FJPF3009 NPN Silicon Transistor High oltage Switch Mode Application High oltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply December 2007 FJPF3009 NPN Silicon Transistor TO-220F.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T C = 25 C unless otherwise noted (notes_) Symbol Parameter alue Units CBO Collector-Base oltage 700 CEO Collector-Emitter oltage 400 EBO Emitter-Base oltage 9 Collector Current (DC) 2 A P Collector Current (Pulse) 24 A I B Base Current 6 A P C Collector Dissipation (T C = 25 C) 50 W T J Junction Temperature 50 C T STG Storage Temperature Range -65 ~ 50 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_: ) These ratings are based on a maximum junction temperature of 50 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. h FE Classification Classification H H2 h FE 8 ~ 7 5 ~ 28 FJPF3009 Rev. B
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units CEO (sus) Collector-Emitter Sustaining oltage = 0mA, I B = 0 400 I EBO Emitter Cut-off Current EB = 9, = 0 ma h FE * DC Current Gain CE = 5, = 5A (h FE ) CE = 5, = 8A CE (sat) * Collector-Emitter Saturation oltage = 5A, I B = A = 8A, I B =.6A = 2A, I B = 3A BE (sat) * Base-Emitter Saturation oltage = 5A, I B = A = 8A, I B =.6A C ob Output Capacitance CB = 0, f = 0.MHz 80 pf f T Current Gain Bandwidth Product CE = 0, = 0.5A 4 MHz t ON Turn On Time CC = 25, = 8A. µs t STG Storage Time I B = - I B2 =.6A, R L = 5,6Ω 3 µs t F Fall Time 0.7 µs 8 6 40 30.5 3.2.6 FJPF3009 NPN Silicon Transistor * Pulse Test: PW 300µs, Duty Cycle 2% Package Marking and Ordering Information Device Item (notes_2) Device Marking Package Packing Method Remarks FJPF3009TU J3009 TO-220F TUBE FJPF3009TTU J3009 TO-220F TUBE Potting Type FJPF3009H2TU J30092 TO-220F TUBE Notes_2 : ) The Affix -H2 means the hfe classification. 2) The Affix -T means the TO220F Potting type package option. 3) The Suffix -TU means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. FJPF3009 Rev. B 2
Typical Performance Characteristics h FE, DC CURRENT GAIN 00 0 0. 0 00 CE = 5 BE (sat), CE (sat)[], SATURATION OLTAGE 0 0. BE (sat) CE (sat) = 3 I B 0.0 0. 0 00 FJPF3009 NPN Silicon Transistor Figure. DC current Gain Figure 2. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage 000 0000 CC =25 =5I B C ob [pf], CAPACITANCE 00 0 t R, t D [ns], TURN ON TIME 000 00 t R t D, BE (off)=5 0. 0 00 000 CB [], COLLECTOR BASE OLTAGE 0 0. 0 00 Figure 3. Collector Output Capacitance Figure 4. Turn On Time t STG, t F [ns], TURN OFF TIME 0000 000 t STG CC =25 =5I B 00 0 0. DC 0µs 00µs ms t F 00 0. 0 00 0.0 0 00 000 CE [], COLLECTOR-EMITTER OLTAGE Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area FJPF3009 Rev. B 3
Typical Performance Characteristics (Continued) 00 0 0. cc=50, I B =A, I B2 = -A L = mh 0.0 0 00 000 0000 P C [W], POWER DISSIPATION 70 60 50 40 30 20 0 0 0 25 50 75 00 25 50 75 FJPF3009 NPN Silicon Transistor CE [], COLLECTOR-EMITTER OLTAGE T C [ o C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating FJPF3009 Rev. B 4
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