MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The MAAM-1119 is an easy-to-use, wideband amplifier that operates from 1 MHz - 4 GHz. The device features 13 db gain and +18 dbm of output power. Matching is Ω with typical return loss better than 1 db. This amplifier requires dual DC supplies: V (19 ma) and a low current V (<1 ma). The MAAM-1119 integrates an ultra-broadband bias choke, DC blocking and bypass capacitors. Other features include a gate bias adjust pin to change current setting for power or temperature, a gain trim control pin that allows 1 db of gain control ( to -1V), and a temperature compensated detector pin that provides a DC voltage in relation to output power. The MAAM-1119 is ideally suited for any application that requires Ω gain from 1 MHz to 4 GHz. It is useful in applications where the incoming signal varies over a broad bandwidth such as laboratory, instrumentation, and defense applications. This device is housed in a leadless X X 1.3 mm package that can be handled and placed with standard pick and place assembly equipment. The package base is a two layer laminate with overmold fully compatible with PCB environment and wash conditions. The module includes a GaAs MMIC that is fully passivated for performance and reliability. Ordering Information 1,2 Functional Schematic RF IN 1 Pin Configuration Pin No. Pin Name Function 1 RF IN RF Input 2 V E - V Supply 3 N/C No Connection 4 V G Gate Adjust (optional) RF OUT RF Output 6 V D + V Supply 7 B C V C V DET B C V D 9 8 V E V D Bypass (optional) No Connection 8 V DET Power Detector 9 V C Gain Control 1 Paddle 3 Ground 7 N/C RF OUT 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. 6 2 3 4 V G Part Number MAAM-1119 MAAM-1119-TR1 MAAM-1119-1SMB Package bulk quantity 1 piece reel Sample board * Restrictions on Hazardous Substances, European Union Directive 211/6/EU. 1 1. Reference Application Note M13 for reel size information. 2. All sample boards include 3 loose parts.
MAAM-1119 1 MHz - 4 GHz Rev. V2 Electrical Specifications: T A = +2 C, V D = + V, V E = - V, V C = Open, Z IN = Z OUT = Ω Parameter Test Conditions Units Min. Typ. Max. Gain.1 GHz 2 GHz 12 GHz 2 GHz 32 GHz 4 GHz db 11. 1. 1. 8. 12. 13. 12. 11. 11. 8. Isolation.1-4 GHz db 22 Input Return Loss.1-4 GHz db 13 Output Return Loss.1-4 GHz db 9 Noise Figure.1-4 GHz db 3. P1dB Output IP3.1 GHz 1 GHz 4 GHz.1 GHz 1 GHz 4 GHz dbm dbm Bias Current V D = + V, V E = - V ma 17 +18 +17 +13 +26 +24 +16 Absolute Maximum Ratings 4,,6 Parameter Input Power Drain Supply Voltage Junction Temperature 7 Operating Temperature Storage Temperature Absolute Max. +17 dbm +8 Volts +1 C -4 C to +8 C -6 C to +1 C 4. Exceeding any one or combination of these limits may cause permanent damage to this device.. MACOM does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with T J 1 C will ensure MTTF > 1 x 1 6 hours. 7. Junction Temperature (T J ) = T C + Ө JC * ((V * I) - (P OUT - P IN )) Typical thermal resistance (Ө JC ) = 21 C/W a) For T C = 2 C, T J = 43 C @ V, 19 ma, P OUT = 2 dbm, P IN = 7 dbm b) For T C = 8 C, T J = 13 C @ V, 19 ma, P OUT = 2 dbm, P IN = 7 dbm Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. 2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Application Schematic Application Information for DC & pins 9 1 8 7 6 For proper MAAM-1119 operation a DC voltage must be applied at the V E (- V) and V D (+ V) pins in that order. The optional V G pin maybe used to override the automatic V E bias network to hard set the gate. Adjusting V G from -.2 V to -.6 V will change the quiescent current. If V G is used, V E should be left unconnected. Paddle 2 4 The V C pin is typically left unconnected unless gain control or output power limiting is desired. Please refer to the Variable Gain/Limiting section for detailed usage. Recommended PCB Layout The V D pin should be bypassed with at least.1 µf for stability. For operation below 1 MHz a ferrite bead (Murata BLM18BB471) must be inserted between the V D pin and bypass capacitor. The V G and V C pins must also be bypassed with a.1 µf capacitor if operating below 1 MHz. The V DET pin is typically left unconnected unless a voltage reference is desired that is correlated to the output power. Please refer to the Internal Detector section for detailed usage. The B C pin is typically left unconnected unless gain bandwidth and shape change is desired. Please refer to an application note on this pin. The input and output pins are internally DC blocked. No more than +/- 12 V should ever be present on these RF only pins. Parts List Component Value Package The backside paddle of the MAAM-1119 should be connected to ground with as many vias as possible to maximize high frequency performance, thermal dissipation, and stability. C1.22 µf 21 L1 47 Ω 63 3
MAAM-1119 1 MHz - 4 GHz Rev. V2 Typical Performance Curves over Temperature Gain Noise Figure 2 1 1 1 +2 C -4 C +8 C 1 +2 C -4 C +8 C 1 2 3 4 Input Return Loss 1 2 3 4 Output Return Loss -1 +2 C -4 C +8 C -1-2 -2 +2 C -4 C +8 C -3 1 2 3 4 Output P1dB 3-3 1 2 3 4 Output IP3 3 +2 C -4 C +8 C 2 2 1 1 +2 C -4 C +8 C 1 2 3 4 1 2 3 4 4
MAAM-1119 1 MHz - 4 GHz Rev. V2 Typical Performance Curves vs. Voltage and Current Gain Noise Figure 2 1 1 1 3.3 V, 1 ma 3.3 V, 19 ma V, 1 ma V, 19 ma 1 3.3 V, 1 ma 3.3 V, 19 ma V, 1 ma V, 19 ma 1 2 3 4 Input Return Loss 1 2 3 4 Output Return Loss -1 3.3 V, 1 ma 3.3 V, 19 ma V, 1 ma V, 19 ma -1-2 -2 3.3 V, 1 ma 3.3 V, 19 ma V, 1 ma V, 19 ma -3 1 2 3 4 Output P1dB 3-3 1 2 3 4 Output IP3 3 3.3 V, 1 ma 3.3 V, 19 ma V, 1 ma V, 19 ma 2 2 1 1 3.3 V, 1 ma 3.3 V, 19 ma V, 1 ma V, 19 ma 1 2 3 4 1 2 3 4
MAAM-1119 1 MHz - 4 GHz Rev. V2 Typical Performance Curves Isolation Gain vs. Frequency, VC = -.9 to 1.1 V 2-1 -2 +2 C -4 C +8 C 1-3 -4 - -1-6 1 2 3 4 Stability Factor 1-2 1 2 3 4 Output Saturated Power 2 8 2 6 1 4 1 2 1 2 3 4 Gain @ GHz vs. Control Voltage 2 1 2 3 4 Low Frequency Response 2 1 1-1 S21 S11 S22-1 -2-2 -1.2 -.6.6 1.2 Voltage (V) -3...1.1.2 6
MAAM-1119 1 MHz - 4 GHz Rev. V2 Typical Performance Curves V DET vs. Output Power 4 V DET vs. Output Power @ 2 GHz 4 3 2 GHz 1 GHz 2 GHz 3 +2 C -4 C +8 C 3 3 2 2 2-1 - 1 1 2 2 Output Power (dbm) Current vs. Gate Voltage 3 2-1 - 1 1 2 2 Output Power (dbm) Current vs. Control Voltage 3 2 2 2 2 3.3 V V 1 1 1 1-1.6-1.4-1.2-1. -.8 -.6 -.4 -.2 Voltage (V ) G -1. -... 1. Voltage (V ) C 7
MAAM-1119 1 MHz - 4 GHz Rev. V2 Application Details Bandwidth, Power, Noise and Linearity V D and I D affect both the bandwidth (response flatness), power available, noise figure, and linearity of the amplifier. Higher currents and lower V D increase high frequency gain but reduce the P1dB and the OIP3 numbers. If the device is driven to P1dB and on into P SAT the current, I D, will naturally reduce. The device will return to the quiescent I D value once the input power is reduced. Finally, higher I D and V D values increase the device noise figure. Temperature also affects the bandwidth, gain and noise figure of the device. Lower temperatures increase gain and bandwidth and reduce the noise figure. Temperature has little effect on power and linearity. Broadband Amplifier Applications The MAAM-1119 also has a low enough noise figure to be used in instrumentation front ends and buffer applications. It also has very flat response with low group delay distortion so it can be used in pulse applications. For higher gains multiple amplifiers may be cascaded. It also makes a very good low cost optical driver capable of delivering to 8 V p-p into Ω. Variable Gain/Limiting Applications The gain of the MAAM-1119 can be easily controlled with the V C pin. The gain reduction is almost linear with V C between.1 V to -.8 V. Below -.7 V internal ESD protection diodes will draw increasing current ( ma at -1. V). The V C pin should not be driven below -1 V or above 1.2 V. The nominal open circuit voltage at the V C pin is.8 V. Reducing V C below.8 V will also reduce I D. Gain, P1dB, and P SAT will all be reduced as V C is lowered. Limiting applications and zero crossing adjustment can be done by adjusting the V G and V C pins together. Internal Detector The V DET pin is connected to an internal diode detector. This pin should be connected to a high impedance (> kω) or left unconnected. The detector is internally connected so that it responds predominately to the power generated by the amplifier. The detector has a low pass characteristic which rolls off gradually above 2 GHz. The detector is temperature compensated. Finally, even with zero output power the detector has a DC output voltage proportional to V D (nominally 2.8 V for V D = V). Lead-Free mm 9-lead LGA 8 All Dimensions are in mm TOP TOP SIDE SIDE BOTTOM BOTTOM TOP SIDE BOTTOM Reference Application Note S283 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 3 requirements. Plating is gold over nickel.