NIR PHOTOMULTIPLIER TUBES AND THEIR APPLICATIONS NIR PMTs (near-infrared photomultiplier tubes) are photodetectors that provide high-speed response and high sensitivity in the near infrared region. These are ideal for detecting high-speed phenomena occurring at low light levels such as in measurements of photoluminescence, fluorescence lifetime, Raman spectroscopy, cathode luminescence, and singlet-oxygen emissions. As major NIR PMT products, Hamamatsu offers the R559 series photomultiplier tubes (spectral response range: 3 nm to 14 nm or 3 nm to 17 nm) and the H133 series NIR PMT modules (spectral response range: 95 nm to 12 nm, 95 nm to 14 nm, or 95 nm to 17 nm) that contain a thermoelectric cooler and high-voltage power supply. Either type can be used over a wide measurement range from analog detection mode to photon counting mode. This brochure introduces major applications that utilize the unique features of NIR PMTs. Q. What can we do with near infrared light? 1. Semiconductor quality control and material evaluation Photoluminescence measurement 2. Evaluation of quantum devices and photonic crystals Photoluminescence measurement 3. Evaluation of molecular structures Raman spectroscopy 4. Reactive oxygen study Singlet-oxygen emission measurement 5. Environment measurement Light detection and ranging (LIDAR) THERMOELECTRIC COOLED NIR PMT MODULE H133 SERIES No Liquid Nitrogen, No Cooling Water in Necessary NIR PMT R559 SERIES Wide Spectral Response from Visible to Near Infrared Spectral Response TPMOB2EB 1 2 Spectral Response TPMHB426EF 1 2 at -8 C CATHODE RADIANT SENSITIVITY (ma/w) QUANTUM EFFICIENCY (%) 1 1 1 1-1 1-2 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY H133-25 -45-75 CATHODE RADIANT SENSITIVITY (ma/w) QUANTUM EFFICIENCY (%) 1 1 1 1-1 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY R559-43 R559-73 1-3 8 9 1 11 12 13 14 15 16 17 18 1-2 2 4 6 8 1 12 14 16 18 * C994 series cooler is necessary for operation.
THERMOELECTRIC COOLED NIR PMT MODULE H133-25, -45, -75 OVER VIEW The H133 series is a family of NIR PMT modules using a compact NIR PMT (near-infrared photomultiplier tube) developed by our advanced photocathode technology. The NIR PMT is contained in a thermally insulated sealed-off housing evacuated to a high vacuum. The internal thermoelectric cooler eliminates the need for liquid nitrogen and cooling water. Unlike the former type, no external vacuum pump is required. The size is also reduced to one-third of the cubic volume of the formar type. The light input window of these modules use a condenser lens to provide a virtually larger photosensitive area allowing easy optical coupling for collimated light. Adapters for connection to an optical fiber and monochromator are also available as options. FEATURES Compact and lightweight due to vacuum sealedoff thermal insulation technology High Sensitivity (Capable of Photon Counting) Fast Time Response Rise Time: 9 ps, TTS: 3 ps Simple Operation by Air Cooled TE Cooler No Liquid Nitrogen, No Cooling Water is Necessary Operable in 2 min after Switched ON Large Detection Area 18 mm for Collimated Light HV Power Supply with Interlock Function Optional Adapters are Available For Optical Fiber For Monochromator SELECTION GUIDE / SPECIFICATIONS Type No. Photocathode Material Spectral Response Detection Area for Collimated Light Effective Area of PMT Cathode Sensitivity Quantum Efficiency Gain Anode Pulse Rise Time Time Response Anode Pulse Fall Time Transit Time Spread Main Application OUTPUT VOLTAGE (2 mv/div.) YAG laser (1.6 µm) measurement, Si Photoluminescence, Laser rader (LIDAR) OUTPUT WAVEFORM TPMOB163EB H133-25 H133-45 InP / InGaAsP 95 nm to 12 nm TIME (2 ns/div.) 95 nm to 14 nm 18 mm 1.6 mm 2 % Typ. 1 1 6.9 ns 1.7 ns.3 ns Singlet-oxygen emmision measurement, Si Photoluminescence SUPPLY VOLTAGE: -8 V RISE TIME :.85 ns FALL TIME : 1.65 ns PULSE WIDTH : 1.63 ns WAVELENGTH : 13 nm LOAD RESISTOR : 5 Ω H133-75 InP / InGaAs 95 nm to 17nm Optical communication device evaluation, Laser rader (LIDAR)
NIR PMT MODULE CONTRPLLER TEMPERATURE / DARK CURRENT vs. COOLING TIME (H133-45) 3 TPMOB162EB 7 SYSTEM CONFIGURATION (CONNECTION DIAGRAM) NIR-PMT MODULE INDICATED TEMPERATURE ( C) 15-15 -3-45 -6 DARK CURRENT INDICATED TEMPERATURE 6 5 4 3 2 1 ANODE DARK CURRENT (na) NIR PMT MODULE RESISTOR BOX WITH BNC CONNECTORS (1 kω) HIGH VOLTAGE CABLE (2.5 m) CONTROL CABLE (2.5 m) NIR-PMT MODULE CONTROLLER ERROR STANDBY POWER READY OUTPUT VOLTAGE OUTPUT ADJ. NIR PMT MODULE CONTROLLER [ V ] -75 5 1 15 2 25 TPMOC199EA COOLING TIME (min) DIMENSIONAL OUTLINE (Unit: mm) NIR PMT Module FAN EXHAUST VENT* * Do not block the air intake vents and fan exhaust vent. Otherwise, heat builds up in the unit causing poor performance or failure. 88 AIR INTAKE VENTS* 163 23 12 6 NIR PMT MODULE 7 1 M3 P=.5 48 INPUT WINDOW EFFECTIVE AREA 18 15.5 4 12 15 BNC- RECEPTACLE SHV- RECEPTACLE SIGNAL INPUT CONTROLLER 1 PIN CONNECTOR TPMOA4EB NIR PMT Module Controller 12 26 279.5 2 SHV- RECEPTACLE FAN EXHAUST VENT VOLTAGE ERROR OUTPUT STANDBY READY OUTPUT [ V ] AC INPUT 13 POWER CONTROLLER AC INPUT OUTPUT ADJ. 12 7 15.5 248 AIR INTAKE VENTS 1 PIN CONNECTOR TPMOA41EB
(near-infrared: 1.4 µm / 1.7 µm) NIR PMTs (near-infrared photomultiplier tubes) R559-43, -73 OVER VIEW Hamamatsu near infrared photomultiplier tubes (NIR PMT) R559-43 and -73 have photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photocathodes. The R559-43 is recommended for detection up to 1.35 µm, while the R559-73 is up to 1.7 µm. For operation, exclusive cooler C994 series is necessary. FEATURES High sensitivity enables accurate PL (Photoluminescence) measurement with a low excitation power that could not be obtained with a strong excitation. High gain and low noise improve the detection limit. Flat response from visible to near IR minimizes spectral sensitivity correction. The spectral response covers a wide range from.3 µm to 1.4 µm or 1.7 µm. Photoluminescence from a sample can be measured.* High sensitivity enables weak light emission measurement. Time resolved measurement in near IR is realized. Fast time response (Rise time): 3 ns. * Detection limit depends on the material and measurement condition. OUTPUT VOLTAGE [1 mv/div] OUTPUT WAVEFORM (R559-43) TPMHB46EB SUPPLY VOLTAGE : -15 V RISE TIME : 2.6 ns FALL TIME : 6.36 ns PULSE WIDTH : 3.58 ns WAVELENGTH : 13 nm AMBIENT TEMPERATURE : -8 C TIME [5 ns/div] SPECIFICATIONS Type Spectral Response Photocathode Material Minimum Effective Area Recommended Operating Temperature Cathode Sensitivity Quantum Efficiency Gain Anode Pulse Rise Time Time Response Anode Pulse Fall Time Transit Time Spread R559-43 3 nm to 14 nm InP / InGaAsP R559-73 3 nm to 17 nm InP / InGaAs 3 mm 8 mm -8 C 2 % Typ. (at 13 nm: R559-43, at 15 nm: R559-73) 1 1 6 3 ns 23 ns 1.5 ns
8 DIMENSIONAL OUTLINE (Unit: mm) 51 ± 1 3 APERTURE Top View 33 ± 2 PIN No.3 PIN No.1 PHOTOCATHODE (3 8) 9 ± 2.5 2 PIN No.14 HA COATING PHOTOCATHODE LIGHT SHIELD 15 88 ± 2 14 MAX. Bottom View IC IC IC DY9 1 11 12 DY7 IC 9 1314 DY5 8 P DY3 7 15 DY1 6 16 DY1 DY8 5 17 IC 4 18 DY6 B 3 19 DY4 2 2 IC 1 21 DY2 IC K IC SHORT PIN DY K P B IC : Dynode : Photocathode : Anode : Bias Electrode : Internal Connection (Do not use) TPMHA283EC TPMHA284ED RELATED PRODUCTS Exclusive coolers C994-1, -2 The C994-1, -2 are exclusive coolers for R559 series photomultiplier tubes. To operate the R559 series, it is necessary to cool it down to -7 C to -9 C range (recommended : -8 C). Cooling suppresses dark current and improves signal to noise ratio to make weak near infrared light measurements possible with high sensitivity. Two types are available with different line voltage regulations, 1 V to 115 V (C994-1) and 23 V (C994-2). FEATURES Temperature range: -7 C to -9 C Voltage divider, Magnetic shield case included Alarm with output when liquid nitrogen is running out No external dry nitrogen is required SYSTEM CONFIGURATION PMT COOLER HOUSING PMT SOCKET ASSEMBLY PMT CONTROLL CABLE 1 kω LOAD REGISTER BOX AC POWER CABLE COOLER VINYL TUBE COOLER CONTROLLER POWER SWITCH TEMPERATURE CONTROLLER HEAT INSULATING HOSE LIQUID NITROGEN SUCTION PIPE LIQUID NITROGEN CONTAINER (NOT INCLUDED) TACCC123EB OTHER ACCESSORIES REQUIRED Liquid nitrogen container From 1 L to 25 L capacity The opening of the container should allow the 15 mm diameter liquid nitrogen suction pipe to be inserted. High voltage power supply Capable to provide stable output of -15 V,.2 ma Recommended : C484 High voltage cable with an SHV-P connector Recommended : E1168-17 Signal COAX cable with a BNC-P connector Recommended : E1168-5
APPLICATION EXAMPLES Photoluminescence measurement InAlAs/InGaAs single quantum wells Photoluminescence spectra emitted from a sample with different InGaAs well widths. This data proves that intensity distribution of the spectrum corresponding to each quantum well varies with the excitation light power. 77K structure: InAlAs/InGaAs (SQWs)/InP(sub) InGaAs 5 Å InAlAs 3 Å InGaAs 3 Å InAlAs 3 Å InGaAs 6 Å InAlAs 3 Å 3 Å 6 Å 1 Å InGaAs InAlAs 1 Å 3 Å Fe doped InP (1) sub. : SHG Nd: YAG (532 nm) SLIT:.2 mm.2 mm : 77K POWER: 8 µw POWER:.5 mw POWER:.6 mw Detector: NIR PMT R559-73 11 12 13 14 15 16 17 TPMHB627EB Undoped SI-InP Emission from deep levels in a semi-insulating InP substrate at was clearly observed. X1 : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : X1 POWER:.6 mw X1 X1 Data shows that intensity distribution of the photoluminescence spectrum changes with excitation light power. Using a "low power excitation light" allows highprecision measurement not subject to variations in excitation light intensity. It is therefore essential to use "low power excitation light" in order to measure emission from deep levels and total band-to-band transition. Detector: NIR PMT R559-73 77K 7 8 9 1 11 12 8 9 1 11 12 13 14 15 16 17 : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : 77K POWER:.5 mw POWER:.6 mw 13 14 15 16 TPMHB621EA TPMHB622EA
APPLICATION NOTE Photoluminescence measurement Undoped SI-GaAs Emission from deep levels in a semi-insulating GaAs substrate at s was clearly observed. : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : POWER:.6 mw 7 8 9 1 11 12 13 14 15 16 17 TPMHB619EA 77K : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : 77K POWER: 2 nw Detector: NIR PMT R559-73 7 8 9 1 11 12 13 14 15 16 17 TPMHB62EA InAs/InGaAs quantum dots structure Figure shows PL spectrum at the from InAs quantum dots covered with InGaAs layer. Size and uniformity of quantum dots can be estimated from the peak wavelength and the FWHM of PL spectrum. However, when excitation power is increased, luminescence of shorter wavelength (12 nm) becomes strong, and the estimate of exact peak wavelength and the FWHM becomes impossible. Therefore, it is important that excitation power must be kept as weak as possible for precise measurement. For this reason, a high sensitivity detector is required. Basic Structure 15 11 115 12 125 13 135 14 145 InGaAs InGaAs GaAs buffer 15 nm 5 nm 3 nm : SHG Nd: YAG (532 nm) SLIT:.2 mm /.2 mm : 3 K InAs dots EXCITATION LIGHT 3 mw 3 mw.3 mw.3 mw 3 µw TPMHB664EA GaAs (1) substrate Detector: NIR PMT R559-43
APPLICATION EXAMPLES Photoluminescence measurement B-Dope Si (111) low resistivity wafer ρ >.2 kωcm Silicon, the indirect bandgap semiconductor, has lower photoluminescence emission compared with direct bandgap semiconductors such as GaAs, InP, etc. However, the NIR-PMT has made it possible to observe a clear photoluminescence spectra from a silicon wafer even at low power excitation lights. 77K : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : 9 1 11 12 POWER:.5 mw POWER:.6 mw 13 14 : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : 77K TPMHB623EA Detector: NIR PMT R559-43 9 1 11 12 13 14 TPMHB624EA Basic Structure InGaAsP/InP p - InP.2 µm 2 116 cm-3 p + InP 2 µm p + InP SUB 35 µm p - InGaAsP 2 µm TPMHC187EB An epitaxial wafer at the can be evaluated. Photoluminescence measurement in 77 K sample is possible at low power excitation lights from a few to tens of micro-watts. 77K 11 12 13 14 : SHG Nd: YAG (532 nm) SLIT:.5 mm.5 mm : POWER:.6 mw 15 16 17 : SHG Nd: YAG (532 nm) SLIT:.2 mm.2 mm : 77K POWER: 8 µw POWER:.5 mw POWER:.6 mw TPMHB617EA Detector: NIR PMT R559-43 11 12 13 14 15 16 17 TPMHB618EA
Photoluminescence measurement β-fesi2 The NIR PMT measures the photoluminescence of β-fesi2 currently being studied for use as an environmentally-friendly semiconductor material. This β-fesi2 sample is a silicide thin film grown by Fe-irradiation onto a silicon (111) substrate kept at a high. As can be seen from the graph on the right, the photoluminescence intensity at a sample of 77 K is at least 3 times higher than at 3 K. The peak wavelength of the 77 K sample occurs at 1562 nm while that of the 3 K sample shifts slightly to 1585 nm. (The longer wavelength side is limited by the photomultiplier tube sensitivity.) Detector: NIR PMT R559-73 INTENSITY (mv) 6 5 4 3 2 APPLICATION NOTE : SHG Nd: YAG (532 nm).2 mj, 1 ns, 2 Hz SAMPLE TEMPERATURE: 77 K 1 1 : 3 K (ROOM TEMPERATURE) 13 14 15 16 17 TPMHB783EA Cathodeluminescence (CL) measurement InAs/InP The data on the right show images of cathodoluminescence (CL) emitted from InAs islands in an InAs/InP multiple quantum well structure, observed with a scanning electron microscope (SEM) to which a light collection system and a monochromator were installed. The right-hand CL images were taken with the SEM using a Ge PIN photodiode. These images are not clear due to external noise such as cosmic rays. In contrast, the lefthand data taken with an R559-43 photomultiplier tube shows clear, sharp CL images with a high S/N ratio. The R559-43 allows high-sensitivity CL measurements in the near infrared region, which are expected to prove useful in optical evaluations of samples, analysis of inorganic or organic substances, and other near infrared spectroscopy. Cathodoluminescence (CL) Measurement When a sample is irradiated by high-velocity electron beams, electron-hole pairs in the sample are excited and then recombine while producing a characteristic luminescence known as cathodoluminescence (CL). Information on the internal electron structures of the sample can be studied by measuring this luminescence. Condition Electron Probe Accelerating Voltage Current Detector: NIR PMT R559-43 5 kv 1 na 1K R559-43 Ge PIN-PD 77 K 99 nm 99 nm 11 nm 12 nm 13 nm 14 nm Photos: By courtesy of Prof. Y. Takeda, Dept. of Materials Science and Engineering, Graduate School of Engineering, Nagoya University; Prof. A. Nakamura, Center for Integrated Research in Science and Engineering, Nagoya University
APPLICATION EXAMPLES Fluorescence lifetime measurement InAs Quantum Dots Data shown here is photoluminescence lifetime from InAs quantum dots grown on an InGaAs substrate, measured with time-correlated single photon counting (TCSPC) technique. INTENSITY 1 4 1 3 1 2 EXCITATION: YAG (164 nm), WIDTH: 1.15 ns WAVELENGTH: 1274 nm Decay & Fitting τ1 = 225 ps, τ2 = 1.4 ns Basic Structure 1 1 Instrument Response InAs QDs InGaAs 15 nm InGaAs 5 nm GaAs buffer 3 nm 1 2.5 5. 7.5 1. TIME (ns) TPMHB784EA GaAs (1) substrate Detector: Detector equivalent to the H133-45 NIR PMT module System: Near-infrared lifetime measurement system C799 series Fluorescence lifetime measurement InGaAsP NIR PMTs allow making fluorescence lifetime measurements in the near infrared region. Up till now this has been difficult to measure with conventional detectors. This measurement shows the fluorescence lifetime of a compound semiconductor (at ). COUNT 1 3 1 2 IR3 (Decay+IRF4k) InP (.4 µm), GaInAs InP (.4 µm), GaInAs InP (.4 µm), GaInAs Fit Results τ1 43.79 ns χ2 1.266 1 2 3 4 5 6 7 8 9 RESIDUALS 5.7. -5.7 TIME (ns) TPMHB785EA Detector: Detector equivalent to the H133-75 NIR PMT module System: Near-infrared life time measurement system C799 series EXCITATION: Nd: YAG (164 nm) FLUORECENT WAVELENGTH: 1347 nm : 3 K τ=43.79 ns was obtained after deconvolusion by the software.
APPLICATION NOTE Measurement of Raman spectroscopy Rhodamine B in Ethanol Solution (2 µmol/l) Raman spectroscopy is effective in studying the structure of molecules in a solution. In particular, near infrared Raman spectroscopy enables measurement of samples which were previously impossible with conventional methods using visible light excitation because of the influence of fluorescence. In this application, clear Raman spectra of solute rhodamine B (marked by ) are measured, as well as a Raman spectrum of ethanol solution. This data was obtained with weak excitation light averaging 1 mw output using pulsed excitation light and gate detection method under fluorescent lighting conditions. INTENSITY : LD-PUMPED ND: YAG (164 nm) 1 mw, 1 ns pulse, 1 khz : 77 K RHODAMINE B POWDER SAMPLE ETHANOL 16 14 12 1 8 RAMAN SHIFT (cm -1 ) TPMHB452EB Detector: Detector equivalent to the H133-45 NIR PMT module Measurement of singlet oxygen Singlet oxygen Rose Bengal in pure water Using the R559-43 and a pulsed laser, singlet oxygen emission with a peak at 127 nm were efficiently detected by signal processing with a gated pulse counter, reducing effects of fluorescence. (Data obtained by CW YAG laser excitation is also shown in the same graph for comparison.) The graph on the right shows detection limits evaluated by changing the concentration of the photosensitizer Rose Bengal. This proves that emissions from singlet oxygen of low concentration, even only 1 nmol/l, can be detected. SIGNAL OUTPUT (COUNTS) 2 1.8 1.6 1.4 1.2 1.8.6.4.2 1 5 1 4 1 3 1 2 115 GATED PHOTON COUNTING METHOD : PULSE SHG Nd: YAG (532 nm) 12 mj, PULSE WIDTH: 1 ns, 2 Hz SLIT: 2 mm / 2 mm GATED DELAY TIME: 1.5 µs GATE TIME: 5 µs CW GATED PHOTON COUNTING METHOD 12 125 13 135 : PULSE SHG Nd: YAG (532 nm) 12 mj, PULSE WIDTH: 1 ns, 2 Hz SLIT: 2 mm / 2 mm CONCENTRATION OF ROSE BENGAL 1 µmol/l 1 µmol/l 1 nmol/l TPMHB665EA 1 1 11 115 12 125 13 135 14 145 Detector: NIR PMT R559-43 TPMHB666EA
APPLICATION EXAMPLES Measurement of singlet oxygen Singlet oxygen Rose Bengal in acetone, methanol and water Lifetime characteristics and emission spectrum of the singlet oxygen when the photosensitizer Rose Bengal was dissolved in acetone, methanol and water were measured. Singlet oxygen lifetime can be measured with high accuracy, by using gated photon counting techniques that utilize high-speed response of a near infrared PMT and allow continuous scan of signal pulses obtained in a short gate time (sampling time). In solvents which singlet oxygen has a long life, there is little singlet oxygen that thermally disappears so more singlet oxygen disappears during the emission process. This results in an increase in the entire emission level. Detector: NIR PMT R559-43 INTEGRATED COUNTS (5 SHOT) INTEGRATED COUNTS (1 SHOT) 1 4 1 3 1 2 1 1 1 1.4 1 4 1.2 1 4 1. 1 4.8 1 4.6 1 4.4 1 4.2 1 4 12 : PULSE SHG Nd: YAG (532 nm) 2.5 mj, PULSE WIDTH: 1 ns, 2 Hz SLIT: 2 mm / 2 mm GATE (sampling) TIME: 1 µs τ=3.7 µs in H2O (WATER) τ=62 µs in CH3COCH3 (ACETONE) τ=11 µs in CH3OH (METHANOL) 1 2 3 4 5 6 7 8 9 1 TIME (µs) : PULSE SHG Nd: YAG (532 nm) 2.5 mj, PULSE WIDTH: 1 ns, 2 Hz SLIT: 2 mm / 2 mm GATED DELAY TIME: 3 µs GATE TIME: 5 µs CH3COCH3 CH3OH H2O 122 124 126 128 13 132 134 TPMHB667EA TPMHB668EA 5-ALA (Photosensitizer) In photodynamic therapy (PDT), singlet oxygen plays an important role in killing tumor cells. Changes in the amount of generated singlet oxygen can be observed at the cellular level. This implies that monitoring the singlet oxygen is the key to setting optimal PDT laser irradiation conditions. Accurate measurements can be made since NIR PMT modules can directly capture weak singlet-oxygen emissions (127 nm) from cells. Temporal change of 1 O2 production EXCITATION: 8 mw/cm 2 EXCITATION: 16 mw/cm2 EXCITATION: 24 mw/cm2 3 3 3 PHOTON COUNTS Cumulative 1 O2 counts during PDT at each fluence rate CUMULATIVE 1 O2 COUNTS 25 2 15 1 5 1 18 16 14 12 1 8 6 4 with 5-ALA without 5-ALA 2 TIME (s) Experimental conditions 2 8 mw/cm2 Photosensitizer: 5-ALA Cancer cells: Rat brain tumor cells 9L Excitation light: 635 nm Detector: Detector equivalent to the H133-45 NIR PMT module 3 4 16 mw/cm2 24 mw/cm2 PHOTON COUNTS 25 2 15 1 5 1 with 5-ALA without 5-ALA 2 TIME (s) Proportion of cell death after PDT at each fluence rate CELL VIABILITY (%) 1 8 6 4 2 3 4 8 mw/cm2 PHOTON COUNTS 25 2 15 1 5 1 16 mw/cm2 24 mw/cm2 with 5-ALA without 5-ALA 2 TIME (s) 3 4 TPMHB786EA Data courtesy of: Junkoh Yamamoto, Department of Neurosurgery, University of Occupational and Environmental Health, Japan Toru Hirano, Photon Medical Research Center, Hamamatsu University School of Medicine, Japan Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 28 Hamamatsu Photonics K.K. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-225 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, P. O. Box 691, Bridgewater. N.J. 887-91, U.S.A., Telephone: (1)98-231-96, Fax: (1)98-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 1, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71, Fax: (33)1 69 53 71 1 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 1 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-()177-294888, Fax: 44()177-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-59-31-, Fax: (46)8-59-31-1 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 22 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 E-mail: info@hamamatsu.it TPMO14E1 JUL. 28 IP (15)