NLHV18T Channel Level Shifter

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18-Channel Level Shifter The NLHV18T3244 is an 18 channel level translator designed for high voltage level shifting applications such as displays. The 18 channels are divided into twelve and two three channel groups, with each group controlled by the inverting inputs SEL1, SEL2 and, SEL3; respectively. The EN input is used to select the ON or power saving shutdown modes. Each channel consists of a high voltage output buffer. The output buffers use N channel low side and P channel high side transistors. The output signal on pins OUT1 to OUT18 is pulled by the transistors to the positive high or negative low voltage on the V Hx and V Lx power supply pins, respectively, depending on the voltage of the inverting pins. Features 18 Non Inverting / Inverting Channels V H1, V H2 Supply Range: 5 V to 25 V V L1, V L2 Supply Range: 13 V to 0 V V Hx V Lx Difference Range: 5 V to 25 V V L1 and V L2 can be tied together or connected to independent supply voltages as long as V L1 V L2 V D Supply Range: 2 V to 5.5 V Outputs Specified with 1000 pf Capacitive Loads Disable Function Low Standby Current No Glitch on Power Up Available in: 5 mm x 10 mm, 0.5 mm pitch, QFN50 Package 1 50 QFN50 CASE 485BW A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package MARKING DIAGRAM NLHV 18T3244 AWLYYWWG ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Typical Applications OLED Drivers High Voltage Level Shifters Piezoelectric Motor Drivers Semiconductor Components Industries, LLC, 2013 May, 2013 Rev. 0 1 Publication Order Number: NLHV18T3244/D

Figure 1. Simplified Schematic Option I (V L1 V L2 ) 2

FUNCTION TABLE (X Input = Don t Care, Hi Z = High Impedance Tri State Output) Input Output EN SEL1 SEL2 SEL3 Block 1 (OUT1 OUT12) Block 2 (OUT13 OUT15) Block 3 (OUT16 OUT18) GND X X X Hi Z Hi Z Hi Z V D GND GND GND Normal Normal Normal V D GND GND V D Normal Normal Inverted V D GND V D GND Normal Inverted Normal V D GND V D V D Normal Inverted Inverted V D V D GND GND Inverted Normal Normal V D V D GND V D Inverted Normal Inverted V D V D V D GND Inverted Inverted Normal V D V D V D V D Inverted Inverted Inverted 3

Figure 2. Pin Assignments (Top View) PIN ASSIGNMENTS Pin Name Pin Number Pin Name Pin Number Pin Name Pin Number OUT1 1 OUT18 18 IN8 35 OUT2 2 GND 19 IN7 36 OUT3 3 VH2 20 IN6 37 OUT4 4 VL2 21 IN5 38 OUT5 5 VH1 22 IN4 39 OUT6 6 VL1 23 IN3 40 OUT7 7 VD 24 IN2 41 OUT8 8 IN18 25 IN1 42 OUT9 9 IN17 26 GND 43 OUT10 10 IN16 27 SEL3 44 OUT11 11 IN15 28 SEL2 45 OUT12 12 IN14 29 SEL1 46 OUT13 13 IN13 30 EN 47 OUT14 14 IN12 31 VD 48 OUT15 15 IN11 32 VL1 49 OUT16 16 IN10 33 VH1 50 OUT17 17 IN9 34 No Connect Center Tap 4

ABSOLUTE MAXIMUM RATINGS Symbol Parameter Condition Value Unit V Hx High side DC Supply Voltage 0.5 to +30 V V Lx Low side DC Supply Voltage 15 to +0.5 V V Hx Differential V H V L Voltage 0 to +30 V V Lx V D Logic Supply Voltage 0.5 to +5.5 V V I Input (IN1 IN18), Invert (SEL1 SEL3) and Enable (EN) Control Pins 0.5 to V D + 0.5 V V OUT Output Voltage Pins (OUT1 OUT18) V Lx 0.5 to V Hx + 0.5 V I OUT Continuous Output Current (OUT1 OUT18) One channel is sinking or sourcing current while the remaining seventeen channels are disconnected (I OUT = 0 A) 100 ma I HX DC Supply Current Through V HX 100 ma I LX DC Supply Current Through V LX 100 ma I D DC Supply Current Through V D 50 ma R JA Junction to Ambient Resistance (Note 1) 68 C/W T J Junction Temperature +115 C T STG Storage Temperature 65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 4 layer PCB with 100 sq. mm, 1 oz. heat spreading including traces, JEDEC 51.7 equivalent. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V H1 High side DC Supply Voltage 5 25 V V H2 High side DC Supply Voltage (Note 2) 5 25 V V L1 Low side Negative DC Supply Voltage (Note 3) (V L1 V L2 ) 13 0 V V L2 Low side Negative DC Supply Voltage (Note 4) V L1 0 V V Hx V Lx Differential V H V L Voltage 5 25 V V D Logic Supply Voltage 2 5.5 V V I Input (IN1 IN18), Invert (SEL1 SEL3) and Enable (EN) GND V D V V OUT Output Voltage (OUT1 OUT18) V Lx V Hx V T A Operating Temperature Range 40 +85 C t/ V Input Transition Rise or Rate V I, V IO from 30% to 70% of V D ; V D =3.3 ± 0.3 V 0 10 2. V H1 and V H2 can be connected together. 3. V L1 must be at the lowest DC supply voltage. 4. V L1 and V L2 can be connected together. ns 5

ELECTRICAL CHARACTERISTICS (V Hx =15 V, V Lx = 5 V, V D = 2 to 5.5 V and EN = V D ; unless otherwise specified) Symbol Parameter Parameter Test Conditions POWER SUPPLY I D Digital Supply Static Current Enabled (EN = V D ) Disabled (EN = 0 V), (Power Down) 40 C to +85 C Min Typ Max Unit IN1 to IN18 = 0 V or 2 ma IN1 to IN18 = V D 5 10 A I H1 Block 1 and 2 High Voltage Supply Static Current Enabled (EN = V D ) Disabled (EN = 0 V), (Power Down) IN1 to IN18 = 0 V or 2 ma IN1 to IN18 = V D 5 A I H2 Block 3 High Voltage Supply Static Current Enabled (EN = V D ) Disabled (EN = 0 V), (Power Down) IN1 to IN18 = 0 V or 2 ma IN1 to IN18 = V D 5 A I L1 Block 1 and 2 Low Voltage Supply Static Current Enabled (EN = V D ) Disabled (EN = 0 V), (Power Down) IN1 to IN18 = 0 V or 2 ma IN1 to IN18 = V D 5 A I L2 Block 3 Low Voltage Supply Static Current Enabled (EN = V D ) Disabled (EN = 0 V), (Power Down) IN1 to IN18 = 0 V or 2 ma IN1 to IN18 = V D 5 A V H1 High Side DC Supply 1 5 15 25 V V H2 High Side DC Supply 2 5 17 25 V V L1 Low Side DC Supply 1 V L1 V L2 V L1 must be the lowest voltage in all conditions 13 5 0 V V L2 Low Side DC Supply 2 V L1 5 0 V V Hx V L Differential V Hx V L Voltage 5 25 V INPUT (IN1 IN18, EN, SEL1 SEL3) V IH Logic 1 Input Voltage 0.7 x V D V V IL Logic 0 Input Voltage 0.3 x V D V I IH Logic 1 Input Current V I = V IH 0.1 10 A I IL Logic 0 Input Current V I = V IL 0.1 10 A C IN Input Capacitance T A = 25 C 3.5 pf R IN Input Resistance T A = 25 C 50 M OUTPUT (OUT1 OUT18) V OH V OUT High Voltage INx = 3.3 V, I L = 20 ma V HX 0.2 V V OL V OUT Low Voltage INx = 0 V, I L = 20 ma V LX + 0.12 V R OH ON Resistance, V H to OUTx I L = 20 ma 5 8.5 R OL ON Resistance, V L to OUTx I L = 20 ma 5 7.5 I PEAK Peak Output Current C L = 1000 pf 1100 ma I OZ Output Tri state Mode Leakage Current INx = 3.3 V, V D = 3.3 V, EN = GND 5 A 6

SWITCHING CHARACTERISTICS (C L = 1000 pf, V Hx = 15 V, V Lx = 5 V, V D = 3.3 V and EN = 3.3 V; unless otherwise specified) Symbol Parameter Test Conditions 40 C to +85 C Min Typ Max t R Output Rise Time Measured from 10% to 90% 20 35 ns t F Output Fall Time Measured from 90% to 10% 20 35 ns t RFD Output Rise and Fall Time Mismatch (per channel) Unit 5 ns t SK Output Skew Matching (channel to channel) Measured from 50% to 50% 5 ns t D+ Turn On Propagation Delay Measured from 50% to 50% 55 ns t D Turn Off Propagation Delay Measured from 50% to 50% 55 ns t DD High to Low/Low to High Propagation Delay Mismatch (per channel) Measured from 50% to 50% 5 ns SC# MAX Maximum channels switched in 100 ns sequence Delta between inputs of channels must be 100 ns if channels are switched in sequence 6 Con_OUT Outputs connected together to increase drive capability 3 f MAX Maximum switching Frequency For all V Hx and V Lx voltages 100 khz t EN Enable Time Measured from 50% EN to 50% OUT_xx t DIS Disable Time Measured from 50% EN to 50% OUT_xx_Hi Z 9.8 15 s 2.2 s DATA RATES (C L = 1000 pf, V Hx = 15 V, V Lx = 5 V, V D = 3.3 V and EN = 3.3 V; unless otherwise specified) Channel Conditions Data Rate Unit IN1 IN6 (Note 5) Simultaneous Switching (Turn ON and OFF in sequence, 100 ns between channels) 120 Hz Per Channel 56 khz IN7 IN12 (Note 5) Per Channel 120 Hz IN13 IN 15 (Note 5) Per Channel 120 Hz IN16 IN18 (Note 5) Simultaneous Switching (Turn ON and OFF sequence, 100 ns between channels) 5. While IN1 IN6 are switching, IN1 IN18 are not switching. 120 Hz 7

Power Up Sequence The recommended power up sequence of the power supplies is provided in Figure 3. NLHV18T3244 APPLICATIONS INFORMATION V H2 = 17 V V H1 = 15 V V D V L2 = 0 V 200 ms 20 ms 20 ms V L1 = -5 V Figure 3. Power Up Sequence Power Supply Guidelines Supply voltage V L1 must be less than or equal to voltage V L2. The substrate is connected to V L1 ; thus, V L1 must be the at lowest voltage potential to ensure proper biasing of the internal level shifting circuits. In addition, setting V L1 to the lowest voltage ensures proper operation of the overvoltage and ESD protection circuits connected on the supply voltage and input/output lines, respectively. For optimal performance, 0.1 and 1 F decoupling capacitors are recommended for the V D, V L1, V L2, V H1, and V H2 power supply pins. High frequency ceramic or tantalum capacitors are good design choices to filter and bypass any noise signals on the supply voltage lines to the ground plane of the PCB. The noise immunity will be maximized by placing the capacitors as close as possible to the supply and ground pins, along with minimizing the PCB connection traces. In addition, a ferrite bead can be placed between the two decoupling capacitors to form a bi-directional LC Tee filter if additional noise immunity is required. 8

Recommended PCB Options 2 Layer PCB Traces = 1.4 mm width, tin plating, copper 2 oz Routing of power lines will be in top layer In order to minimize inductance, returning current will be routed as close as possible to the power lines 4 Layer PCB Traces = 1.4 mm width, tin plating, copper 2 oz In order to reduce inductance, construction of layers will be as drawing below Power lines will be routed in top and returning current will be routed in inner1 right below the power lines Figure 4. Recommended 4Layer PCB Options PCB Layout Instructions The power devices should be placed as close as possible to each other in order to reduce inductance Decoupling filter capacitors should be placed as close as possible to the device in order to reduce ripple on supply. The V H, V L and V D decoupling filter capacitors connected between the power supply and GND should be constructed from scaled capacitors. A small value capacitor of 0.1 F, which filters high frequency, should be placed as close as possible to the device. A larger value capacitor of 1 F, which filters low frequency should be placed adjacent to the small capacitor, but farther away from the device. All output line should be far from each other to prevent cross talk All input lines should be matched in length to meet skew timing ORDERING INFORMATION NLHV18T3244MNTWG Device Package Shipping QFN 50 (Pb Free) 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 9

PACKAGE DIMENSIONS QFN50, 5x10, 0.5P CASE 485BW ISSUE O 2X PIN ONE LOCATION 2X 0.15 C 0.15 C 0.10 C 0.08 C NOTE 4 ÉÉÉ DETAIL B D A B TOP VIEW A1 SIDE VIEW (A3) E A C L1 SEATING PLANE L DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS EXPOSED Cu ÉÉ L MOLD CMPD DETAIL B ALTERNATE CONSTRUCTION NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25mm FROM TERMINAL TIP 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A 0.80 1.00 A1 0.00 0.05 A3 0.20 REF b 0.18 0.30 D 5.00 BSC D2 3.20 3.45 E 10.00 BSC E2 8.20 8.45 e 0.50 BSC K 0.20 MIN L 0.30 0.50 L1 0.00 0.15 RECOMMENDED SOLDERING FOOTPRINT* 10.30 8.51 50X 0.63 DETAIL A 0.10 M C A B 17 E2 1 D2 25 0.10 M C A B K e 50X b 0.10 C A B 42 0.05 C NOTE 3 3.51 PKG OUTLINE 0.50 PITCH 50X 0.32 5.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 50 BOTTOM VIEW 50X L ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303 675 2175 or 800 344 3860 Toll Free USA/Canada Fax: 303 675 2176 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81 3 5817 1050 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NLHV18T3244/D