KSA473 PNP Epitaxial Silicon Transistor

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KSA473 PNP Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current : = -3A Collector Dissipation : P C = 10W (T C =25 C) Complement to KSC1173 August 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * T A = 25 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage - 30 V O Collector-Emitter Voltage - 30 V V EBO Emitter-Base Voltage - 5 V Collector Current - 3 A P C Collector Dissipation (T C =25 C) 10 W T J Junction Temperature 150 C T STG Storage Temperature - 55 to + 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. KSA473 Rev. A2 1

Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage = - 500μA, I E = 0-30 V BO Collector-Emitter Breakdown Voltage = - 10mA, = 0-30 V BV EBO Emitter-Base Breakdown Voltage I E = - 1mA, = 0-5 V BO Collector Cut-off Current V CB = - 20V, I E = 0-1.0 μa I EBO Emitter Cut-off Current V EB = - 5V, = 0-1.0 μa h FE1 DC Current Gain = - 2V, = - 0.5A h FE2 = - 2V, = - 2.5A (sat) Collector-Emitter Saturation Voltage = - 2A, = - 0.2A - 0.3-0.8 V V BE (on) Base-Emitter On Voltage = - 2V, = - 0.5A - 0.75-1.0 V f T Current Gain Bandwidth Product = - 2V, = - 0.5A 100 MHz C ob Output Capacitance V CB = - 10V, I E = 0, f = 1MHz 70 25 240 40 pf h FE Classification Classification O Y h FE1 70 ~ 140 120 ~ 240 KSA473 Rev. A2 2

Typical Performance Characteristics -3.2-2.8-2.4-2.0-1.6-1.2-0.8-0.4 = -40mA = -35mA = -30mA = -25mA = -20mA = -15mA = -10mA = -5mA = -3mA -0.0-0 -1-2 -3-4 -5-6 -7-8 -9-10 [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic h FE, DC CURRENT GAIN 1000 100 10 1-0.01-0.1-1 -10 Figure 2. DC current Gain = -2V V BE (sat), (sat)[v], SATURATION VOLTAGE -10-1 -0.1 V BE (sat) (sat) = 10-0.01-0.01-0.1-1 -10-3.6-3.2-2.8-2.4-2.0-1.6-1.2-0.8-0.4-0.0-0.0-0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6-1.8-2.0 V BE [V], BASE-EMITTER VOLTAGE = -2V Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage C ob [pf], CAPACITANCE 1000 100 10 f=1mhz I E =0 1-1 -10-100 -10-1 MAX. (Pulse) MAX. (DC) T C =25 o C *10ms *50ms S/B limitation *1ms Thermal limitation * Single Pulse T C =25 o C -0.1-1 -10-100 V CB [V], COLLECTOR-BASE VOLTAGE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area KSA473 Rev. A2 3

Typical Performance Characteristics P C [W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 T C [ o C], CASE TEMPERATURE Figure 7. Power Derating (Continued) KSA473 Rev. A2 4

Physical Dimensions TO-220 KSA473 Rev. A2 5

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com