UNIVERSITI SAINS MALAYSIA. Peperiksaan Semester Kedua Sidang Akademik 1997/98. Februari EEE Peranti Semikonduktor Lanjutan.

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UNIVERSITI SAINS MALAYSIA Peperiksaan Semester Kedua Sidang Akademik 1997/98 Februari 1998 EEE 470 - Peranti Semikonduktor Lanjutan Masa [3 jam] ARAHAN KEPADACALON: Sila pastikan bahawa kertas peperiksaan ini mengandungi TUJUH (7) muka surat bercetak dan ENAM (6) so alan sebelum anda memulakan peperiksaan ini. Jawab LIMA (5) soalan. Agihan markah bagi soalan diberikan di sut sebelah kanan soalan berkenaan. Semua soalan hendaklah dijawab di dalam Bahasa Malaysia. Jika pelajar memilih menjawab di dalam Bahasa Inggeris sekurang-kurangnya satu soalan mesti dijawab di dalam Bahasa Malaysia.... 2/- 402

- 2 - [EEE 470] 1. V DD = +2.5V Vss = -2.5V Rajah 1 Figure 1 Rajah 1 ialah satu litar rujukan voltan terpincang diri terujuk VT dengan peranti-peranti terkaskod. Bangunkan satu struktur serupa bagi pembikinan dalam proses CMOS telaga N dengan pilihan topen~ tapak P. Reka saiz perintang dan peranti bagi satu arus pincang DC (lout) 100J.lA. Figure 1 is a Vr-referenced self-biased Voltage Reference circuit with cascoded devices. Develop a similar structure for fabrication in a N-well CMOS process with a P-base mask option. Design device and Resistor sizes for a DC bias current (lout) of 100J,LA. (16%) Nyatakan kebaikan dan keburukan penggunaan peranti cermin terkaskod. Mention the tradeoff in using cascoded mirror devices. \ I~ ~,~ _.'... :tr' 403... 3/-

- 3 - [EEE 470] 2. +5V M12 V OU1 Rajah 2 Figure 2 Rajah 2 ialah satu pehguat kendalian tak terpampas dengan masukan-masukan kebezaan dan keluaran pengikut punca hujung tunggal. Reka saiz peranti bagi satu titik operasi DC dengan gandaan DC 2000 dan buai isyarat keluaran sekurang-kurangnya 3 volt. Lesapan kuasa adalah terhad sekitar 6mW. Figure 2 is an uncompensated opamp with differential inputs and single-ended source follower output. Design device sizes for a DC operating point with a DC gain of 2000 and output signal swing of at least 3 volts. Power dissipation should be limited to around 6mW. (20%)... 4/- 404

- 4 - [EEE 470] 3. Rajah 3 Figure 3 Rajah 3 ialah skematik bagi satu pengamir kapasitor tersuis. Beri penerangan dengan menggunakan gambarajah-gambarajah pemasaan, operasi peranti tersebut. Figure 3 is the schematic of a switched capacitor integrator. Explain with timing diagrams the operation of the above device. (8%). Tentukan persamaan bagi sambutan frekuensi, v" (jro). Vj Obtain an expression for the frequency response, v" (jro). Vi (8%) 405... 5/-

- 5 - [EEE 470] (c) Nyatakan perbezaan-perbezaan dalam objektif perlakuan satu penguat kendalian yang digunakan dalam pemprosesan isyarat analog dibandingkan dengan yang digunakan sebagai satu peranti analog tersendiri. Mention the differences in performance objectives for an opamp to be used in Analog signal processing compared to that used as a stand-alone analog device. 4. Terangkan asalan had kadar-slu dan terangkan kaedah memperbaiki kadarslu. Explain the "origin of slew-rate limitations and mention methods of improving slewrate. (5%)... 6/- 40G

- 6 - [EEE 470] V,o-- 1---"i Mll --i M'5 I I, * I, M'6 Rajah 4 Figure 4 -Vss Terangkan operasi peringkat masukan penguat kendalian 'class ~B' Dalam Rajah 4 bagi peningkatan kadar-slu. Explain the operation of the 'class AB' opamp input stage in Figure 4 for slew-rate enhancement. (15%) 407... 7/-

- 7 - [EEE 470] 5. Tulis nota ringkas tentang yang berikut. Write short notes on the following. Pampasan bagi suapbalik gandaan uniti. Compensation for unity gain feedback. Rujukan voltan sela jalur. Bandgap voltage reference. (c) Peri~gkat-peringkat keluaran CMOS. CMOS output stages. (d) Pampasan kutub-sifar dalam penguat kendalian berbilang tahap. Pole-zero compensation in multi-stage opamps. (e) Penukar arus ke voltan. Current-to-voltage converter. 6. Terangkan langkah-iangkah pembikinan bagi peranti HEMT pseudomorphic berdasarkan super-kekisi Si-Ge. Explain the fabrication steps for a Si-Ge super-lattice based pseudomorphic HEMT device. (10%) Bangunkan model talian penghantaran HEMT bagi analisa frekuensi gelombang mikro. Develop the transmission-line model for HEMT for micro-wave frequency analysis. (10%) 0000000,... oil. 408