplifiers 2000 1600 Nd:YVO 4 Output energy 1200 Nd:YLF 800 Nd:YAG 400 0 0 20 40 60 80 100 120 140 160 180 200 Input energy (μj) 21

22

Micro-VAM optical layout Nd:YVO 4 Amplifier HR Mirror Cylindrical lens SHG THG/ 4HG Nd:YAG/Cr:YAG Microlaser Fiber λ/2 plate Isolator λ/2 plate Telescope Diode laser 23

Summary A Cr:YAG passively Q-switched Nd:YAG microchip laser that generated 3.2- μj, 400-ps pulses at a 2 khz rate. The microlaser, quasi-cw end-pumped by a 1-W fiber-coupled laser diode, combines high peak power output, good beam quality, and compactness and reliability. An efficient cw transversely-diode-pumped double-pass Nd:YVO4 amplifier. The amplifier multipass gain module is based on the design developed by Q-Peak for the MPS commercial series of lasers. It combines high-power output, and freedom from optical distortion of the laser material caused by the pumping process. The amplifier produced 370-ps output pulses of 335-μJ energy at a 2 khz rate. A 60-% conversion efficiency second harmonic generator (SHG) based on a NCPM Type I LBO crystal mounted in a temperature-stabilized oven. The average output power of the 532-nm beam was 400 mw (200 μj per pulse) that is ~1.3 times the proposed value. The M 2 values characterizing the beam quality were 1.17 and 1.14 in the horizontal and vertical plane, respectively. Third and fourth harmonic nonlinear devices based on critically-phase-matched LBO and BBO crystals, respectively, operating at room temperature. The output powers at 355 nm and 266 nm were 240 mw and 66 mw, respectively. 24

Micro-VAM 25

US (MIT) Patent Passively Q-switched Picosecond Microlaser The licenses currently issued by MIT are: 1. an exclusive license for the field of use of optical ranging, positioning, and alignment issued to Cyra Technologies Inc., 2. an exclusive license for the field of use of air turbulence compensation as defined in US Patent 5,404,222 issued to Spartra Inc., 3. an non-exclusive license for the field of use of acoustic spectroscopy of solid materials and solid thin films for the purpose of determining their mechanical properties issued to Active Impulse Systems Inc., 4. an exclusive license to manufacture and sell passively Q-switched microlasers using an epitaxial growth technique issued to Synoptics Inc., and 5. an exclusive license to manufacture and sell passively Q-switched microlasers for any and all fields of use not related to optical ranging, positioning, and alignment issued to Uniphase Inc. 26