series E GENERAL DESCRIPION QUICK REFERENCE DAA Glass passivated, SYMBOL PARAMEER MAX. MAX. MAX. UNI triacs in a plastic envelope, intended for use in general purpose 5E 6E 8E bidirectional switching and phase V DRM Repetitive peak offstate 5 6 8 V control applications, where high voltages sensitivity is required in all four I (RMS) RMS onstate current 6 6 6 A quadrants. I SM Nonrepetitive peak onstate 4 4 4 A current PINNING O22AB PIN CONFIGURAION SYMBOL PIN DESCRIPION main terminal 2 main terminal 2 tab 2 3 gate tab main terminal 2 23 G LIMIING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMEER CONDIIONS MIN. MAX. UNI 5 6 8 V DRM Repetitive peak offstate 5 6 8 V voltages I (RMS) RMS onstate current full sine wave; mb 99 C 6 A I SM Nonrepetitive peak full sine wave; j = 25 C prior to onstate current surge t = 2 ms t = 6.7 ms 4 5 A A I 2 t I 2 t for fusing t = ms 98 A 2 s di /dt Repetitive rate of rise of I M = 2 A; I G =.2 A; onstate current after di G /dt =.2 A/µs triggering 2+ G+ 5 A/µs 2+ G 2 G 5 5 A/µs A/µs 2 G+ A/µs I GM Peak gate current 2 A V GM Peak gate voltage 5 V P GM Peak gate power 5 W P G(AV) Average gate power over any 2 ms period.5 W stg Storage temperature 4 5 C j Operating junction 25 C temperature Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. he rate of rise of current should not exceed 5 A/µs. September 997 Rev.2
series E HERMAL RESISANCES SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI R th jmb hermal resistance full cycle.2 K/W junction to mounting base half cycle.7 K/W R th ja hermal resistance in free air 6 K/W junction to ambient SAIC CHARACERISICS j = 25 C unless otherwise stated SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI I G Gate trigger current V D = 2 V; I =. A 2+ G+ 2.5 2+ G 2 G 4. 5. 2 G+ 25 I L Latching current V D = 2 V; I G =. A 2+ G+ 3.2 3 2+ G 6 4 2 G 2 G+ 4. 5.5 3 4 I H Holding current V D = 2 V; I G =. A 4. 3 V Onstate voltage I = 2 A.2.6 V V G Gate trigger voltage V D = 2 V; I =. A.7.5 V V D = 4 V; I =. A; j = 25 C.25.4 V I D Offstate leakage current V D = V DRM() ; j = 25 C..5 DYNAMIC CHARACERISICS j = 25 C unless otherwise stated SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI dv D /dt Critical rate of rise of offstate voltage V DM = 67% V DRM() ; j = 25 C; exponential waveform; gate open circuit 5 V/µs t gt Gate controlled turnon I M = 2 A; V D = V DRM() ; I G =. A; 2 µs time di G /dt = 5 A/µs September 997 2 Rev.2
Philips Semiconductors series E Ptot / W 25 mb() / C 95 I(RMS) / A 2 2 5 = 8 2 9 6 3 7 3 5 99 C 5 9 5 25 5 5 2 I(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I (RMS), where α = conduction angle. 5 5 5 mb / C Fig.4. Maximum permissible rms current I (RMS), versus mounting base temperature mb. ISM / A I(RMS) / A 5 4 3 di /dt limit 2 G+ quadrant I ISM time 2 j initial = 25 C us us ms ms ms / s Fig.2. Maximum permissible nonrepetitive peak onstate current I SM, versus pulse width t p, for sinusoidal currents, t p 2ms... surge duration / s Fig.5. Maximum permissible repetitive rms onstate current I (RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; mb 99 C. ISM / A 5 I I SM time.6.4 VG(j) VG(25 C) B36 j initial = 25 C.2 5.8.6 Number of cycles at 5Hz Fig.3. Maximum permissible nonrepetitive peak onstate current I SM, versus number of cycles, for sinusoidal currents, f = 5 Hz..4 5 5 5 Fig.6. Normalised gate trigger voltage V G ( j )/ V G (25 C), versus junction temperature j. September 997 3 Rev.2
series E 3 2.5 2 IG(j) IG(25 C) E 2+ G+ 2+ G 2 G 2 G+ I / A 5 j = 25 C j = 25 C 4 3 Vo =.95 V Rs =.8 Ohms typ.5 2.5 5 5 5 Fig.7. Normalised gate trigger current I G ( j )/ I G (25 C), versus junction temperature j..5.5 2 2.5 3 V / V Fig.. ypical and imum onstate characteristic. 3 IL(j) IL(25 C) RIAC Zth jmb (K/W) 2.5 unidirectional 2 bidirectional.5.. P D t p.5 t 5 5 5 Fig.8. Normalised latching current I L ( j )/ I L (25 C), versus junction temperature j.. us.ms ms ms.s s s tp / s Fig.. ransient thermal impedance Z th jmb, versus pulse width t p. 3 IH(j) IH(25C) RIAC dvd/dt (V/us) 2.5 2.5.5 5 5 5 Fig.9. Normalised holding current I H ( j )/ I H (25 C), versus junction temperature j. 5 5 Fig.2. ypical, critical rate of rise of offstate voltage, dv D /dt versus junction temperature j. September 997 4 Rev.2
series E MECHANICAL DAA Dimensions in mm Net Mass: 2 g 4,5,3 3,7,3 2,8 5,9 min 5,8 3, not tinned,3 (2x) 2 3 2,54 2,54 3, 3,5 min,9 (3x),6 2,4 Notes. Refer to mounting instructions for O22 envelopes. 2. Epoxy meets UL94 V at /8". Fig.3. O22AB; pin 2 connected to mounting base. September 997 5 Rev.2
series E DEFINIIONS Data sheet status Objective specification his data sheet contains target or goal specifications for product development. Preliminary specification his data sheet contains preliminary data; supplementary data may be published later. his data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. hese are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. he information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPOR APPLICAIONS hese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 997 6 Rev.2