HiPerFAST TM IGBT with Diode Combi Pack IXGH N6AU IXGH N6AUS S = 6 V = 8 A (sat) =.7 V = 7 ns Symbo Test Conditions Maximum Ratings S = C to C 6 V V CGR = C to C; R GE = MΩ 6 V S Continuous ± V M Transient ± V = C 8 A 9 = 9 C A M = C, ms 96 A SSOA = V, T VJ, R G = Ω M = 8 A (RBSOA) Camped inductive oad, L = µh @.8 S P C = C W -... + C M C T stg -... + C Maximum Lead and Tab temperature for sodering C.6 mm (.6 in.) from case for s M d Mounting torque, TO-7 AD./ Nm/b.in. Weight TO-7 SMD g TO-7 AD 6 g Symbo Test Conditions Characteristic Vaues ( = C, uness otherwise specified) min. typ. max. BS = 7 µa, = V 6 V (th) = µa, =.. V ES =.8 S = C µa = V 8 ma I GES = V, = ± V ± na (sat) = 9, = V.7 V TO-7 SMD (N6AUS) TO-7 AD (N6AU) G C E G = Gate, E = Emitter, G C = Coector, TAB = Coector C (TAB) Features Internationa standard packages JEDEC TO-7 SMD surface mountabe and JEDEC TO-7 AD IGBT and anti-parae FRED in one package nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction osses MOS Gate turn-on - drive simpicity Fast Recovery Epitaxia Diode (FRED) - soft recovery with ow I RM Appications AC motor speed contro DC servo and robot drives DC choppers Uninterruptibe power suppies (UPS) Switch-mode and resonant-mode power suppies Advantages Space savings (two devices in one package) Easy to mount with screw, TO-7 (isoated mounting screw hoe) Reduces assemby time and cost E C (TAB) 997 IXYS Corporation. A rights reserved. 977H (/97)
IXGHN6AU Symbo Test Conditions Characteristic Vaues ( = C, uness otherwise specified) min. typ. max. g fs = 9 ; = V, 9 S Puse test, t µs, duty cyce % C ies pf C oes = V, = V, f = MHz 7 pf C res pf IXGHN6AUS TO-7 AD Outine P Q g 9 nc Q ge = 9, = V, =. S nc Q gc nc t d(on) Inductive oad, = C ns t ri = 9, = V, L = µh, ns E on =.8 S, R G = R off = Ω.6 mj t d(off) Remarks: Switching times may increase ns for V 7 ns E CE (Camp) >.8 S, higher or off increased R. mj G t d(on) Inductive oad, ns t ri ns I E C = 9, = V, L = µh on.8 mj t =.8 S, R G = R off = Ω d(off) ns t Remarks: Switching times may increase fi ns E for (Camp) >.8 S, higher or off. mj increased R G R thjc.8 K/W R thck. K/W e Dim. Miimeter Inches Min. Max. Min. Max. A.7..8.9 A...87. A..6.9.98 b.... b.6..6.8 b.87... C..8.6. D.8.6.89.8 E.7 6.6.6.6 e..7.. L 9.8..78.8 L..77 P..6.. Q.89 6... R..9.7.6 S 6. BSC BSC TO-7 SMD Outine Reverse Diode (FRED) Characteristic Vaues ( = C, uness otherwise specified) Symbo Test Conditions min. typ. max. V F = 9, = V,.6 V Puse test, t µs, duty cyce d % I RM = 9, = V, - /dt = A/µs A t rr = 6 V ns = A; -di/dt = A/µs; = V = C ns K/W R thjc. Gate. Coector. Emitter. Coector Min. Recommended Footprint (Dimensions in inches and (mm)) IXYS reserves the right to change imits, test conditions, and dimensions. Dim. Miimeter Inches Min. Max. Min. Max. A.8..9. A.9..9. A.9.6.7.8 b.... b.9..7.8 C.6.8.. D.8..89.8 E.7 6..6.6 e. BSC. BSC L.9..9. L.7.9.6. L...8.9 L.... L.9..7.8 ØP..6.. Q.9 6... R..8.7.9 S 6. BSC. BSC IXYS MOSFETS and IGBTs are covered by one or more of the foowing U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7,8,7,9,8,,796,6,7,7,8,8,
IXGHN6AU IXGHN6AUS Fig. Saturation Characteristics Fig. Output Characterstics - Amperes = C = V V V 9V 7V - Amperes 7 = C = V V V 9V 7V 6 7 6 8 6 8 - Vots - Vots - Vots Fig. Coector-Emitter Votage Fig. Temperature Dependence vs. Gate-Emitter Votage of Output Saturation Votage = C 9 8 7 6 I C = A = A = A 6 7 8 9 (sat) - Normaized.6 = V = A... = A.8 = A.6. - - 7 - Vots - Degrees C - Amperes Fig. Input Admittance = V = C = - C BV / (th) - Normaized....9.8.7 Fig. 6 Temperature Dependence of Breakdown and Threshod Votage BS = µa (th) = µa 6 7 8 9.6 - - 7 - Vots GN6p.JNB - Degrees C 997 IXYS Corporation. A rights reserved.
IXGHN6AU IXGHN6AUS Fig.7 Turn-Off Energy per Puse and Fa Time on Coector Current R G = Ω Fig.8 Dependence of Turn-Off Energy Per Puse and Fa Time on R G = A - nanoseconds - miijoues - nanoseconds - miijoues - Amperes 6 8 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig. Turn-Off Safe Operating Area - Vots 9 6 = A = V - Amperes R G = Ω dv/dt < V/ns. 7 Q g - nanocouombs GN6P.JNB. 6 - Vots Fig. Transient Therma Impedance D=. D=. Z thjc (K/W). D=. D=. D=. D = Duty Cyce D=. Singe Puse..... Puse Width - seconds IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the foowing U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7,8,7,9,8,,796,6,7,7,8,8,
IXGHN6AU IXGHN6AUS Fig. Maximum Forward Votage Drop Fig. Peak Forward Votage V FR and Forward Recovery Time t FR Current - Amperes 8 6 = C = C = C V FR - Vots = 7A V FR 8 6 t fr - nanoseconds t fr..... Votage Drop - Vots Fig. Junction Temperature Dependence 6 Fig. Reverse Recovery Chargee off I RM and Q r Normaized I RM /Q r....8.6.. I RM Q r Q r - nanocouombs = C = V typ. = 6A = A = A = A max.. 8 6 - Degrees C Fig.6 Peak Reverse Recovery Current Fig.7 Reverse Recovery Time I RM - Amperes = C = V typ. = 6A = A = A = A max. t rr - nanoseconds.8.6.. = A max. typ. = 6A = A = A = C = V 6. 6 997 IXYS Corporation. A rights reserved.
IXGHN6AU IXGHN6AUS Fig.7 Diode Transient Therma resistance junction to case. R thjc - K/W..... Puse Width - Seconds IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the foowing U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7,8,7,9,8,,796,6,7,7,8,8,