Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 3.5 GHz Output Power (P3dB): 07 W at 3.5 GHz Linear Gain: > 4 db at 3.5 GHz Typical PAE: > 50% at 3.5 GHz Operating Voltage: 28 V Low thermal resistance package General Description The TriQuint TGF2929-FS is a 07 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin Configuration Pin No. Label VD / RF OUT 2 VG / RF IN Flange Source Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description TGF2929-FS EAR99 Packaged part Flangeless TGF2929-FS-EVB EAR99 3.-3.5 GHz Evaluation Board Datasheet: Rev A - 2--4 - of 2 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Breakdown Voltage (BVDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) RF Input Power, CW, T = 25 C (PIN) RF Characterization Load Pull Performance at GHz () Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 2.2 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 00 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 75.7 % G3dB Gain at 3 db Compression (Power Tuned) 8.2 db. Pulse: 00µs, 20% RF Characterization Load Pull Performance at 2 GHz () Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 6.7 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 32 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 64.4 % G3dB Gain at 3 db Compression (Power Tuned) 3.7 db. Pulse: 00µs, 20% Value 45 V min. -0 to 0 V 2 A -28.8 to 33.6 ma 44 W 39.8 dbm Channel Temperature (TCH) 275 C Mounting Temperature (30 Seconds) 320 C Storage Temperature -40 to 50 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage (VD) Drain Quiescent Current (IDQ) Peak Drain Current, Pulse ( ID) Gate Voltage (VG) Channel Temperature (TCH) Power Dissipation, CW (PD) Power Dissipation, Pulse (PD) Value 28 V (Typ.) 260 ma (Typ.) 7.23 A (Typ.) -2.9 V (Typ.) 250 C (Max.) 82 W (Max) 40 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Pulse signal: 00uS Pulse Width, 20% Duty Cycle Datasheet: Rev A - 2--4-2 of 2 - Disclaimer: Subject to change without notice
RF Characterization Load Pull Performance at 3.0 GHz () Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 5.6 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 20 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 65.5 % G3dB Gain at 3 db Compression (Power Tuned) 2.6 db. Pulse: 00µs, 20% RF Characterization Load Pull Performance at 3.5 GHz () Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 5.8 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 07 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 58.4 % G3dB Gain at 3 db Compression (Power Tuned) 2.8 db. Pulse: 00µs, 20% Datasheet: Rev A - 2--4-3 of 2 - Disclaimer: Subject to change without notice
RF Characterization Performance at 3.3GHz Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain 5.0 db P3dB Output Power at 3 db Gain Compression 06 W PAE3dB Power-Added Efficiency at 3 db Gain Compression 5.3 % G3dB Gain at 3 db Compression 2.0 db. Pulse: 00µs PW, 20% 2. Performance at 3.3GHz in the 3. to 3.5GHz Evaluation Board (, 2) RF Characterization Mismatched Ruggedness at 3.50 GHz Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 ma Symbol Parameter (, 2) Typical VSWR Impedance Mismatch Ruggedness 0:. Input power established at P3dB at matched load at the output of 3. 3.5 GHz Evaluation Board 2. Pulse: 00uS PW, 20% Datasheet: Rev A - 2--4-4 of 2 - Disclaimer: Subject to change without notice
Thermal and Reliability Information - Pulsed Parameter Test Conditions Value Units Thermal Resistance () (θjc) 0.75 C/W Channel Temperature (TCH) 00uS, 5%, Pdiss = 00W 60 C Median Lifetime (TM).92E09 Hours Thermal Resistance () (θjc) 0.79 C/W Channel Temperature (TCH) 00uS, 0%, Pdiss = 00W 64.3 C Median Lifetime (TM).24E09 Hours Thermal Resistance () (θjc) 0.88 C/W Channel Temperature (TCH) 300uS, 20%, Pdiss = 00W 73 C Median Lifetime (TM) 5.3E08 Hours Thermal Resistance () (θjc).5 C/W Channel Temperature (TCH) 300uS, 50%, Pdiss = 00W 200 C Median Lifetime (TM) 4.20E07 Hours. Thermal resistance measured to bottom of package. Thermal and Reliability Information - CW Parameter Test Conditions Value Units Thermal Resistance (θjc) 0.87 ºC/W 85 C Case Channel Temperature (TCH) 0 C 28.8 W Pdiss Median Lifetime (TM) 6.38E Hrs Thermal Resistance (θjc).49 ºC/W 85 C Case Channel Temperature (TCH) 7 C 57.6 W Pdiss Median Lifetime (TM) 6.29E8 Hrs Thermal Resistance (θjc).62 ºC/W 85 C Case Channel Temperature (TCH) 225 C 86.4 W Pdiss Median Lifetime (TM) 5.49E6 Hrs Thermal Resistance (θjc).74 ºC/W 85 C Case Channel Temperature (TCH) 285 C 5.2 W Pdiss Median Lifetime (TM) 7.80E4 Hrs. Thermal resistance measured to bottom of package. Datasheet: Rev A - 2--4-5 of 2 - Disclaimer: Subject to change without notice
Median Lifetime Median Lifetime, T M (Hours) Median Lifetime vs. Channel Temperature.00E+9.00E+8.00E+7.00E+6.00E+5.00E+4.00E+3.00E+2.00E+.00E+0.00E+09.00E+08.00E+07.00E+06.00E+05 25 50 75 00 25 50 75 200 225 250 275 Channel Temperature, T CH ( C) Datasheet: Rev A - 2--4-6 of 2 - Disclaimer: Subject to change without notice
Maximum Channel Temperature - Pulsed 260.0 Maximum Channel Temperature Package base fixed at 85 o C, Pdiss = 00 W 240.0 Maximum Channel Temperature ( o C) 220.0 200.0 80.0 60.0 5% Duty Cycle 0% Duty Cycle 20% Duty Cycle 50% Duty Cycle 40.0 20.0.00E-06.00E-05.00E-04.00E-03.00E-02.00E-0.00E+00 Pulse Width (sec) Datasheet: Rev A - 2--4-7 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 8.. Test Conditions: VDS = 28 V, IDQ = 260 ma 2. Test Signal: Pulse Width = 00 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled. GHz, Load-pull Zs(fo) =.45-0.27iΩ Zs(2fo) = 6.54+24.95iΩ Zs(3fo) = 3.67-6.9iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ 0.4 0.5 0.6 Max Power is 50dBm at Z = 2.24+0.492iΩ Γ = -0.6764+0.0592i Max Gain is 20.4dB at Z =.648+2.66iΩ Γ = -0.686+0.336i Max PAE is 75.7% at Z = 2.39+3.03iΩ Γ = -0.588+0.3395i 0.3 20.4 9.9 9.4 75.5 73.5 7.5 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9.2.4.6.8 2 49.9 49.7 49.5 Zo =.7Ω Power Gain PAE Datasheet: Rev A - 2--4-8 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 8.. Test Conditions: VDS = 28 V, IDQ = 260 ma 2. Test Signal: Pulse Width = 00 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled. 2GHz, Load-pull Zs(fo) =.33-4.22iΩ Zs(2fo) =.06+.79iΩ Zs(3fo) = 2.3+.72iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ 0. 4.4 4.9 0.2 0.3 0.4 0.5 0.6 0.7 Max Power is 5.2dBm at Z = 2.555-.967iΩ Γ = -0.608-0.2223i Max Gain is 5.dB at Z = 3.42+0.937iΩ Γ = -0.546+0.0955i Max PAE is 64.4% at Z =.679-0.78iΩ Γ = -0.743-0.08i 0.8 0.9.2.4 3.9 63.9 6.9 59.9 5 50.8 50.6-0.3 Zo =.7Ω -0.4 Power Gain PAE Datasheet: Rev A - 2--4-9 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 8.. Test Conditions: VDS = 28 V, IDQ = 260 ma 2. Test Signal: Pulse Width = 00 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled. 3GHz, Load-pull Zs(fo) = 5.6-8.3iΩ Zs(2fo) = 3.73-4.83iΩ Zs(3fo) = 37.97-7.46iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ 0. 0.2 0.3 0.4 0.5 0.6 Max Power is 50.8dBm at Z = 2.794-4.043iΩ Γ = -0.4979-0.478i Max Gain is 4.4dB at Z =.705-.63iΩ Γ = -0.7202-0.2092i Max PAE is 65.5% at Z =.752-2.538iΩ Γ = -0.6797-0.37i 0.7 0.8 0.9.2 4.2 64.4 3.7 62.4 60.4 3.2-0.3 50.7 50.5 50.3 Zo =.7Ω -0.4 Power Gain PAE Datasheet: Rev A - 2--4-0 of 2 - Disclaimer: Subject to change without notice
Load Pull Smith Charts (, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 8.. Test Conditions: VDS = 28 V, IDQ = 260 ma 2. Test Signal: Pulse Width = 00 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled. 3.5GHz, Load-pull Zs(fo) = 3-0.58iΩ Zs(2fo) = 7.62+3.24iΩ Zs(3fo) = 4.24+2.78iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ 0. 0.2 0.3 0.4 0.5 0.6 Max Power is 50.3dBm at Z = 2.992-5.6iΩ Γ = -0.478-0.4979i Max Gain is 4dB at Z =.839-3.66iΩ Γ = -0.606-0.4355i Max PAE is 58.4% at Z =.839-3.66iΩ Γ = -0.606-0.4355i 0.7 0.8 0.9 53.5 55.5 3.9 57.5 3.4 2.9-0.3 50.3 50. 49.9-0.4 Zo =.7Ω -0.5 Power Gain PAE Datasheet: Rev A - 2--4 - of 2 - Disclaimer: Subject to change without notice
(, 2) Typical Load-pull Performance Power Tuned. Vds = 28V, Idq = 260mA, Pulse Width = 00uS, Duty Cycle = 20%, 25 C 2. Performance measured at device s reference planes. See page 8. Gain [db] 25.0 24.0 23.0 22.0 2.0 20.0 9.0 8.0 7.0 6.0 TGF2929-FS Gain and PAE vs. Pout GHz; Vds= 28V; Idq = 260mA; Pulse: 00us, 20%; Power Tuned 65 Zs0 =.45-j0.27Ω Zl0 = 2.24+j0.49Ω 5.0 5 44 45 46 47 48 49 50 5 Pout [dbm] 60 55 50 45 40 35 30 25 20 PAE [%] Gain [db] 20.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0.0 TGF2929-FS Gain and PAE vs. Pout 2GHz; Vds= 28V; Idq = 260mA; Pulse: 00us, 20%; Power Tuned Zs0 =.33-j4.22Ω Zl0 = 2.56-j.97Ω 0.0 5 39 40 4 42 43 44 45 46 47 48 49 50 5 52 Pout [dbm] 65 60 55 50 45 40 35 30 25 20 PAE [%] Gain [db] 20.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0.0 TGF2929-FS Gain and PAE vs. Pout 3GHz; Vds= 28V; Idq = 260mA; Pulse: 00us, 20%; Power Tuned Zs0 = 5.6-j8.30Ω Zl0 = 2.79-j4.04Ω 0.0 0 40 4 42 43 44 45 46 47 48 49 50 5 Pout [dbm] 60 55 50 45 40 35 30 25 20 5 PAE [%] Gain [db] 20.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0.0 Zs0 = 3.0-j0.58Ω Zl0 = 2.99-j5.6Ω TGF2929-FS Gain and PAE vs. Pout 3.5GHz; Vds= 28V; Idq = 260mA; Pulse: 00us, 20%; Power Tuned 0.0 0 38 39 40 4 42 43 44 45 46 47 48 49 50 5 Pout [dbm] 60 55 50 45 40 35 30 25 20 5 PAE [%] Datasheet: Rev A - 2--4-2 of 2 - Disclaimer: Subject to change without notice
(, 2) Typical Load-pull Performance Efficiency Tuned. Vds = 28V, Idq = 260mA, Pulse Width = 00uS, Duty Cycle = 20%, 25 C 2. Performance measured at device s reference planes. See page 8. Gain [db] 20.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0.0 TGF2929-FS Gain and PAE vs. Pout 2GHz; Vds= 28V; Idq = 260mA; Pulse: 00us, 20%; Efficiency Tuned Zs0 =.33-j4.22Ω Zl0 =.68-j0.78Ω 0.0 20 40 4 42 43 44 45 46 47 48 49 50 5 Pout [dbm] 70 65 60 55 50 45 40 35 30 25 PAE [%] Gain [db] 3GHz; Vds= 28V; Idq = 260mA; Pulse: 00us, 20%; Efficiency Tuned 20.0 75 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0.0 TGF2929-FS Gain and PAE vs. Pout Zs0 = 5.6-j8.30Ω Zl0 =.75-j2.54Ω 0.0 25 4 42 43 44 45 46 47 48 49 50 Pout [dbm] 70 65 60 55 50 45 40 35 30 PAE [%] Gain [db] 20.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0.0 TGF2929-FS Gain and PAE vs. Pout 3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 00us, 20%; Efficiency Tuned Zs0 = 3.0-j0.58Ω Zl0 =.84-j3.66Ω 0.0 20 39 40 4 42 43 44 45 46 47 48 49 Pout [dbm] 70 65 60 55 50 45 40 35 30 25 PAE [%] Datasheet: Rev A - 2--4-3 of 2 - Disclaimer: Subject to change without notice
Performance Over Temperature (, 2) Performance measured in TriQuint s 3. GHz to 3.5 GHz Evaluation Board at 3 db compression. P3dB [W] 50.0 40.0 30.0 20.0 0.0 00.0 90.0 80.0 70.0 60.0 P3dB vs. Frequency vs. Temperature -40 C -20 C 0 C 25 C 45 C 65 C 85 C 50.0 3. 3.2 3.3 3.4 3.5 Frequency [GHz] G3dB [db] 20 9 8 7 6 5 4 3 2 0 9 8 7 6 5 G3dB vs. Frequency vs. Temperature -40 C -20 C 0 C 25 C 45 C 65 C 85 C 3. 3.2 3.3 3.4 3.5 Frequency [GHz] PAE3dB [%] 00 90 80 70 60 50 40 30 20 0 PAE3dB vs. Frequency vs. Temperature -40 C -20 C 0 C 25 C 45 C 65 C 85 C 0 3. 3.2 3.3 3.4 3.5 Frequency [GHz]. Test Conditions: VDS = 28 V, IDQ = 260 ma 2. Test Signal: Pulse Width = 00 µs, Duty Cycle = 20% Datasheet: Rev A - 2--4-4 of 2 - Disclaimer: Subject to change without notice
Evaluation Board Performance at 25 C (, 2) Performance measured in TriQuint s 3. GHz to 3.5 GHz Evaluation Board at 3 db compression. P3dB [W] P3dB and G3dB vs. Frequency @ 25 C 50 20.0 40 8.5 30 7.0 20 5.5 0 P3dB 4.0 00 2.5 90 G3dB.0 80 9.5 70 8.0 60 6.5 50 5.0 3. 3.2 3.3 3.4 3.5 Frequency [GHz] G3dB [db] PAE [%] PAE vs. Frequency at 25 C 00 90 80 70 60 50 40 30 20 0 0 3. 3.2 3.3 3.4 3.5 Frequency [GHz]. Test Conditions: VDS = 28 V, IDQ = 260 ma 2. Test Signal: Pulse Width = 00 µs, Duty Cycle = 20 % Datasheet: Rev A - 2--4-5 of 2 - Disclaimer: Subject to change without notice
Application Circuit DC_V ID=Vg DC_V ID=Vd CAP ID=C7 CAP ID=C4 CAP ID=C6 RES ID=R2 CAP ID=C5 RES ID=R IND ID=L FET IND ID=L2 CAP ID=C8 PORT P= 2 Z=50 Ohm PORT P=2 Z=50 Ohm CAP ID=C CAP ID=C2 CAP ID=C3 3 Bias-up Procedure. VG set to -5 V. 2. VD set to 28 V. 3. Adjust VG more positive until quiescent ID is 260 ma. 4. Apply RF signal. Bias-down Procedure. Turn off RF signal. 2. Turn off VD and wait second to allow drain capacitor dissipation. 3. Turn off VG. Datasheet: Rev A - 2--4-6 of 2 - Disclaimer: Subject to change without notice
TGF2929-FS Evaluation Board Layout Top RF layer is 0.020 thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number R C, C2 C3 L R2 C4 L2 C5 C6 C7 C8 00 Ω 5.6 pf.0 pf 22 nh 0 Ω 0 uf 2 nh 2400 pf 000 pf 220 uf 5 pf 2 Vishay/Dale ATC ATC Coilcraft Vishay/Dale Murata Coilcraft Murata ATC United Chemi-Con ATC CRCW060300RJNEA 600S5R6BT 600SR0BT 0805CS-220X-LB CRCW06030R0JNEA C632X5R0J06M30AC A04T_L C08BL242X-5UN-X0T 800B02JT50XT EMVY500ADA22MJA0G 600S50JT250XT Datasheet: Rev A - 2--4 204 TriQuint - 7 of 2 - Disclaimer: Subject to change without notice www.triquint.com
Pin Layout Note: The TGF2929-FS will be marked with the TGF2929-FS designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number. Pin Description Pin Symbol Description VD / RF OUT Drain voltage / RF Output 2 VG / RF IN Gate voltage / RF 3 Flange Source connected to ground Datasheet: Rev A - 2--4-8 of 2 - Disclaimer: Subject to change without notice
Mechanical Information All dimensions are in inches. Note: Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/rohs-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes. Datasheet: Rev A - 2--4-9 of 2 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class B Value: 500 V and < 000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A4 MSL Rating The part is rated Moisture Sensitivity Level 3 at 260 C per JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C5H2Br402) Free PFOS Free SVHC Free Recommended Soldering Temperature Profile Datasheet: Rev A - 2--4-20 of 2 - Disclaimer: Subject to change without notice
Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +.972.994.8465 Email: info-sales@triquint.com Fax: +.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev A - 2--4-2 of 2 - Disclaimer: Subject to change without notice