4V+2.5V Drive Nch+Pch MOSFET

4V+2.5V Drive Nch+Pch MOSFET US6M US6M Sucture Silicon N-channel / P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). 0.2Max. Application Power switching, DC / DC converter. Abbreviated symbol : M0 Packaging specifications Package Type Code Basic ordering unit (pieces) US6M Taping TR 3000 Equivalent circuit (6) (5) (4) 2 2 () (2) (3) ESD PROTECTION DIODE 2 BODY DIODE () Tr (Nch) Source (2) Tr (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr (Nch) Drain Absolute maximum ratings () Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature Pw 0µs, Duty cycle % 2 Mounted on a ceramic board. Thermal resistance Continuous Continuous Symbol Limits Tr : Nchannel Tr2 : Pchannel S 30 20 S 20 2 ID ±.4 ± IDP ±5.6 ±4 IS 0.6 0.4 ISP 5.6 4 2 PD 0.7 Tch 50 Tstg 55 to +50 Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 25 C / W /TOTAL 79 C / W / ELEMENT 2 Mounted on a ceramic board. Unit V V A A A A W / TOTAL W / ELEMENT C C Rev.C /7

US6M N-ch Elecical characteristics () Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward ansfer admittance Input capacitance Output capacitance Reverse ansfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V(BR) DSS IDSS (th) RDS (on) Yfs Ciss Coss Crss td (on) td (off) Qg Qgs Qgd Min. Typ. Max. Unit Conditions 0 µa =20V, =0V 30 V ID=mA, =0V µa =30V, =0V.0 2.5 V =0V, ID=mA 70 240 ID=.4A, =0V 250 350 mω ID=.4A, =4.5V 270 380 ID=.4A, =4V.0 S ID=.4A, =0V 70 pf =0V 5 pf =0V 2 pf f=mhz 6 ns ID=0.7A, VDD 5V 6 ns =0V 3 ns RL=2Ω 8 ns RG=0Ω.4 2.0 nc VDD 5V RL=Ω 0.6 nc =5V RG=0Ω 0.3 nc ID=.4A Body diode characteristics (Source-Drain) () Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward voltage VSD.2 V IS=0.6A, =0V Rev.C 2/7

US6M P-ch Elecical characteristics () Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 0 µa =2V, =0V Drain-source breakdown voltage V(BR) DSS 20 V ID= ma, =0V Zero gate voltage drain current IDSS µa = 20V, =0V Gate threshold voltage (th) 0.7 2.0 V = 0V, ID= ma 280 390 ID= A, = 4.5V Static drain-source on-state RDS (on) 30 430 mω ID= A, = 4V resistance 570 800 ID= 0.5A, = 2.5V Forward ansfer admittance Yfs 0.7 S ID= 0.5A, = 0V Input capacitance Ciss 50 pf = 0V Output capacitance Coss 20 pf =0V Reverse ansfer capacitance Crss 20 pf f=mhz Turn-on delay time td (on) 9 ns ID= 0.5A, VDD 5V Rise time 8 ns = 4.5V Turn-off delay time td (off) 25 ns RL=30Ω Fall time 0 ns RG=0Ω Total gate charge Qg 2. nc VDD 5V RL=5Ω Gate-source charge Qgs 0.5 nc = 4.5V RG=0Ω Gate-drain charge Qgd 0.5 nc ID= A Body diode characteristics (Source-Drain) () Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward voltage VSD.2 V IS= 0.4A, =0V Rev.C 3/7

US6M N-ch Elecical characteristic curves CAPACITANCE : C (pf) 000 00 0 Crss Coss Ciss f=mhz =0V 0.0 0. 0 00 SWITCHING TIME : t (ns) 000 00 0 td (on) td (off) VDD=5V =4.5V RG=0Ω 0.0 0. 0 GATE-SOURCE VOLTAGE : (V) 6 5 4 3 2 VDD=5V ID=.5A RG=0Ω 0 0 0.5.5 2 DRAIN-SOURCE VOLTAGE : (A) TOTAL GATE CHARGE : Qg (nc) Fig. Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 0 0. 0.0 Ta=25 C =0V 0.00 0.0 0.5.0.5 2.0 2.5 GATE-SOURCE VOLTAGE : (V) Fig.4 Typical Transfer Characteristics ON-STATE RESISTANCE : RDS (on) (Ω).0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0. ID=.5A ID=0.75A 0.0 0 2 3 4 5 6 7 8 9 0 GATE-SOURCE VOLTAGE : (V) Fig.5 Static Drain-Source vs. Gate-Source Voltage SOURCE CURRENT : Is (A) 0 0. Ta=25 C =0V 0.0 0.0 0.5.0.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage ON-STATE RESISTANCE : RDS (on) (Ω) 0 Ta=25 C 0. 0.0 0. 0 =4.5V Fig.7 Static Drain-Source vs. Drain Current (Ι) ON-STATE RESISTANCE : RDS (on) (Ω) 0 Ta=25 C 0. 0.0 0. 0 =4.0V Fig.8 Static Drain-Source vs. Drain Current (ΙΙ) ON-STATE RESISTANCE : RDS (on) (Ω) 0 Ta=25 C =2.5V 0. 0.0 0. 0 Fig.9 Static Drain-Source vs. Drain Current (ΙΙΙ) Rev.C 4/7

US6M P-ch Elecical characteristic curves CAPACITANCE : C (pf) 000 00 f=mhz =0V Ciss Crss Coss 0 0.0 0. 0 00 SWITCHING TIME : t (ns) 0000 000 00 0 td (off) td (on) VDD= 5V = 4.5V RG=0Ω 0.0 0. 0 GATE-SOURCE VOLTAGE : (V) 8 7 6 5 4 3 2 VDD= 5V ID= A RG=0Ω 0 0 0.5.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : (V) TOTAL GATE CHARGE : Qg (nc) Fig. Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 0 0. 0.0 = 0V 0.00 0.6 0.8.0.2.4.6.8 2.0 2.2 2.4 2.6 2.8 3.0 GATE-SOURCE VOLTAGE : (V) Fig.4 Typical Transfer Characteristics ON-STATE RESISTANCE : RDS (on) (mω) 000 750 500 250 ID= A ID= 0.5A 0 0 2 4 6 8 0 2 GATE-SOURCE VOLTAGE : (V) Fig.5 Static Drain-Source vs. Gate-Source Voltage REVERSE DRAIN CURRENT : IS (A) 0 0. Ta=25 C =0V 0.0 0.0 0.2 0.4 0.6 0.8.0.2.4.6 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage ON-STATE RESISTANCE : RDS (on) (mω) 0000 000 Ta=25 C = 4.5V 00 0.0 0. 0 Fig.7 Static Drain-Source vs. Drain Current (Ι) ON-STATE RESISTANCE : RDS (on) (mω) 0000 000 Ta=25 C = 4V 00 0.0 0. 0 Fig.8 Static Drain-Source vs. Drain Current (ΙΙ) ON-STATE RESISTANCE : RDS (on) (mω) 0000 000 Ta=25 C = 2.5V 00 0.0 0. 0 Fig.9 Static Drain-Source vs. Drain Current (ΙΙΙ) Rev.C 5/7

US6M N-ch Measurement circuit Pulse Width ID RL 90% 50% 50% 0% RG D.U.T. VDD 0% 0% 90% 90% td(on) td(off) ton toff Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms VG ID Qg IG(Const.) RG D.U.T. RL Qgs Qgd VDD Charge Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Rev.C 6/7

US6M P-ch Measurement circuit Pulse Width ID RL 0% 50% 90% 50% RG D.U.T. VDD td(on) 0% 0% 90% 90% td(off) ton toff Fig.3- Switching Time Measurement Circuit Fig.3-2 Switching Waveforms VG ID Qg IG(Const.) RG D.U.T. RL Qgs Qgd VDD Charge Fig.4- Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Rev.C 7/7

Appendix Notes No technical content pages of this document may be reproduced in any form or ansmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illusations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or conolled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary eleconic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, elecical appliances and eleconic toys). Should you intend to use these products with equipment or devices which require an exemely high level of reliability and the malfunction of with would directly endanger human life (such as medical insuments, ansportation equipment, aerospace machinery, nuclear-reactor conollers, fuel conollers and other safety devices), please be sure to consult with our sales representative in advance. About Export Conol Order in Japan Products described herein are the objects of conolled goods in Annex (Item 6) of Export Trade Conol Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all conols for Non-Proliferation of Weapons of Mass Desuction. Appendix-Rev.

Datasheet US6M - Web Page Disibution Inventory Part Number US6M Package TUMT6 Unit Quantity 3000 Minimum Package Quantity 3000 Packing Type Taping Constitution Materials List inquiry RoHS Yes